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October 2013
FQB34N20 — N-Channel QFET® MOSFET
www.fairchildsemi.com
1
Thermal Characteristics
Symbol Parameter Unit
RJC Thermal Resistance, Junction to Case, Max. 0.7
oC/W
RJA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max. 40
FQB34N20
N-Channel QFET® MOSFET
200 V, 31 A, 75 mΩ
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•31 A, 200 V, RDS(on) = 75 mΩ (Max.) @ VGS = 10 V,
ID = 15.5 A
• Low Gate Charge (Typ. 60 nC)
•Low Crss (Typ. 55 pF)
• 100% Avalanche Tested
• RoHS Compliant
FQB34N20TM_AM002
+ + )** +
6 '( %
2-)/74
2-(**74 )* %
6 8 ()9 %
+ :+ ±'* +
; 8%!; 39* <
6 %! '( %
; ,!%!; (= <
!$ 8>,!!$ / / +$
882-)/74? ' (' @
82-)/74 (=* @
"!)/7 ( 9' @$7
, //A(/* 7
B
($=/ '** 7
Features
Description
FQB34N20TM_AM002
GS
D
D2-PAK
G
S
D
©2003 Fairchild Semiconductor Corporation
FQB34N20 Rev. C1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQB34N20 FQB34N20TM_AM002 D2-PAK 330mm 24mm 800
+-(3*+6-'9%
+-(*+
!"
C+ C>+ +-*+6-)/*µ%)** +
∆C+
$∆
C>+
6-)/*µ%,)/7 * ) +$7
6 D:+ +-)**++-*+ ( µ%
+-(3*+-()/7 (* µ%
6 :C1> +-'*++-*+ (** %
6 :C1>,! +-'*++-*+ (** %
+ :+ +-+6-)/*µ%' * / * +
,
, +-(*+6-(/ /% * *3 * *./ Ω
+-9*+6-(/ /% )/
6 +-)/++-*+
-( *E#
)9** '(**
9'* /3*
,! // .*
+-(**+6-'9%
,-)/Ω
9* F*
, )=* /.*
()/ )3*
((/ )9*
G: 3* .=
G : (.
G : ).
6B '( %
6 B8 ()9 %
+ + +-*+6-'(% ( / +
,!,! +-*+6-'9%
6$-(**%$µ
(/*
G ,!,! * F/ µ
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.0mH, IAS = 31A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 34A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
FQB34N20 — N-Channel QFET® MOSFET
www.fairchildsemi.com
2
©2003 Fairchild Semiconductor Corporation
FQB34N20 Rev. C1
!"#$
Ω
!
"
#$
%#&'
Typical Characteristics
FQB34N20 — N-Channel QFET® MOSFET
www.fairchildsemi.com
3
©2003 Fairchild Semiconductor Corporation
FQB34N20 Rev. C1
ZJC(t), Thermal Response [oC/W]
% &' " ( )
* +, (- .* &
/ 0 1 %
µ
!"#$%#
23
" #$
%
!
!
()*$$"&+ ',)*$$
#$
-.!
#$
/
#$
''##$
"
FQB34N20 — N-Channel QFET® MOSFET
www.fairchildsemi.com
4
©2003 Fairchild Semiconductor Corporation
FQB34N20 Rev. C1
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
FQB34N20 — N-Channel QFET® MOSFET
www.fairchildsemi.com
5
©2003 Fairchild Semiconductor Corporation
FQB34N20 Rev. C1
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQB34N20 — N-Channel QFET® MOSFET
www.fairchildsemi.com
6
©2003 Fairchild Semiconductor Corporation
FQB34N20 Rev. C1
Mechanical Dimensions
Dimension in Millimeters
TO-263 2L (D2PAK)
Figure 16. 2LD,TO263, Surface Mount
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FQB34N20 — N-Channel QFET® MOSFET
©2003 Fairchild Semiconductor Corporation
FQB34N20 Rev. C1
www.fairchildsemi.com
7
©2003 Fairchild Semiconductor Corporation
FQB34N20 Rev. C1
www.fairchildsemi.com
8
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AccuPower™
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Rev. I66
tm
®
FQB34N20 — N-Channel QFET® MOSFET
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