VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 27-Sep-17 1Document Number: 94392
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Phase Control Thyristors
(Stud Version), 80 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-94 (TO-209AC)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 80 A
VDRM/VRRM 400 V, 800 V, 1200 V
VTM 1.60 V
IGT 120 mA
TJ-40 °C to +125 °C
Package TO-94 (TO-209AC)
Circuit configuration Single SCR
TO-94 (TO-209AC)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
80 A
TC85 °C
IT(RMS) 125
A
ITSM
50 Hz 1900
60 Hz 1990
I2t50 Hz 18 kA2s
60 Hz 16
VDRM/VRRM 400 to 1200 V
tqTypical 110 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = 125 °C
mA
VS-80RIA
VS-81RIA
40 400 500
1580 800 900
120 1200 1300
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
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Revision: 27-Sep-17 2Document Number: 94392
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 80 A
85 °C
Maximum RMS on-state current IT(RMS) DC at 75 °C case temperature 125
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
1900
t = 8.3 ms 1990
t = 10 ms 100 % VRRM
reapplied
1600
t = 8.3 ms 1675
Maximum I2t for fusing I2t
t = 10 ms No voltage 18
kA2s
t = 8.3 ms 16
t = 10 ms 100 % VRRM
reapplied
12.7
t = 8.3 ms 11.7
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 180.5 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.99 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.13
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 2.29 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.84
Maximum on-state voltage VTM Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 200 mA
Typical latching current IL400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt
TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber
0.2 μF, 15 , gate pulse: 20 V, 65 , tp = 6 μs, tr = 0.5 μs
Per JEDEC standard RS-397, 5.2.2.6.
300 A/μs
Typical delay time tdGate pulse: 10 V, 15 source, tp = 6 μs, tr = 0.1 μs,
Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C 1
μs
Typical turn-off time tqITM = 50 A, TJ = TJ maximum, dI/dt = -5 A/μs, VR = 50 V,
dV/dt = 20 V/μs, gate bias: 0 V 25 , tp = 500 μs 110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = 125 °C exponential to 67 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = 125 °C rated VDRM/VRRM applied 15 mA
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
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Revision: 27-Sep-17 3Document Number: 94392
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 12 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 3
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
3A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 10
Maximum DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
270
mATJ = 25 °C 120
TJ = 125 °C 60
Maximum DC gate voltage required to trigger VGT
TJ = - 40 °C 3.5
VTJ = 25 °C 2.5
TJ = 125 °C 1.5
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
VDRM anode to cathode applied
6mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to case RthJC DC operation 0.30
K/W
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1
Mounting torque, ± 10 %
Non-lubricated threads 15.5
(137) N · m
(lbf · in)
Lubricated threads 14
(120)
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-94 (TO-209AC)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.042 0.030
TJ = TJ maximum K/W
120° 0.050 0.052
90° 0.064 0.070
60° 0.095 0.100
30° 0.164 0.165
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 27-Sep-17 4Document Number: 94392
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
80
90
100
110
120
130
0 102030405060708090
Maximum Allowable Case Temperature (°C)
30° 60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
80RIA Series
R (DC) = 0.30 K/W
thJC
70
80
90
100
110
120
130
020406080100120140
DC
30° 60°
90°
120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
80RIA Se ries
R (DC) = 0.30 K/W
thJC
0255075100125
Maximum Allowable Ambient Temperature (°C)
0.6K
/W
1K
/W
2K
/W
5K
/W
3K
/W
1.4K
/W
R=0.4K
/W-DeltaR
thS
A
0
10
20
30
40
50
60
70
80
90
100
110
120
0
10 20 30 40 50 60 70 80
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
Maximum Average On-st ate Pow er Loss (W)
Average On-state Current (A)
80RIA Series
T = 125°C
J
0255075100125
Maximum Allowable Ambient Temperature (°C)
R=0.4K
/W-DeltaR
thS
A
0.6K/W
1K
/W
1.4K
/W
2K
/W
3K
/W
5K
/W
0
20
40
60
80
100
120
140
160
180
0 20406080100120140
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
80RIA Serie s
T = 125°C
J
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 27-Sep-17 5Document Number: 94392
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
800
1000
1200
1400
1600
1800
110100
Number Of Eq ua l Amplitude Half Cyc le Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
80RIA Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial TJ = 125°C
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.01 0.1 1
Pulse Tra in Dura t io n ( s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
80RIA Se ries
Maximum Non Repetitive Surge Current
1
10
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T = 25°C
J
Instantaneous On-state Current (A)
In st a n t a n e o u s O n - st a t e V o lt a g e ( V )
T = 125°C
J
80RIA Series
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Sq uare Wave Pulse Duration (s)
thJC
80RIA Series
Steady State Value
R = 0.30 K/W
(DC Operation)
Transient Thermal Impedance Z (K/W)
thJC
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
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Revision: 27-Sep-17 6Document Number: 94392
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95362
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Frequency Limited by PG(AV)
tr<=1 µs
rated di/dt : 20V, 30ohms; tr<=0.5 µs
<=30% rated di/dt : 20V, 65ohms
(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms
Device: 80RIA Series
(4)
-I
TAV x 10 A
3
- RIA = essential part number4
6
7
- Voltage code x 100 = VRRM (see Voltage Ratings table)
5
-None = stud base 1/2"-20UNF- 2 A threads
M = stud base metric threads M12 x 1.75 E 6
2
-0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
2 = ag terminals (gate and auxiliary cathode terminals)
Device code
51 32 4 6 7
8 0 RIA 120 M PbFVS-
1-Vishay Semiconductors product
- None = standard production
- PbF = lead (Pb)-free
Document Number: 95362 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 17-Sep-10 1
TO-209AC (TO-94) for 80RIA Series
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Fast-on terminals
C.S. 0.4 mm2
White shrink
Red shrink
Red cathode
Red silicon rubber
Ø 4.3 (0.17)
10.0 (0.39) MAX.
(0.0006 s.i.)
Glass metal seal
Ø 8.5 (0.33)
16.5 (0.65) MAX.
Ø 23.5 (0.92) MAX.
C.S. 16 mm2
(0.025 s.i.)
Flexible lead
2.5 (0.10) MAX.
29.5 (1.16) MAX.
1/2"-20UNF-2A
SW 27
9.5 (0.37) MIN.
White gate
AMP. 280000-1
REF-250
20 (0.79) MIN.
24 (0.94)
MAX.
21 (0.83)
MAX.
157 (6.18)
170 (6.69)
55 (2.17)
MIN.
215 ± 10
(8.46 ± 0.39)
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Revision: 08-Feb-17 1Document Number: 91000
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