VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 80 A FEATURES * Hermetic glass-metal seal * International standard case TO-94 (TO-209AC) * Designed and qualified for industrial level * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-94 (TO-209AC) TYPICAL APPLICATIONS * DC motor controls * Controlled DC power supplies PRIMARY CHARACTERISTICS * AC controllers IT(AV) 80 A VDRM/VRRM 400 V, 800 V, 1200 V VTM 1.60 V IGT 120 mA TJ -40 C to +125 C Package TO-94 (TO-209AC) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 80 A 85 C 125 ITSM I2t 50 Hz 1900 60 Hz 1990 50 Hz 18 60 Hz 16 VDRM/VRRM tq Typical TJ A kA2s 400 to 1200 V 110 s -40 to +125 C IDRM/IRRM MAXIMUM AT TJ = 125 C mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-80RIA VS-81RIA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 40 400 500 80 800 900 120 1200 1300 15 Revision: 27-Sep-17 Document Number: 94392 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS 180 conduction, half sine wave Maximum I2t for fusing I2t C 125 1900 t = 10 ms t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage t = 10 ms 100 % VRRM t = 8.3 ms reapplied 1990 1675 18 16 12.7 180.5 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.99 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.13 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 2.29 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.84 Ipk = 250 A, TJ = 25 C, tp = 10 ms sine pulse 1.60 VTM IH Typical latching current IL TJ = 25 C, anode supply 12 V resistive load kA2s 11.7 t = 0.1 ms to 10 ms, no voltage reapplied VT(TO)1 Maximum holding current A 1600 Sinusoidal half wave, initial TJ = TJ maximum Low level value of threshold voltage Maximum on-state voltage UNITS 80 DC at 75 C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 200 400 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS TJ = 125 C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber 0.2 F, 15 , gate pulse: 20 V, 65 , tp = 6 s, tr = 0.5 s Per JEDEC standard RS-397, 5.2.2.6. VALUES UNITS 300 A/s Typical delay time td Gate pulse: 10 V, 15 source, tp = 6 s, tr = 0.1 s, Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 C Typical turn-off time tq ITM = 50 A, TJ = TJ maximum, dI/dt = -5 A/s, VR = 50 V, dV/dt = 20 V/s, gate bias: 0 V 25 , tp = 500 s 110 SYMBOL TEST CONDITIONS VALUES UNITS 1 s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 C exponential to 67 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 C rated VDRM/VRRM applied 15 mA Revision: 27-Sep-17 Document Number: 94392 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM TEST CONDITIONS VALUES TJ = TJ maximum, tp 5 ms 12 TJ = TJ maximum, f = 50 Hz, d% = 50 3 3 TJ = TJ maximum, tp 5 ms 20 10 IGT TJ = 25 C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = 125 C TJ = - 40 C Maximum DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger VGD A V 120 mA 60 3.5 2.5 V 1.5 IGD DC gate voltage not to trigger W 270 TJ = - 40 C Maximum DC gate current required to trigger UNITS Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied TJ = TJ maximum 6 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.30 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1 C K/W Non-lubricated threads 15.5 (137) Lubricated threads 14 (120) Mounting torque, 10 % Approximate weight 130 Case style See dimensions - link at the end of datasheet N*m (lbf * in) g TO-94 (TO-209AC) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.042 0.030 120 0.050 0.052 90 0.064 0.070 60 0.095 0.100 30 0.164 0.165 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94392 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series Vishay Semiconductors Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) www.vishay.com 130 80RIA Series RthJC (DC) = 0.30 K/W 120 110 Conduc tion Angle 100 30 60 90 120 90 180 80 0 10 20 30 40 50 60 70 80 90 130 80RIA Series RthJC (DC) = 0.30 K/W 120 110 Conduction Period 100 90 30 80 120 180 DC 70 0 20 40 60 80 100 120 140 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 120 e lt -D K/ W a R 1.4 K/ W RMSLimit 60 /W 4K 0. 70 1 = 80 A 90 W K/ 100 hS R t 180 120 90 60 30 110 6 0. Maximum Average On-state Power Loss (W) 60 90 2K /W 50 40 Conduction Angle 3 K/ 30 20 10 W 5 K/ W 80RIA Series TJ = 125C 0 0 10 20 30 40 50 60 70 80 0 Average On-state Current (A) 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 180 DC 180 120 90 60 30 160 140 120 R th SA 100 80 = 0. 6K /W 0. 4 K/ W -D e lt a 1K /W RMSLimit Conduc tion Period 60 40 80RIA Series TJ = 125C 20 R 1.4 K/ W 2 K/ W 3 K/ W 5 K/ W 0 0 20 40 60 80 100 120 Average On-state Current (A) 140 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94392 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series 1800 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1600 1400 1200 1000 80RIA Series 800 1 10 100 2000 Maximum Non Repetitive Surge Current 1900 Versus Pulse Train Duration. Control 1800 Of Conduction May Not Be Maintained. Initial TJ = 125C 1700 No Voltage Reapplied 1600 Rated VRRM Reapplied 1500 1400 1300 1200 1100 1000 900 80RIA Series 800 700 0.01 0.1 1 Pulse Train Duration (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 100 TJ = 25C TJ = 125C 10 80RIA Series 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) 1 Steady State Value R thJC = 0.30 K/W Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics (DC Operation) 0.1 0.01 80RIA Series 0.001 0.0001 0.001 0.01 0.1 1 10 Sq uare Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 27-Sep-17 Document Number: 94392 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30ohms; tr<=0.5 s b) Recommended load line for <=30% rated di/dt : 20V, 65ohms 10 tr<=1 s 1 VGD (1) (2) (a) (3) (4) (b) IGD 0.1 0.001 (1) PGM = 100W, tp = 500s (2) PGM = 50W, tp = 1ms (3) PGM = 20W, tp = 2.5ms (4) PGM = 10W, tp = 5ms Tj=-40 C Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 Device: 80RIA Series 0.01 0.1 Frequency Limited by PG(AV) 1 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 8 0 RIA 120 M PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - ITAV x 10 A 3 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) 2 = flag terminals (gate and auxiliary cathode terminals) - RIA = essential part number 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - 4 None = stud base 1/2"-20UNF- 2 A threads M = stud base metric threads M12 x 1.75 E 6 7 - None = standard production - PbF = lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95362 Revision: 27-Sep-17 Document Number: 94392 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-209AC (TO-94) for 80RIA Series DIMENSIONS in millimeters (inches) Glass metal seal 37 )M IN . 2.5 (0.10) MAX. 16.5 (0.65) MAX. (0. O 8.5 (0.33) 9 .5 O 4.3 (0.17) Flexible lead 20 (0.79) MIN. C.S. 16 mm2 (0.025 s.i.) C.S. 0.4 mm2 Red silicon rubber (0.0006 s.i.) Red cathode 157 (6.18) 170 (6.69) White gate 215 10 (8.46 0.39) Fast-on terminals Red shrink 55 (2.17) MIN. White shrink AMP. 280000-1 REF-250 O 23.5 (0.92) MAX. 24 (0.94) MAX. 10.0 (0.39) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Document Number: 95362 Revision: 17-Sep-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: 81RIA40 81RIA80 VS-80RIA120PBF VS-80RIA80PBF VS-81RIA120PBF VS-81RIA80PBF 80RIA120 80RIA40 80RIA40MPBF 80RIA80 81RIA120 VS-81RIA40PBF VS-80RIA40PBF VS-81RIA120 VS-80RIA120 VS-80RIA40 VS-80RIA80