Technische Information / Technical Information
Netz-Dioden-Modul
Rectifier Diode Module
DD B6U 145 N 12...18 (ISOPACK) N B6
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung Tvj = - 40°C...Tvj max VRRM 1200, 1400 V
repetitive peak reverse voltage 1600, 1800 V
Stoßspitzensperrspannung Tvj = + 25°C...Tvj max VRSM 1300, 1500 V
non-repetitive peak reverse voltage 1700, 1900 V
Durchlaßstrom-Grenzeffektivwert (pro Element) IFRMSM 100 A
RMS forward current (per chip)
Ausgangsstrom TC = 100°C Id 145 A
output current TC = 84°C 173 A
TA = 45°C, KM 11 71 A
TA = 45°C, KM 33 97 A
TA = 35°C, KM 14 (VL = 45l/s) 153 A
TA = 35°C, KM 33 (VL = 90l/s) 173 A
Stoßstrom-Grenzwert Tvj = 25°C, t
SSS
= 10ms IFSM 1200 A
surge forward current Tvj = Tvj max
, tp = 10ms 1000 A
Grenzlastintegral Tvj = 25°C, t = 10ms I²t 7200 A²s
I²t-value Tvj = Tvj max
, tp = 10ms 5000 A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung Tvj = Tvj max
, iF = 150A vF max. 1,43 V
forward voltage
Schleusenspannung Tvj = Tvj max V(TO) 0,75 V
threshold voltage
Ersatzwiderstand Tvj = Tvj max rT 3,1 mΩ
forward slope resistance
Sperrstrom Tvj = Tvj max,
vR = VRRM iR max. 5 mA
reverse current
Isolations-Prüfspannung RMS, f = 50Hz, t = 1min VISOL 3,0 kV
insulation test voltage RMS, f = 50Hz, t = 1sec 3,6 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand pro Modul / per module, Θ = 120°rect RthJC max. 0,148 °C/W
thermal resistance, junction to case pro Element / per chip, Θ = 120°rect max. 0,890 °C/W
pro Modul / per module, DC max. 0,167 °C/W
pro Element / per chip, DC max. 0,700 °C/W
Übergangs-Wärmewiderstand pro Modul / per module RthCK max. 0,033 °C/W
thermal resistance, case to heatsink pro Element / per chip max. 0,200 °C/W
Höchstzulässige Sperrschichttemperatur Tvj max 150 °C
max. junction temperature
Betriebstemperatur Tc op - 40...+150 °C
operating temperature
Lagertemperatur Tstg - 40...+150 °C
storage temperature
MOD-E1; R. Jörke 09. Feb 99 A /99 Seite/page 1(6)
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Technische Information / Technical Information
Netz-Dioden-Modul
Rectifier Diode Module
DD B6U 145 N 12...18 (ISOPACK) N B6
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage Seite 3
case, see appendix page 3
Si-Elemente mit Lötkontakt, glaspassiviert
Si-pellets with soldered contact, glass-passivated
Innere Isolation Al2O3
internal insulation
Anzugsdrehmoment für mechanische Befestigung Toleranz / tolerance ±15% M1 6 Nm
mounting torque
Anzugsdrehmoment für elektrische Anschlüsse Toleranz / tolerance +5% / -10% M2 4 Nm
terminal connection torque
Gewicht G typ. 220 g
weight
Kriechstrecke 12,5 mm
creepage distance
Schwingfestigkeit f = 50Hz 50 m/s²
vibration resistance
Kühlkörper / heatsinks : KM 11; KM 14; KM 17; KM 33
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung
mit den zugehörigen Technischen Erläuterungen. / This technical Information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.
MOD-E1; R. Jörke 09. Feb 99 Seite/page 2(6)
http://store.iiic.cc/
Technische Information / Technical Information
Netz-Dioden-Modul
Rectifier Diode Module
DD B6U 145 N 12...18 (ISOPACK) N B6
MOD-E1; R. Jörke
09. Feb 99 Seite/page 3(6)
http://store.iiic.cc/
Technische Information / Technical Information
Netz-Dioden-Modul
Rectifier Diode Module DD B6U 145 N 12...18 (ISOPACK) N B6
Analytische Elemente des transienten Wärmewiderstandes ZthJC für DC
Analytical elements of transient thermal impedance ZthJC for DC
Pos. n 1 2 3 4 5 6 7
0,35500 0,24500 0,04100 0,05500
0,30200 0,03780 0,00900 0,00109
MOD-E1; R. Jörke 09. Feb 99 Seite/page 4(6)
[ ]
R C W
thn
° /
[]
τ
n
s
Analytische Funktion Z R e
thJC thn
t
n
n
n
:max
= −
−
=
∑
1
1
τ
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Technische Information / Technical Information
Netz-Dioden-Modul
Rectifier Diode Module
DD B6U 145 N 12...18 (ISOPACK) N B6
Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm Z
thJC = f(t)
Parameter: Stromflußwinkel / Current conduction angle Θ
MOD-E1; R. Jörke 09. Feb 99 Seite/page 5(6)
120° rect
DC
0,00
0,10
0,20
0,30
0,40
0,50
0,60
0,70
0,80
0,90
1,00
0,001 0,01 0,1 1 10
t [s]
Z
thJC [°C/W]
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Technische Information / Technical Information
Netz-Dioden-Modul
Rectifier Diode Module
DD B6U 145 N 12...18 (ISOPACK) N B6
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperatur T
C = f(Id)
MOD-E1; R. Jörke 09. Feb 99 Seite/page 6(6)
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
0 50 100 150 200
Id [A]
T
C[°C]
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