Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12...18 (ISOPACK) N B6 Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM 1200, 1400 V 1600, 1800 V 1300, 1500 V 1700, 1900 V IFRMSM 100 A Id 145 A 173 A TA = 45C, KM 11 71 A TA = 45C, KM 33 97 A TA = 35C, KM 14 (VL = 45l/s) 153 A TA = 35C, KM 33 (VL = 90l/s) 173 A 1200 A 1000 A 7200 As 5000 As 1,43 V 0,75 V Tvj = - 40C...Tvj max repetitive peak reverse voltage Stospitzensperrspannung VRSM Tvj = + 25C...Tvj max non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert (pro Element) RMS forward current (per chip) Ausgangsstrom TC = 100C output current TC = 84C Stostrom-Grenzwert Tvj = 25C, tSSS= 10ms surge forward current Tvj = Tvj max, tp = 10ms Grenzlastintegral Tvj = 25C, t = 10ms It-value Tvj = Tvj max, tp = 10ms IFSM It Charakteristische Werte / Characteristic values Tvj = Tvj max, iF = 150A vF Tvj = Tvj max V(TO) Tvj = Tvj max rT Tvj = Tvj max,vR = VRRM iR Isolations-Prufspannung RMS, f = 50Hz, t = 1min VISOL insulation test voltage RMS, f = 50Hz, t = 1sec Durchlaspannung max. forward voltage Schleusenspannung threshold voltage Ersatzwiderstand 3,1 m 5 mA forward slope resistance Sperrstrom max. reverse current 3,0 kV 3,6 kV Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand pro Modul / per module, = 120rect max. 0,148 C/W thermal resistance, junction to case pro Element / per chip, = 120rect max. 0,890 C/W pro Modul / per module, DC max. 0,167 C/W pro Element / per chip, DC max. 0,700 C/W max. 0,033 C/W max. 0,200 C/W Ubergangs-Warmewiderstand pro Modul / per module thermal resistance, case to heatsink pro Element / per chip RthJC RthCK Tvj max Hochstzulassige Sperrschichttemperatur 150 C Tc op - 40...+150 C Tstg - 40...+150 C max. junction temperature Betriebstemperatur operating temperature Lagertemperatur storage temperature MOD-E1; R. Jorke 09. Feb 99 A /99 http://store.iiic.cc/ Seite/page 1(6) Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12...18 (ISOPACK) N B6 Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage Seite 3 case, see appendix page 3 Si-Elemente mit Lotkontakt, glaspassiviert Si-pellets with soldered contact, glass-passivated Al2O3 Innere Isolation internal insulation Anzugsdrehmoment fur mechanische Befestigung Toleranz / tolerance 15% M1 6 Nm Toleranz / tolerance +5% / -10% M2 4 Nm mounting torque Anzugsdrehmoment fur elektrische Anschlusse terminal connection torque Gewicht G typ. 220 g 12,5 mm 50 m/s weight Kriechstrecke creepage distance Schwingfestigkeit f = 50Hz vibration resistance Kuhlkorper / heatsinks : KM 11; KM 14; KM 17; KM 33 Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. / This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. MOD-E1; R. Jorke 09. Feb 99 Seite/page 2(6) http://store.iiic.cc/ Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module MOD-E1; R. Jorke DD B6U 145 N 12...18 (ISOPACK) 09. Feb 99 N Seite/page 3(6) http://store.iiic.cc/ B6 Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12...18 (ISOPACK) N Analytische Elemente des transienten Warmewiderstandes ZthJC fur DC Analytical elements of transient thermal impedance Z thJC for DC Pos. n 1 R thn [ C / W ] 0,35500 n [s] 2 3 4 5 6 7 0,24500 0,04100 0,05500 0,30200 0,03780 0,00900 0,00109 t - R thn1 - e n n= 1 nmax Analytische Funktion: MOD-E1; R. Jorke Z thJC = 09. Feb 99 Seite/page 4(6) http://store.iiic.cc/ B6 Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12...18 (ISOPACK) N B6 1,00 0,90 120 rect 0,80 0,70 DC ZthJC [C/W] 0,60 0,50 0,40 0,30 0,20 0,10 0,00 0,001 0,01 0,1 1 10 t [s] Transienter innerer Warmewiderstand je Zweig / Transient thermal impedance per armthJC Z = f(t) Parameter: Stromfluwinkel / Current conduction angle MOD-E1; R. Jorke 09. Feb 99 Seite/page 5(6) http://store.iiic.cc/ Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12...18 (ISOPACK) N B6 160 150 140 130 120 110 TC [C] 100 90 80 70 60 50 40 30 20 0 50 100 150 200 Id [A] Hochstzulassige Gehausetemperatur / Maximum allowable case temperaturCT= f(Id) MOD-E1; R. Jorke 09. Feb 99 Seite/page 6(6) http://store.iiic.cc/ Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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