5
NOTES:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(0.01") unless otherwise noted.
PHOTOTRANSISTORS
Kingbright
L-610MP4BT/BD L-32P3C L-53P3C
PHOTOTRANSISTOR
L-610MP4BT/BD NPN BLACK PLASTIC PHOTOTRANSISTOR
ABSOLUTE MAXIMUM RATING TA
=25°C
Parameter Max. Ratings
Collector-to-Emitter Breakdown Voltage 30V
Emitter-to-Collector Breakdown Voltage 5V
Power Dissipation at (or below) 25°C
Free Air Temperature 100mW
Operating Temperature Range -40°C ~ +85°C
Storage Temperature Range -40°C ~ +85°C
Lead Soldering Temperature
(>5mm For 5sec) 260°C
T-1 (3mm) PHOTOTRANSISTOR
L-32P3CWATER CLEAR LENS
T-1 3/4 (5mm) PHOTOTRANSISTOR
L-53P3CWATER CLEAR LENS
ELECTRICAL AND RADIANT CHARACTERISTICS TA
=25°C
Symbol Parameter Min. Typ. Max. Unit Test
Condition
VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - VI C =100µA
Ee=0mW/cm2
VBR ECO Emitter-to-Collector Breakdown Voltage 5- - VI E =100µA
Ee=0mW/cm2
VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.4 VI C =500µA
Ee=5mW/cm2
ICEO Collector Dark Current - - 100 nA VCE =10V
Ee=0mW/cm2
TRRise Time (10% to 90%) -16 -µsVCE =5V
IC =1mA
RL =1K
TFFall Time (90% to 10%) -18 -µs
I (ON) On State Collector Current 0.1 0.5 -mA VCE =5V,
Ee=1mW/cm2,
λ=940nm
RCollector Current Ratio
of Phototransistor 0.8 11.25 Ic (on) (a) /
Ic (on) (b)
ABSOLUTE MAXIMUM RATING TA
=25°C
Parameter Max. Ratings
Collector-to-Emitter Breakdown Voltage 30V
Emitter-to-Collector Breakdown Voltage 5V
Power Dissipation at (or below) 25°C
Free Air Temperature 100mW
Operating Temperature Range -55°C ~ +100°C
Storage Temperature Range -55°C ~ +100°C
Lead Soldering Temperature
(>5mm For 5sec) 260°C
ELECTRICAL AND RADIANT CHARACTERISTICS TA
=25°C
Symbol Parameter Min. Typ. Max. Unit Test
Condition
VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - VI C =100µA
Ee=0mW/cm2
VBR ECO Emitter-to-Collector Breakdown Voltage 5- - VI E =100µA
Ee=0mW/cm2
VCE (SAT)Collector-to-Emitter Saturation Voltage - - 0.8 VI C =2mA
Ee=20mW/cm2
ICEO Collector Dark Current - - 100 nA VCE =10V
Ee=0mW/cm2
TRRise Time (10% to 90%) -3-µsVCE =5V
IC =1mA
RL =1K
TFFall Time (90% to 10%) -3-µs
I (ON) On State Collector Current 0.1 0.5 -mA VCE =5V,
Ee=1mW/cm2,
λ=940nm
L-53P3C
L-32P3C