Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 30V
▼ Small Size & Lower Profile RDS(ON) 9mΩ
▼ RoHS Compliant & Halogen-Free ID15.5A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient335 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range -55 to 150
Continuous Drain Current312.4
Pulsed Drain Current160
Storage Temperature Range
3.57
-55 to 150
30
+20
15.5
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
AP4034GYT-HF
Rating
Halogen-Free Product
201110241
1
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The PMPAK®3 x 3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
G
D
S
D
D
D
D
SSSGPMPAK® 3 x 3
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=12A - 6.6 9 mΩ
VGS=4.5V, ID=8A - 10 14 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.4 3 V
gfs Forward Transconductance VDS=10V, ID=12A - 24 - S
IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge ID=12A - 15 24 nC
Qgs Gate-Source Charge VDS=15V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7 - nC
td(on) Turn-on Delay Time VDS=15V - 10 - ns
trRise Time ID=1A - 5 - ns
td(off) Turn-off Delay Time RG=3.3Ω-27-ns
tfFall Time VGS=10V - 7 - ns
Ciss Input Capacitance VGS=0V - 1700 2720 pF
Coss Output Capacitance VDS=15V - 185 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF
RgGate Resistance f=1.0MHz - 1.1 2.2 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2.9A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=12A, VGS=0V, - 21 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP4034GYT-HF
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec, 160oC/W when mounted on min. copper pad.
2
A
P4034GYT-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
20
40
60
80
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
VG=4.0V
TA=25oC
0
10
20
30
40
50
60
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
7.0V
6.0V
5.0V
VG=4.0V
6
7
8
9
10
11
12
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=8A
TA=25
℃
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=12A
VG=10V
0.0
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
I
D=250uA
AP4034GYT-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4
0
2
4
6
8
0 8 16 24 32
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=12A
VDS =15V
0
400
800
1200
1600
2000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=160 ℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Operation in this area
limited by RDS(ON)
0
10
20
30
40
50
60
0123456
VGS , Gate-to-Source Voltage (V)
ID , Drain Cu rrent (A)
Tj=150oC
Tj=25oC
VDS =5V
0
4
8
12
16
20
25 50 75 100 125 150
TA , Ambient Temperature ( oC )
ID , Drain Cu rrent (A)
Tj= -40oC
