© 2011 IXYS CORPORATION, All rights reserved
OBSOLETE
DS99898OBS(05/11)
VDSS = 1100V
ID25 = 16A
RDS(on) ≤≤
≤≤
≤ 400mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1100 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C16A
IDM TC= 25°C, pulse width limited by TJM 75 A
IAR TC= 25°C15A
EAS TC= 25°C 1.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 15 V/ns
PDTC= 25°C 320 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
FCMounting force 20..120/4.5..27 N/lb.
Weight 5g
G = Gate D = Drain
S = Source
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1100 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 2.5 mA
RDS(on) VGS = 10V, ID = 15A, Note 1 400 mΩ
Features
•Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
•Low drain to tab capacitance(<30pF)
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Fast intrinsic Rectifier
Advantages
•Easy assembly
•Space savings
•High power density
Isolated Tab
ISOPLUS247
E153432
IXFR30N110P
PolarTM HiPerFETTM
Power MOSFET
Applications:
zHigh Voltage Switched-mode and
resonant-mode power supplies
zHigh Voltage Pulse Power Applications
zHigh Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC converters
zHigh Voltage DC-AC inverters
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR30N110P
OBSOLETE
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 15A, Note 1 15 25 S
Ciss 13.6 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 795 pF
Crss 70 pF
RGi Gate input resistance 1.50 Ω
td(on) Resistive Switching Times 50 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 15A 48 ns
td(off) RG= 1Ω (External) 83 ns
tf 52 ns
Qg(on) 235 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 15A 102 nC
Qgd 79 nC
RthJC 0.39 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 30 A
ISM Repetitive, pulse width limited by TJM 120 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 1.8 μC
IRM 13 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 20A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
ISOPLUS247 (IXFR) Outline
© 2011 IXYS CORPORATION, All rights reserved
OBSOLETE IXFR30N110P
Fig. 6. Maximum Drain Current vs.
Case Temperatu r e
0
2
4
6
8
10
12
14
16
18
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centi grade
I
D
- Am peres
Fi g. 1. Ou tpu t Ch ar acteri sti cs
@ 25ºC
0
5
10
15
20
25
30
012345678910
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
8V
7
V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Am peres
V
GS
= 10
V
7
V
6V
5V
Fig. 3. Output Characteristics
@ 125ºC
0
5
10
15
20
25
30
0 5 10 15 20 25
V
DS
- Volts
I
D
- Am peres
V
GS
= 10
V
5
V
7V
6V
Fig. 4. RDS(on) Normalized to ID = 15A Valu e
vs. Ju ncti o n Temper atu re
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50-250 255075100125150
T
J
- Deg ree s Cen ti grade
R
DS(on)
- N ormalize d
V
GS
= 10V
I
D
= 30
A
I
D
= 15
A
Fig. 5. RDS(on) Normalized to ID = 15A Valu e
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 5 10 15 20 25 30 35 40 45 50 55 60 65
I
D
- Amperes
R
DS(on)
- N ormalize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR30N110P
OBSOLETE
IXYS REF: F_30N110P(96) 04-01-08-A
Fi g . 12. Maximum Tran si en t Ther mal
Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GS
- Vo lts
I
D
- A mpere s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Tr ansconductance
0
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20 25 30 35 40 45 50
I
D
- Amperes
g f s
- S ie m e ns
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- A mpere s
T
J
= 125ºC T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 550V
I
D
= 15A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
