OBSOLETE IXFR30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1100 V VDGR TJ = 25C to 150C, RGS = 1M 1100 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 16 A IDM TC = 25C, pulse width limited by TJM 75 A IAR TC = 25C 15 A EAS TC = 25C 1.5 J dV/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns PD TC = 25C 320 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Isolated Tab G = Gate S = Source * Silicon chip on Direct-Copper-Bond 300 C TSOLD Plastic body for 10s 260 C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ * * * FC Mounting force 20..120/4.5..27 N/lb. * 5 g BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V z RDS(on) TJ = 125C VGS = 10V, ID = 15A, Note 1 (c) 2011 IXYS CORPORATION, All rights reserved V 200 nA 50 A 2.5 mA Easy assembly Space savings High power density Applications: V 6.5 substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Advantages * * * Characteristic Values Min. Typ. Max. D = Drain Features Maximum lead temperature for soldering Symbol Test Conditions (TJ = 25C, unless otherwise specified) 1100V 16A 400m 300ns ISOPLUS247 E153432 TL Weight = = z z z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters 400 m DS99898OBS(05/11) IXFR30N110P OBSOLETE Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 15A, Note 1 15 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss ISOPLUS247 (IXFR) Outline 25 S 13.6 nF 795 pF 70 pF 1.50 50 ns RGi Gate input resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 * VDSS, ID = 15A 48 ns td(off) RG = 1 (External) 83 ns 52 ns 235 nC 102 nC 79 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 15A Qgd 0.39 C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM C/W Characteristic Values Min. Typ. Max. 30 A Repetitive, pulse width limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 20A, -di/dt = 100A/s VR = 100V, VGS = 0V 1.8 C 13 A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 OBSOLETE Fig. 1. Output Characteristics @ 25C IXFR30N110P Fig. 2. Extended Output Characteristics @ 25C 30 70 VGS = 10V 8V VGS = 10V 60 25 ID - Amperes ID - Amperes 50 20 15 7V 7V 40 30 10 20 5 6V 10 6V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 3.2 30 VGS = 10V VGS = 10V 2.8 RDS(on) - Normalized 25 ID - Amperes 15 VDS - Volts VDS - Volts 7V 20 15 10 6V 5 2.4 2 I D = 30A I D = 15A 1.6 1.2 0.8 5V 0 0.4 0 5 10 15 20 25 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 18 2.6 VGS = 10V 2.4 TJ = 125C 16 2.2 14 2.0 12 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 10 8 6 TJ = 25C 1.2 4 1.0 2 0.8 0 0 5 10 15 20 25 30 35 40 ID - Amperes (c) 2011 IXYS CORPORATION, All rights reserved 45 50 55 60 65 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR30N110P OBSOLETE Fig. 7. Input Admittance Fig. 8. Transconductance 55 40 50 35 TJ = - 40C 45 40 g f s - Siemens ID - Amperes 30 TJ = 125C 25C - 40C 25 20 15 25C 35 30 25 125C 20 15 10 10 5 5 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 40 45 50 Fig. 10. Gate Charge 90 16 80 14 70 VDS = 550V I D = 15A I G = 10mA 12 60 VGS - Volts IS - Amperes 20 ID - Amperes 50 40 10 8 6 30 TJ = 125C TJ = 25C 20 4 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 50 VSD - Volts 100 150 200 250 300 350 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_30N110P(96) 04-01-08-A