BFP460 Low Noise Silicon Bipolar RF Transistor * General purpose low noise amplifier 3 for low voltage, low current applications 2 4 * High ESD robustness, typical 1500 V (HBM) 1 * Low minimum noise figure 1.1 dB at 1.8 GHz * High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz * Pb-free (RoHS compliant) and halogen-free package with visible leads * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP460 Marking Pin Configuration ABs 1 = E 2 = C 3 = E 4=B - Package - SOT343 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 C 4.5 TA = -55 C 4.2 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 70 Base current IB 7 Total power dissipation1) Ptot 230 mW Junction temperature TJ 150 C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 mA TS 92C 1T S is measured on the collector lead at the soldering point to the pcb 2013-09-13 1 BFP460 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 250 K/W Values Unit Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol min. typ. max. 4.5 5.8 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 15 V, VBE = 0 - - 1000 VCE = 2 V, VBE = 0 - 1 30 VCE = 5 V, VBE = 0 , TA = 85C - 2 40 VCB = 2 V, IE = 0 - 1 30 VCB = 5 V, IE = 0 - - 30 IEBO - 1 500 hFE 90 120 160 Verified by random sampling Collector-base cutoff current ICBO Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current gain - VCE = 3 V, IC = 20 mA , pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2013-09-13 2 BFP460 Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 16 22 - Ccb - 0.32 0.45 Cce - 0.28 - Ceb - 0.55 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin VCE = 2V, IC = 3 mA , ZS = ZSopt, f = 100 MHz - 0.7 - VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 1.8 GHz - 1.1 - VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 3 GHz - 1.2 - 2013-09-13 3 BFP460 Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics (verified by random sampling) Maximum power Gain1) dB G max IC = 3 mA, VCE = 1.5 V, ZS = Z Sopt,ZL = ZLopt, f = 100 MHz - 26.5 - IC = 20 mA, VCE = 3 V, ZS = Z Sopt, ZL = ZLopt, f = 1,8 GHz - 17.5 - f = 3 GHz - 12.5 - |S21e|2 Transducer gain dB IC = 3 mA, VCE = 1.5 V, ZS = Z L = 50, - 20 - f = 1.8 GHz - 15 - f = 3 GHz - 10.5 - f = 100 MHz IC = 20 mA, VCE = 3 V, Z S = ZL = 50 , Third order intercept point at output2) IP3 dBm VCE = 3 V, IC = 20 mA, f = 100 MHz - 23.5 - VCE = 3 V, IC = 20 mA, f = 1.8 GHz - 27.5 - VCE = 3V, IC = 20mA , ZS=ZL = 50, f = 100 MHz - 9.5 - VCE = 3V, IC = 20mA, ZS=ZL = 50, f = 1.8 GHz - 11.5 - VCE = 3V, IC = 35mA, ZS=ZL = 50, f = 1.8 GHz - 13 - 1dB compression point at output P-1dB 1/2 ma = |S21 / S12| (k-(k-1) ), Gms = S21 / S12 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 1G 2013-09-13 4 BFP460 Total power dissipation P tot = (TS) Collector-base capacitance Ccb = (VCB ) f = 1MHz 260 V 0.7 pF 220 200 0.5 CCB 180 160 0.4 140 120 0.3 100 80 0.2 60 40 0.1 20 0 0 15 30 45 60 75 90 105 120 A 0 0 150 2 4 6 8 10 V 14 VCB Third order Intercept Point IP3 = (IC) Transition frequency fT = (IC) (Output, ZS = ZL = 50) f = 1 GHz VCE = parameter, f = 1800 MHz VCE = parameter 24 33 dBm 4V 29 2V 20 3V 27 25 1V 18 2V 23 fT IP3 3-4V GHz 21 16 14 19 17 12 15 10 13 1V 11 8 9 6 7 5 0 10 20 30 40 mA 4 0 55 IC 10 20 30 40 mA 60 IC 2013-09-13 5 BFP460 Power gain Gma, Gms, |S21|2 = (f) Power gain Gma, Gms = (IC) VCE = 3 V, IC = 20 mA VCE = 3V f = parameter in GHz 50 24 dB 0.9 dB 40 20 35 18 30 16 G G 1.8 25 20 15 2.4 14 Gms 3 12 |S21| 4 10 Gma 5 10 8 5 6 0 0 1 2 3 GHz 4 4 0 6 6 10 20 30 40 mA 60 IC f Power gain Gma, Gms = (VCE ) IC = 20 mA Noise figure F = (IC ) VCE = 2 V, f = parameter f = parameter in GHz ZS = ZSopt 24 0.9 dB 20 1.8 G 18 16 2.4 14 3 12 4 10 5 8 6 6 4 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VCE 2013-09-13 6 BFP460 Third order Intercept Point IP3 = (IC) Noise figure F = (f) (Output, ZS = ZL = 50) VCE = 2V, ZS = ZSopt , IC = parameter VCE = parameter, f = 100MHz 32 dBm IP3 24 20 1.5V 2V 2.5V 3V 4V 16 12 8 4 0 0 10 20 30 40 50 60 mA 80 IC Source impedance for min. noise figure vs. frequency VCE = 2V, IC = parameter 2013-09-13 7 BFP460 SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP460 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 6 GHz using typical devices. The BFP460 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 2013-09-13 8 Package SOT343 BFP460 2013-09-13 9 BFP460 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2013-09-13 10