BAS85
SCHOTTKY BARRIER DIODE
FEATURES :
* For general purpose applications.
* This diode features low turn-on voltage.
* This device isprotected by a PN junction guard
guard ring against excessive voltage, such as
electrostatic discharges
* This diode is also available in the DO-35 case
with type designation BAT85.
* Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Symbol Value Unit
Continuous Reverse Voltage VRV
Continuous Forward Current IFmA
Peak Forward Current IFM mA
Forward Surge Current (tp < 1s, Tamb = 25 °C) IFSM mA
Power Dissipation (Infinite Heatsink) PDmW
Thermal Resistance Junction to Ambient Air RθJA °C/W
Junction Temperature TJ°C
Storage temperature range TSTG °C
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics (TJ = 25 °C unless otherwise noted)
Parameter Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 30 - - V
Reverse Current IRVR = 25 V -0.2 2.0 μA
IF = 1mA - - 0.32
Forward Voltage IF = 10mA - - 0.40
Pulse Test tp <300μs , δ <2% IF = 30mA -0.5 -
IF = 100mA - - 0.80
Diode Capacitance Cd VR = 1V, f = 1MHz - - 10 pF
IF =10mA to IR = 10mA ,
measured at IR = 1mA
Page 1 of 2 Rev. 03 : July 16, 2010
125
-55 to + 150
30
200(1)
300(1)
600(1)
200(1)
430(1)
V
ns
IR = 10 µA (pulsed)
5--
Test Condition
Parameter
Reverse Recovery Time
VF
Trr
Dimensions in inches and ( millimeters )
0.142(3.6)
0.134(3.4)
φ 0.063 (1.64)
0.055 (1.40) 0.019(0.48)
0.011(0.28)
Cathode Mark
MiniMELF (SOD-80C)
Mounting Pad Layout
0.049 (1.25)Min.
0.197 (5.00)
REF
0.098 (2.50)
Max.
0.079 (2.00)Min.
IATF 0060636
SGS TH07/1033
TH09/2479
TH97/2478
FIG.1 - MAXIMUM REVERSE POWER DISSIPATION FIG.2 - DIODE CAPACITANCE VS.
VS. JUNCTION TEMPERATURE REVERSE VOLTAGE
FIG.3 - FORWARD CURRENT VS. FIG.4 - REVERSE CURRENT VS. JUNCTION
FORWARD VOLTAGE TEMPERATURE
Page 2 of 2 Rev. 03 : July 16, 2010
RATINGS AND CHARACTERISTIC CURVES ( BAS85 )
REVERSE POWER DISSIPATION, (mW)
JUNCTION TEMPERATURE, (°C)
40
025 100 150
80
120
160
200
50 125 0.1
0
2
4
10
8
6
REVERSE VOLTAGE, (V)
CAPACITANCE, (pF)
FORWARD VOLTAGE, (V)
FORWARD CURRENT, (A)
1000
100
10
1.0
REVERSE CURRENT, (nA)
100
1000
10
1.0
1.0 10 100
f = 1 MHz
75
0.1
0
0.5
1.0
1.5
25 100 150
50 125
75
JUNCTION TEMPERATURE, (°C)
VR = 30 V
RthJA = 540 kW PR - Limit at
100% VR
PR - Limit at
80% VR
V
R
= V
RRM
TJ = 25 °C
T
J
= 150 °C
IATF 0060636
SGS TH07/1033
TH09/2479
TH97/2478
