TH97/2478 BAS85 TH09/2479 IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE MiniMELF (SOD-80C) FEATURES : Cathode Mark * For general purpose applications. * This diode features low turn-on voltage. * This device isprotected by a PN junction guard guard ring against excessive voltage, such as electrostatic discharges * This diode is also available in the DO-35 case with type designation BAT85. * Pb / RoHS Free 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. MECHANICAL DATA : 0.079 (2.00)Min. Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter 25 C ambient temperature unless otherwise specified.) Symbol Value Unit Continuous Reverse Voltage VR 30 V Continuous Forward Current IF 200 (1) mA Peak Forward Current Forward Surge Current (tp < 1s, Tamb = 25 C) IFM 300(1) mA IFSM 600(1) mA Power Dissipation (Infinite Heatsink) PD 200(1) mW 430(1) 125 C/W Junction Temperature RJA TJ Storage temperature range TSTG -55 to + 150 C Thermal Resistance Junction to Ambient Air C Note: (1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics (TJ = 25 C unless otherwise noted) Parameter Reverse Breakdown Voltage Reverse Current Forward Voltage Pulse Test tp <300s , <2% Diode Capacitance Reverse Recovery Time Page 1 of 2 Symbol V(BR)R IR VF Cd Trr Test Condition IR = 10 A (pulsed) Min Typ Max 30 - - Unit V A VR = 25 V - 0.2 2.0 IF = 1mA - - 0.32 IF = 10mA - - 0.40 IF = 30mA - 0.5 - IF = 100mA - - 0.80 VR = 1V, f = 1MHz - - 10 pF - - 5 ns IF =10mA to IR = 10mA , measured at IR = 1mA V Rev. 03 : July 16, 2010 TH97/2478 TH09/2479 IATF 0060636 SGS TH07/1033 RATINGS AND CHARACTERISTIC CURVES ( BAS85 ) FIG.1 - MAXIMUM REVERSE POWER DISSIPATION FIG.2 - DIODE CAPACITANCE VS. REVERSE VOLTAGE 10 200 f = 1 MHz VR = 30 V 160 8 RthJA = 540 kW 120 CAPACITANCE, (pF) REVERSE POWER DISSIPATION, (mW) VS. JUNCTION TEMPERATURE PR - Limit at 100% VR 80 PR - Limit at 80% VR 40 6 4 2 0 0 25 50 75 125 100 0.1 150 1.0 JUNCTION TEMPERATURE, (C) 10 100 REVERSE VOLTAGE, (V) FIG.3 - FORWARD CURRENT VS. FIG.4 - REVERSE CURRENT VS. JUNCTION FORWARD VOLTAGE TEMPERATURE 1000 1000 VR = VRRM REVERSE CURRENT, (nA) FORWARD CURRENT, (A) TJ = 150 C 100 TJ = 25 C 10 1.0 100 10 1.0 25 50 75 100 125 150 JUNCTION TEMPERATURE, (C) 0.1 0 0.5 1.0 1.5 FORWARD VOLTAGE, (V) Page 2 of 2 Rev. 03 : July 16, 2010