Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 1 of 6 April 2006
AH114
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
Product Features
x 60 – 2500 MHz
x +24 dBm P1dB
x +41 dBm Output IP3
x 19 dB Gain @ 900 MHz
x 14.5 dB Gain @ 1900 MHz
x +5V Single Positive Supply
x Lead-free / Green / RoHS-
compliant SOT-89 Package
Applications
x Final stage amplifiers for
Repeaters
x Mobile Infrastructure
x DBS / WLL / WLAN / WiBro
x Defense / Homeland Security
Product Description
The AH114 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+41 dBm OIP3 and +24 dBm of compressed 1dB power. It
is housed in a lead-free/green/RoHS-compliant SOT-89
SMT package. All devices are 100% RF and DC tested.
The AH114 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
AH114 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
RF IN GND
GND
1
2
3
4
Function Pin No.
Input / Base 1
Output / Collector 3
Ground 2, 4
Specifications (1)
Parameters Units Min Typ Max
Operational Bandwidth MHz 60 2500
Test Frequency MHz 1900
Gain dB 13.5 14.5
Input Return Loss dB 10
Output Return Loss dB 14
Output P1dB dBm +23
Output IP3 (2) dBm +39.5 +41
IS-95A Channel Power
@ -45 dBc ACPR dBm +17
Noise Figure dB 5.0
Test Frequency MHz 2140
Gain dB 14
Output P1dB dBm +23
Output IP3 (2) dBm +40
Operating Current Range mA 130 150 170
Device Voltage V +5
1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 qC
Storage Temperature -65 to +150 qC
RF Input Power (continuous) +15 dBm
Device Voltage +6 V
Device Current 220 mA
Junction Temperature +250 qC
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameters Units Typical
Frequency MHz 900 1900 2140
S21 - Gain dB 19 14.5 14
S11 - Input R.L. dB -14 -10 -25
S22 - Output R.L. dB -10 -14 -20
Output P1dB dBm +24 +23 +23
Output IP3 dBm +40 +41 +40
Noise Figure dB 5.0 5.0 6.0
Supply Bias +5 V @ 150 mA
Ordering Information
Part No. Description
AH114-89G ¼ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
AH114-89PCB900 900 MHz Evaluation Board
AH114-89PCB1900 1900 MHz Evaluation Board
AH114-89PCB2140 2140 MHz Evaluation Board