S8658-01 - Hamamatsu Photonics K.K.

S8658-01

S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS (Fiber Optic plate with Scintillator) to convert X-

rays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close

proximity to form a long and narrow sensor format. Effective size of each active area is 73.728 (H) × 6.144 (V) mm

, so the overall active area

length of the three chips is up to 220 mm in length. Each CCD chip has 1536 × 128 pixels and the pixel size is 48 × 48 µm.

When used in TDI operation mode which is a special feature of this CCD image sensor, even X-ray images of a moving object can be clearly

acquired, making S8658-01 ideal for non-destructive inspection of products carried on a belt conveyor, etc.

Features

FFT-CCD coupled with FOS for X-ray imaging

1536 (H) × 128 (V) pixel format

Pixel size: 48 × 48 µm

Slit-like image of 220 mm long by aligning 3 CCD chips

together

Coupled with FOS for X-ray imaging

TDI (Time Delay Integration) operation

100 % fill factor

Wide dynamic range

Low dark current

MPP operation

Applications

General X-ray imaging

Non-destructive inspection

Dental panorama, cephalo

IMAGE SENSOR

CCD area image sensor

Front-illuminated FFT-CCD for X-ray imaging

■ Selection guide

Type No. Cooling Number of

total pixels

Number of

active pixels

Active area

[mm (H) × mm(V)]

S8658-01 Non-cooled 1536 × 128 1536 × 128 73.728 × 6.144

Note) As an input window, FOS is suited to S8658-01.

■ General ratings

Parameter Specification

CCD structure Full frame transfer or TDI

X-ray sensitive area 220 × 6 mm

Fill factor 100 %

Number of active pixels 1536 (H) × 128 (V) *1

Pixel size 48 (H) × 48 (V) µm

CCD active area 73.728 (H) × 6.144 (V) mm *1

Vertical clock phase 2 phase and 2 line

Horizontal clock phase 2 phase and 2 line

Output circuit Two-stage MOSFET source follower with load resistance

X-ray resolution 4 to 6 Lp/mm at 60 kVp, 20 µGy

Total dose irradiation 50 Gy max.

Package 60 pin ceramic package

Window FOS (Fiber Optic plate with Scintillator)

*1: Number of active pixels per chip. Three chips are used.

CCD area image sensor S8658-01

■ Absolute maximum ratings (Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Storage temperature Tstg -20 - +70 °C

Operating temperature To p r 0 - +40 °C

OD voltage VOD -0.5 - +20 V

RD voltage VRD -0.5 -+18 V

ISV voltage VISV -0.5 - +18 V

IGV voltage VIGV -15 -+15 V

IGH voltage VIGH -15 - +15 V

SG voltage VSG -15 -+15 V

OG voltage VOG -15 - +15 V

RG voltage VRG -15 -+15 V

TG voltage VTG -15 - +15 V

Vertical clock voltage VP1AV, VP2AV

VP1BV, VP2BV -15 -+15 V

Horizontal clock voltage VP1AH, VP2AH

VP1BH, VP2BH -15 - +15 V

■ Operating conditions (MPP mode, Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Output transistor drain voltage VOD 12 15 18 V

Reset drain voltage VRD 12 13 14 V

Output gate voltage VOG -0.5 2 5 V

Output transistor ground voltage VSSA - 0 - V

Substrate voltage VSSD -5 0 - V

Vertical input source VISV - VRD -

Vertical input gate VIGV -8 0 -Te s t poin t

Horizontal input gate VIGH -8 0 -

High VP1AVH, VP2AVH

VP1BVH, VP2BVH 036

Vertical shift register

clock voltage Low VP1AVL, VP2AVL

VP1BVL, VP2BVL -9 -8 -7

High VP1AHH, VP2AHH

VP1BHH, VP2BHH 036

Horizontal shift register

clock voltage Low VP1AHL, VP2AHL

VP1BHL, VP2BHL -9 -8 -7

High VSGH 036

Summing gate voltage Low VSGL -9 -8 -7 V

High VRGH 036

Reset gate voltage Low VRGL -9 -8 -7 V

High VTGH 036

Transfer gate voltage Low VTGL -9 -8 -7 V

■ Electrical characteristics (Ta=25 °C)

Parameter Symbol Remark Min. Typ. Max. Unit

Signal output frequency fc - 2 4 MHz

Reset clock frequency frg - 2 4 MHz

Vertical shift register capacitance CP1AV, CP2AV

CP1BV, CP2BV - 15000 - pF

Horizontal shift register capacitance CP1AH, CP2AH

CP1BH, CP2BH -500 -pF

Summing gate capacitance CSG -15- pF

Reset gate capacitance CRG -10 -pF

Transfer gate capacitance CTG - 500 - pF

Transfer efficiency CTE *20.99995 0.99999 -

DC output level Vout *35811V

Output impedance Zo *3-500 -Ω

Power dissipation P *3, *4-60-mW

*2: Measured at half of the full well capacity. CTE is defined per pixel.

*3: VOD=15 V.

*4: Power dissipation of the on-chip amplifier (each chip).

CCD area image sensor S8658-01

■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

Parameter Symbol Remark Min. Typ. Max. Unit

Saturation output voltage Vsat - Fw × Sv - V

Vertical 600 1200 -

Horizontal 600 1200 -

Full well capacity

Summing

600 1200 -

ke-

CCD node sensitivity Sv *5 0.45 0.6 - µV/e-

Dark current (MPP mode) DS *6 - 8 24 ke-/pixel/s

Ta=25 °C - 90 -

Readout noise Ta=-40 °C Nr *7

- 60 120

e-rms

Dynamic range DR *8 5000 20000 -

X-ray response non-uniformity XRNU *9, *10 - ±10 ±30 %

White spots - - 10 Point

defects

*11 Black spots - - 10

Cluster defects *12 - - 0

Blemish

Column defects

*13 - - 0

X-ray resolution ∆R 4 6 - Lp/mm

*5: VOD=15 V.

*6: Dark current doubles for every 5 to 7 °C.

*7: Operating frequency is 2 MHz.

*8: Dynamic range = Full well capacity / Readout noise

*9: X-ray irradiation of 60 kVp, measured at half of the full well capacity.

*10: XRNU (%) = Noise / Signal × 100

Noise: Fixed pattern noise (peak to peak)

Measuring region that is within 220.0 mm (H) × 6.0 mm (V) (refer to dimensional outline)

*11: White spots > 20 times of typ. dark signal (8 ke-/pixel/s).

Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity.

*12: continuous 2 to 9 point defects.

*13: continuous >10 point defects.

SPACIAL FREQUENCY (Line pair/mm)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

(X-ray source: 60 kVp)

CTF

48263715 109

X-RAY EXPOSURE (µGy)

1000

500

(X-ray source: 70 kVp, Filter: aluminum 4 mmt)

OUTPUT VOLTAGE (mV)

20 4010 30

■ Resolution

KMPDB0248EA

■ Response

KMPDB0249EB

CCD area image sensor S8658-01

......

234

125126 127 128

S1531

S1532

S1533

S1534

S1535

S1536

......

1531

1532

1533

1534

1535

1536

ISV

A14, B14

A15, B15

IGV

P1BV

P2BV

P1AV

P2AV

SSA

P2AH P1AH P2BH P1BH

IGHSSD

......

234

125126 127 128

S1531

S1532

S1533

S1534

S1535

S1536

......

1531

1532

1533

1534

1535

1536

P2AHP1AHP2BHP1BH

IGH SSD

LEFT CHIP (CHIP A), CENTER CHIP (CHIP B) RIGHT CHIP (CHIP C)

S1, ... , S1536: ACTIVE ELEMENTS S1, ... , S1536: ACTIVE ELEMENTS

A16, B16

A17, B17

A18, B18

A19, B19

A20, B20

A1, B1

A2, B2

A3, B3

A4, B4

A5, B5

A6, B6

A7, B7 A8, B8 A9, B9

A10, B10 A11, B11 A12, B12 A13, B13

C1 C2 C3 C4 C5 C6

ISV

IGV

P1BV

P2BV

P1AV

P2AV

SSA

C10

C11

C12

C13

C14

C15

C16

C17

C18

C19

C20

■ Device structure

KMPDC0143EA

■ Pixel format ← Left Horizontal Direction → Right

Blank Optical

black Isolation Effective Isolation Optical

black Blank

0 0 0 1536 0 0 0

Top ← Vertical direction → Bottom

Isolation Effective Isolation

0 128 0

■ Timing chart (TDI operation)

P1AV, P1BV

P2AV, P2BV

P1AH, P1BH

P2AH, P2BH

ENLARGED VIEW

Tpwv

Tovr

Tpwr

P1AH, P1BH

P2AH, P2BH

S2 S3S1 S4 S5 S1535 S1536

Tpwh, Tpws

KMPDC0142EB

CCD area image sensor S8658-01

■ Timing chart (TDI operation, 2 × 2 pix el binning)

P1AV, P1BV

P2AV, P2BV

P1AH, P1BH

P2AH, P2BH

ENLARGED VIEW

Tpwv

Tovr

Tpwr

P1AH, P1BH

P2AH, P2BH

S1 + S2 S3 + S4 S1535 + S1536

Tpwh, Tpws

KMPDC0111EC

Parameter Symbol Remark Min. Typ. Max. Unit

Pulse width tpwv 30 60 - µs

P1AV, P1BV,

P2AV, P2BV, TG Rise and fall time tprv, tpfv *14, *15

200 - - ns

Pulse width tpwh 125 250 -ns

Rise and fall time tprh, tpfh 10 - - ns

P1AH, P1BH,

P2AH, P2BH Duty ratio

*15

-50 - %

Pulse width tpws 125 250 - ns

Rise and fall time tprs, tpfs 10 - - nsSG

Duty ratio - 50 - %

Pulse width tpwr 10 50 -ns

RG Rise and fall time tprr, tpfr 5 - - ns

TG-P1AH, P1BH Overlap time tovr 10 20 - µs

*14: TG terminal can be short-circuited to P2AV terminal.

*15: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.

CCD area image sensor S8658-01

KMPDA0149ED

■ Dimensional outline (unit: mm)

15.24

30.4845.72 45.72

60.96 1.6

FOP

3.0

5.6

60.96

B20 ← B14A20 ←A14

LEFT CHIP RIGHT CHIP

→A1 A13 →C1 C13→B1 B13

C20 ← C14

CENTER CHIP

0.45 2.54

3.4

FOP

7.2 ± 0.2

28.0 ± 0.3

25.4

X-RAY

SENSITIVE AREA: 220.0 (H) × 6.0 (V)

223.0 ± 0.5

FOP

228.0 ± 0.3

SCINTILLATOR

TDI direction

LEFT CHIP

EDGE PIXEL

DEAD SPACE 1:

250 µm MIN.

350 µm MAX.

±50 µm MAX.

CENTER CHIP

EDGE PIXEL

DEAD SPACE 2:

130 µm MIN.

200 µm MAX.

±50 µm MAX.

RIGHT CHIP

*1 Details *2 Details

CCD area image sensor S8658-01

■ Pin connections

Pin No. Symbol Description Remark

A1, B1 RG Reset gate

A2, B2 RD Reset drain

A3, B3 SSA Analog ground

A4, B4 OS Output transistor source

A5, B5 OD Output transistor drain

A6, B6 OG Output gate

A7, B7 SG Summing gate

A8, B8 P2AH CCD horizontal register clock A-2

A9, B9 P1AH CCD horizontal register clock A-1

A10, B10 SSD Digital ground

A11, B11 P2BH CCD horizontal register clock B-2 Same timing as P2AH

A12, B12 P1BH CCD horizontal register clock B-1 Same timing as P1AH

A13, B13 IGH Test point (Horizontal input gate)

A14, B14 ISV Test point (Vertical input source) Shorted to RD

A15, B15 IGV Test point (Vertical input gate)

A16, B16 P1BV CCD vertical register clock B-1 Same timing as P1AV

A17, B17 P2BV CCD vertical register clock B-2 Same timing as P2AV

A18, B18 P1AV CCD vertical register clock A-1

A19, B19 P2AV CCD vertical register clock A-2

A20, B20 TG Transfer gate

C1 IGH Test point (Horizontal input gate)

C2 P1BH CCD horizontal register clock B-1 Same timing as P1AH

C3 P2BH CCD horizontal register clock B-2 Same timing as P2AH

C4 SSD Digital ground

C5 P1AH CCD horizontal register clock A-1

C6 P2AH CCD horizontal register clock A-2

C7 SG Summing gate

C8 OG Output gate

C9 OD Output transistor drain

C10 OS Output transistor source

C11 SSA Analog ground

C12 RD Reset drain

C13 RG Reset gate

C14 TG Transfer gate

C15 P2AV CCD vertical register clock A-2

C16 P1AV CCD vertical register clock A-1

C17 P2BV CCD vertical register clock B-2 Same timing as P2AV

C18 P1BV CCD vertical register clock B-1 Same timing as P1AV

C19 IGV Test point (Vertical input gate)

C20 ISV Test Point (Vertical input source) Shorted to RD

■ Precautions for use (Electrostatic countermeasures)

* Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with

an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

* Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

* Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to

discharge.

* Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to

the amount of damage that occurs.

CCD area image sensor S8658-01

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

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China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of June, 2013.

Cat. No. KMPD1078E09 Jun. 2013 DN

■ Notice

• This product is warranted for a period of 12 months after the date of the shipment.

The warranty is limited to replacement or repair of any defective product due to defects in workmanship or materials used in

manufacture. The warranty does not cover loss or damage caused by natural disaster, misuse (including modifications and any

use not complying with the environment, application, usage and storage conditions described in this datasheet), or total radiation

dose over 50 Gy (incident X-ray energy: 70 kVp) even within the warranty period.