Document Number: 93359 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 06-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 3.0 A
VS-30BQ015-M3
Vishay Semiconductors
FEATURES
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Halogen-free according to IEC 61249-2-21
definition
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
The VS-30BQ015-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package SMC
IF(AV) 3.0 A
VR15 V
VF at IF0.3 V
IRM 50 mA at 100 °C
TJ max. 125 °C
Diode variation Single die
EAS 1.5 mJ
Cathode Anode
SMC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.0 A
VRRM 15 V
IFSM tp = 5 μs sine 650 A
VF1.0 Apk, TJ = 75 °C 0.30 V
TJRange - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30BQ015-M3 UNITS
Maximum DC reverse voltage VR15 V
Maximum working peak reverse voltage VRWM 25
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV)
50 % duty cycle at TL = 83 °C, rectangular waveform 3.0
A
50 % duty cycle at TL = 78 °C, rectangular waveform 4.0
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
650
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 12 mH 1.5 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93359
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 06-Sep-10
VS-30BQ015-M3
Vishay Semiconductors Schottky Rectifier, 3.0 A
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
3 A TJ = 25 °C 0.35
V
6 A 0.43
3 A TJ = 75 °C 0.30
6 A 0.38
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VR
4mA
TJ = 100 °C 50
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1120 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 3.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ (1) - 55 to 125 °C
Maximum storage temperature range TStg - 55 to 150
Maximum thermal resistance,
junction to lead RthJL (2)
DC operation
12
°C/W
Maximum thermal resistance,
junction to ambient RthJA 46
Approximate weight 0.24 g
0.008 oz.
Marking device Case style SMC (similar to DO-214AB) 3C
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 93359 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 06-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VS-30BQ015-M3
Schottky Rectifier, 3.0 A Vishay Semiconductors
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
0.1
1
10
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
0.1 0.3 0.60.50.40.20
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.01
0.1
1
10
100
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
39
15
1260
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
CT - Juction Capacitance (pF)
VR - Reverse Voltage (V)
12 16
840
TJ = 25 °C
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
100
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
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VS-30BQ015-M3
Vishay Semiconductors Schottky Rectifier, 3.0 A
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
60
80
100
120
140
160
180
Allowable Lead Temperature (°C)
IF(AV) - Average Forward Current (A)
1.5 4.50.50 2.5 3.52.01.0 3.0 4.0
DC
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.5
1.0
1.5
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0.5 1.5 2.0 2.5 3.5 4.5
4.01.003.0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
10 000
100010010
At any rated load condition
and with rated VRRM applied
following surge
Document Number: 93359 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 06-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
VS-30BQ015-M3
Schottky Rectifier, 3.0 A Vishay Semiconductors
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30BQ015-M3/9AT 9AT 3500 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95402
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
2- Current rating
3- B = SMC
4- Q = Schottky “Q” series
5- Voltage rating (015 = 15 V)
1- Vishay Semiconductors product suffix
Device code
51 32 4 6
VS- 30 B Q 015 -M3
- Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
6
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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