0.038 (0.97)
0.100 (2.54)
0.050 (1.27)
45°
0.046 (1.16)
0.036 (0.92)
13
0.030 (0.76)
NOM
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.500 (12.7)
MIN
0.255 (6.47)
0.225 (5.71)
Ø0.020 (0.51) 3X
2
PACKAGE DIMENSIONS
FEATURES
• Hermetically sealed package
• Narrow reception angle
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The L14G1/L14G2/L14G3 are silicon phototransistors mounted in a narrow angle, TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300307 6/01/01 1 OF 4 www.fairchildsemi.com
1
EMITTER
(CONNECTED T O CASE)
COLLECTOR
3
BASE 2
SCHEMATIC
HERMETIC SILICON PHOTOTRANSISTOR
L14G1 L14G2 L14G3
www.fairchildsemi.com 2 OF 4 6/01/01 DS300307
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BV CEO 45 — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BV EBO 5.0 — V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BVCBO 45 — V
Collector-Emitter Leakage VCE = 10 V, Ee = 0 ICEO — 100 nA
Reception Angle at 1/2 Sensitivity θ±10 Degrees
On-State Collector Current L14G1 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) IC(ON) 1.0 — mA
On-State Collector Current L14G2 Ee = 0.5 mW/cm2, VCE = 5 V(7,8)IC(ON) 0.5 mA
On-State Collector Current L14G3 Ee = 0.5 mW/cm2, VCE = 5 V(7,8)IC(ON) 2.0 mA
Turn-On Time IC= 2 mA, VCC = 10 V, RL=100 Ωton 8µs
Turn-Off Time IC= 2 mA, VCC = 10 V, RL=100 Ωtoff 7µs
Saturation Voltage IC= 1.0 mA, Ee= 3.0 mW/cm2(7,8) VCE(SAT) — 0.40 V
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C) (All measurements made under pulse conditions)
Parameter Symbol Rating Unit
Operating Temperature TOPR -65 to +125 °C
Storage Temperature TSTG -65 to +150 °C
Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
Collector to Emitter Breakdown Voltage VCEO 45 V
Collector to Base Breakdown Voltage VCBO 45 V
Emitter to Base Breakdwon Voltage VEBO 5V
Power Dissipation(TA= 25°C)(1) PD300 mW
Power Dissipation(TC= 25°C)(2) PD600 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
HERMETIC SILICON PHOTOTRANSISTOR
L14G1 L14G2 L14G3
Figure 1. Light Current vs. Collector to Emitter Voltage
.01
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
.01
1
.1
10
.1 1 10 100
IL, NORMALIZED LIGHT CURRENT
Figure 3. Normalized Light Current vs. Temperature
0.1 0
1
10
-50 50
IL, NORMALIZED LIGHT CURRENT
IL, NORMALIZED LIGHT CURRENT
100 150
Figure 2. Light Current vs. Temperature
.01
.1
.1
Ee - TOTAL IRRADIANCE IN mW/cm2
1
10
1
IL, NORMALIZED LIGHT CURRENT
ton and toff , NORMALIZED TURN ON AND TURN OFF TIMES
10 100
TA, TEMPERATURE (
°C)
TA, TEMPERATURE (
°C)
TA, TEMPERATURE (
°C)
IL, OUTPUT CURRENT (mA
)
NORMALIZED TO:
VCE = 5 V
Ee = 10 mW/cm2
TA = 25
°C
Figure 4. Switching Times vs. Output Current
.01
1
10
.1 1.0 10010
Ee = 2 mW/cm2
Ee = 5 mW/cm2
Ee = 10 mW/cm2
Ee = 1 mW/cm2
Ee = 20 mW/cm2
NORMALIZED TO:
Ee = 10 mW/cm2
VCE = 5 V
NORMALIZED TO:
VCE = 5 V
Ee = 10 mW/cm2
Figure 5. Dark Current and Temperature
106
0
1
.1
104
102
105
103
10
50 15075 100 125
ID, NORMALIZED DARK CURRENT
25
Figure 6. Normalized Light Current vs. Temperature
Both Emitter (LED 55B) and Detector
(L14G) at Same Temperature
.0
.2
.4
.6
.8
1.0
1.2
1.4
55 1535 5 25 6545 10585
NORMALIZED TO:
LED 55B INPUT = 10 mA
VCE = 10 V
IL = 100 µA
TA = 25
°C
NORMALIZED TO:
VCE = 10 V
IL = 2 mA
Ion = Ioff = 5 µsec
RL = 100 Ω
RL = 1 KΩ
RL = 100 Ω
RL = 10 Ω
NORMALIZED TO:
ID@ 25
°C
VCEO = 10 V
LED 55B L14G
DS300307 6/01/01 3 OF 4 www.fairchildsemi.com
HERMETIC SILICON PHOTOTRANSISTOR
L14G1 L14G2 L14G3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300307 6/01/01 4 OF 4 www.fairchildsemi.com
HERMETIC SILICON PHOTOTRANSISTOR
L14G1 L14G2 L14G3
