GIB2401 thru GIB2404
Vishay General Semiconductor
Document Number: 88633
Revision: 30-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 16 A
VRRM 50 V to 200 V
IFSM 125 A
trr 35 ns
VF0.895 V
TJ max. 150 °C
TO-263AB
PIN 1
PIN 2
K
HEATSINK
1
2
K
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GIB2401 GIB2402 GIB2403 GIB2404 UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Maximum average forward rectified current at TC = 125 °C IF(AV) 16 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 125 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C
GIB2401 thru GIB2404
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88633
Revision: 30-Aug-07
2
Note:
(1) Thermal resistance from junction to case per leg mounted on heatsink
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GIB2401 GIB2402 GIB2403 GIB2404 UNIT
Maximum instantaneous forward voltage
per diode
IF = 4 A
IF = 8 A
IF = 4 A
IF = 8 A
TJ = 25 °C
TJ = 25 °C
TJ = 100 °C
TJ = 100 °C
VF
0.900
0.975
0.800
0.895
V
Maximum DC reverse current per diode
at rated DC blocking voltage
TC = 25 °C
TC = 100 °C IR
50
150
5.0
500 µA
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 35 ns
Typical junction capacitance per diode 4 V, 1 MHz CJ 85 pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL GIB2401 GIB2402 GIB2403 GIB2404 UNIT
Typical thermal resistance per diode (1) RθJC 1.2 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB GIB2401-E3/45 1.35 45 50/tube Tube
TO-263AB GIB2401-E3/81 1.35 81 900/reel Tape and reel
TO-263AB GIB2401HE3/45 (1) 1.35 45 50/tube Tube
TO-263AB GIB2401HE3/81 (1) 1.35 81 900/reel Tape and reel
Figure 1. Maximum Forward Current Derating Curve
0
0
12
16
20
755025 100 125 150
Average Forward Rectified Current (A)
Case Temperature (°C)
8
4
Resistive or Inductive Load
Infinite Heatsink, T
C
Ambient Air Rating, T
A
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
0
25
50
75
150
125
100
1 10010
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
C
= 125 °C
8.3 ms Single Half Sine-Wave
GIB2401 thru GIB2404
Vishay General Semiconductor
Document Number: 88633
Revision: 30-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.2 0.4 0.6 0.81.0 1.2 1.4 1.6
0.01
0.1
10
1
100
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TJ = 125 °C TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
6040200 10080
0.01
0.1
10
1
100
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
Figure 5. Typical Junction Capacitance Per Diode
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
100
1000
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TO-263AB
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) MIN.
0.33 (8.38) MIN.
0.42 (10.66) MIN.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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