3469674 FAIRCHILD SEMICONDUCTOR &4 DE i J4UB9674 o0274805 a J rE 2N6761/2N6762 BAIR CHILD N-Channel Power MOSFETs, A Schlumberger Company 45 A, 450 V/500 V T-39-11 . i Power And Discrete Division Description TO-204AA These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed 8 applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid rivers. Ves Rated at +20 V 7 S @ Silicon Gate for Fast Switching Speeds rsp0020e Ipss, Rps(on; SOA and Vestn) Specified at Elevated T 2N6761 } emperature 2N6762 Rugged Maximum Ratings R Rating Rating i Symbol! Characteristic 2N6762 2N6761 Unit z Voss Drain to Source Voltage 500 450 Vv ~ Voar Drain to Gate Voltage 500 450 v Res = 1.0 MQ = Vas Gate to Source Voltage +20 20 v TJ: Tstg | Operating Junction and -55 to +150 -55 to +150 oe; Storage Temperatures Th Maximum Lead Temperature 300 300 es for Soldering Purposes, 1/16 From Case for 10 s Maximum On-State Characteristics Rpsten) | Static Drain-to-Source 1.5 2.0 2 On Resistance Ip Drain Current A Continuous at Tc = 25C 4.5 4.0 Continuous at To. = 100C 3.0 2.5 lpm Pulsed 7.07 6.07 Maximum Thermal Characteristics Raic Thermal Resistance, 1.67 1.67 C/W Junction to Case Pp Total Power Dissipation Ww : at To = 25C 75 75 i at To = 100C 30 30 : Linear Derating Factor 0.6 0.6 W/C Notes All values are JEDEC registered except as noted. For information concerning connection diagram and package outine, refer to Section 7.3469674 FAIRCHILD SEMICONDUCTOR gy pe Bl syoan7y Oo27806b g T 2N6761/2N6762 T-39-11 Electrical Characteristics (Tc = 25C unless otherwise noted) Symbol! Characteristic | Min | Max Unit | Test Conditions Off Characteristics Vierjoss | Drain Source Breakdown Voltage! Vv Vas =0 V, Ip=4 mA 2N6762 500? 2N6761 4502 loss Zero Gate Voltage Drain Current 1 mA Vps = Rated Voss, Vag = 0 V 4 Vps = 0.8 x Rated Vpss, Vag =0 V, To = 125C lass Gate-Body Leakage Current +100 nA Ves = +20 V, Vps =0 V On Characteristics : Vest Gate Threshold Voltage 2.0 4.0 Vv Ip = 1.0 mA, Vps = Ves Rps(on) Static Drain-Source On-Resistance Q Ves =10 V 2N6762 1.6 Ip=3.0A 2N6761 2.0 Ip=2.5A : 2N6762 3.3 Ip=3.0 A, To = 126C 2N6764 4.4 Ip=2.5 A, To= 125C Vpsjon) | Drain-Source On-Voltage' Vv Ves = 10 V 2N6762 7.7 Ip=4.5 A | 2N6761 8.0 ID=40A Gis Forward Transconductance! 2.5 7.5 S @) Vos = 15 V, Ip=3.0 A Dynamic Characteristics Ciss Input Capacitance 350 800 pF Vos = 25 V, Vas =0 V Cass Output Capacitance 25 200 pF i= 1.0 MHz Cres Reverse Transfer Capacitance 16 60 pF Switching Characteristics (Tc = 25C, Figures 9, 10) turon) Turn-On Delay Time 30 ns Vop = 225 V, Ip =3.0 A t Rise Time 30 ns no. is % Raen= 2 tuvott Turn-Off Delay Time 55 ns ty Fall Time 30 ns Qg Total Gate Charge 30? nc Ves = 10 V, Ip=7.0 A Vop = 180 V 2-19a _ UTES Soe - ee 3469674 FAIRCHILD SEMICONDUCTOR 4&4 pe J sueaezy o027a07 1 I 2N6761/2N6762 J-39-11 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted} Symbol | Characteristic | Min Typ | Max | Unit Test Conditions Source-Drain Diode Characteristics Is Continuous Source Current A 2N6762 45 2N6761 4.0 Igu Pulsed Source Current A 2N6762 7.0 2N6761 6.0 Vsp Diode Forward Voltage Vv Ves =0 V 2N6762 0.7 1.4 Ig=4.5 A 2N6761 0.65 1.3 Is =4.0 A ty Reverse Recovery Time 5202 ns Vas =0 V, Ty = 150C le =|gu, dig/dt = 100 A/uS Qrr Reverse Recovery Charge 7.07 uC Vas =0 V, Ty = 150C Ip =Igy. die/dt = 100 A/ps Notes 1. Pulse test: Pulse width <300 ys, Duty cycle <1% 2. Non-JEDEC registered value. Typical Performance Curves Figure 2 Static Drain to Source Resistance Figure 1 Output Characteristics vs Drain Current a Ves = 8.0V RESISTANCE 2 IpDRAINCURRENTA Rps(onySTATIC DRAIN TO SOURCE 9 4 8 12 16 20 0 2 4 6 a 10 Vog DRAIN TO SOURCE VOLTAGEV toDRAIN CURRENTA PC107908 PGIOSOCF 2-20rem _ 3469674 FAIRCHILD SEMICONDUCTOR 44 ve ff syecn74 O02780a8 3 2N6761/2N6762 T~39-11 Typical Performance Curves (Cont.) Figure 3 Transfer Characteristics 7 Vos = 10V 5 Ip DRAIN CURRENTA 4 2 a 4 5 6 7 8 VosGATE TO SOURCE VOLTAGEV PC10810F Figure 5 Capacitance vs Drain to Source Voltage 1000 Vas =0V = 1.0 Ty = 28 800 e a 4 2 5 & 400 oe ! o 8 6 10 2 50 Vos~DRAIN TO SOURCE VOLTAGEV PC toasor Figure 7 Forward Biased Safe Operating Area 40! 10 ps 5 THIS AREA BE Rosion) foDRAIN CURRENTA 3 To = Ty< 150C 2} SINGLE PULSE == CURRENT LIMITED 10-1 10802 5 10? 2 5 103 VosDRAIN TO SOURCE VOLTAGEV C15 1OF Figure 4 Temperature Variation of Gate to Source Threshold Voltage NORMALIZED GATE THRESHOLD VOLTAGE -50 Qa 50 400 150 T,- JUNCTION TEMPERATUREC Poose41F Figure 6 Gate to Source Voltage vs Total Gate Charge VasGQATE TO SOURCE VOLTAGE-V o 8 16 24 32 40 QgTOTAL GATE CHARGEnc Poressar Figure 8 Transient Thermal Resistance vs Time 10" Zthy- TRANSIENT THERMAL RESIS TANCE*C/W 3 Pu 4 1 thie | Duty Fatton D = + 2 D curves apply to train of heating pulses Tamax) = To + Pus 10-1 a " 10-1 10 10" w 103 104 tTIMEms Poues7ar 2-21Ce 2 ae rg B4 DEB S4b9674 CO27804 i - 3469674 FAIRCHILD SEMICONDUCTOR 84D 27809 Dy, 2N6761/2N6762 | T-39-1] Typical Electrical Characteristics Figure 9 Switching Test Circuit Figure 10 Switching Waveforms oF pprmapeeenyr vin Vop ~| ton) ~>4 x RL E PULSE GENERATOR Your OUTPUT Vour INVERTED DUT 90% INPUT. Vin 50% 50% 10% L PULSE WIDTH ~ CROASOF WFOOEOOF = 2 2-22