06/2005
AWT6251
PCS/WCDMA 3.4V/27.5 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
Figure 1: Block Diagram
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.5 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50 Ω
system.
FEATURES
•InGaP HBT Technology
•High Efficiency: 38%
•Low Quiescent Current: 50 mA
•Low Leakage Current in Shutdown Mode: <1 µA
•VREF = +2.85 V (+2.75 V min over temp)
•Optimized for a 50 Ω System
•Low Profile Miniature Surface Mount Package:
1.56 mm Max
•RoHS Compliant Package Option, 250 oC MSL-3
APPLICATIONS
•Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6251 meets the increasing demands for
higher output power in 3GPP handsets. The PA module
is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
AWT6251
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND