Rev.1 May 24, 2007 page 1 of 4
HL8340MG
GaAlAs Laser Diode ODE-208-067A (Z)
Rev.1
May 24, 2007
Description
The HL8340MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a
light source for sensor applications and various other types of optical equipment.
Features
• Infrared light output: λp = 852 nm Typ
• Optical output power: 50 mW (CW)
• Low operating current: 75 mA Typ
• Low operating voltage: 1.9 V Typ
• Built-in monitor photodio de
• Single longitudinal mode
LDPD
13
Internal Circuit
Package Type
• HL8340MG: MG
2
Absolute Maximum Ratings
(TC = 25°C)
Item Symbol Ratings Unit
Optical output power PO 50 mW
LD reverse voltage VR(LD) 2 V
PD reverse voltage VR(PD) 30 V
Operating temperature Topr –10 to +60 °C
Storage temperature Tstg –40 to +85 °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Threshold current Ith — 20 40 mA —
Slope efficiency ηs 0.7 0.9 — mW/mA 30 (mW)/(I(40mW) – I(10mW))
Operating current IOP — 75 100 mA PO = 50 mW
Operating voltage VOP — 1.9 2.0 V PO = 50 mW
Beam divergence
parallel to the junction θ// 6 9 12 ° PO = 50 mW, FWHM
Beam divergence
perpendicular to the junction θ⊥ 18 22 26 ° PO = 50 mW, FWHM
Lasing wavelength λp 842 852 862 nm PO = 50 mW
Monitor current IS — 0.25 — mA PO = 50 mW, VR(PD) = 5 V
HL8340MG
Rev.1 May 24, 2007 page 2 of 4
Typical Characteristic Curves
Slope Efficiency vs. Case Temperature
Case temperature, TC (°C)
060
50
30
20
Slope efficiency, ηs (mW/mA)
0
0.2
0.4
0.6
0.8
1.2
Optical output power, PO (mW)
60
30
10
00100
Forward current, IF (mA)
Opticai Output Power vs. Forward Current
60
20
40
20
40 80
Monitor Current vs. Case Temperature
020 50
30
Monitor current, IS (mA)
0
0.4
60
Case temperature, TC (°C)
0.6
Lasing Wavelength vs. Case Temperature
Lasing wavelength, λp (nm)
835
840
860
865
850
020 50
40 60
Case temperature, TC (°C)
PO = 50mW
1.0
0.2
PO = 50mW
VR(PD) = 5V
Relative intensity
Angle, θ ( ° )
Far Feild Pattern
–40 –10 0 10 20 30–20–30 40
1.0
0.8
0.6
0.4
0.2
0
PO = 50mW
TC = 25°C
Perpendicular
Parallel
50
0.8
855
845
TC = 0°C
25°C
60°C
10 40
10 30
10 40
Case temperature, TC (°C)
060
40
20
100
10
Threshold current, Ith (mA)
Threshold Current vs. Case Temperature
10 50
30
HL8340MG
Rev.1 May 24, 2007 page 3 of 4
Package Dimensions
OPJ Code
JEDEC
JEITA
Mass
(reference value)
LD/MG
—
—
0.3 g
1
2
3
5.6 +0
–0.025
φ
1.0 ± 0.1
(0.4)
(90˚)
1.6 ± 0.2
φ
0.4 +0.1
–0
φ
φ4.1 ± 0.3
3.55 ± 0.1
0.25
Glass
1.27
φ
3 – 0.45 ± 0.1
6.5 ± 1.0
1.2 ± 0.1 2.3 ± 0.2
φ
123
2.0 ± 0.2
Emitting Point
As of July, 2002
Unit: mm
HL8340MG
Rev.1 May 24, 2007 page 4 of 4
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants lice nses of any our rights or any third part y’s pa t ent, copyright,
trademark, or other intellectual prop erty rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportatio n, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no respo nsibility for failure or damage when used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
expe riments, when you handle the prod uct.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan
Tel: (03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan.
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