TGF2961-SD
Primary Applications
Key Features
900 MHz Application Board
Performance
1 Watt DC-4 GHz Packaged HFET
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
•Frequency Range: DC-4 GHz
Nominal 900 MHz Application Board Performance:
•TOI: 44 dBm
•31 dBm Psat, 30 dBm P1dB
•Gain: 18 dB
•Input Return Loss: -15 dB
•Output Return Loss: -7 dB
•Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V
(Typical)
•Package Dimensions: 4.5 x 4 x 1.5 mm
•Cellular Base Stations
•WiMAX
•Wireless Infrastructure
•
IF & LO Buffer Applications
20
15
20
1
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Datasheet subject to change without notice.
Product Description
•
IF & LO Buffer Applications
•RFID
The TGF2961-SD is a high performance 1-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The device’s ideal operating point is at a drain bias
of 8 V and 200 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 18 dB of gain, 30 dBm of
saturated output power, and 44 dBm of output IP3
Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.
RoHS and Lead-Free compliant
29
30
31
0.86
0.87
0.88
0.89
0.9
0.91
0.92
0.93
0.94
0.95
0.96
0.97
Freq (GHz)
Psat (dBm)
5
10
15
0.6 0.7 0.8 0.9 1 1.1 1.2
Frequency (GHz)
Gain (dB)
-20
-15
-10
-5
0
5
10
15
IRL and ORL (dB)
Gain
IRL
ORL
TGF2961-SD
Table I
Absolute Maximum Ratings 1/
Symbol Parameter Value Notes
Vd-Vg Drain to Gate Voltage 17 V
Vd Drain Voltage 9 V 2/
Vg Gate Voltage Range -5 to 0 V
Id Drain Current 780 mA 2/
Ig Gate Current Range -2.4 to 17.8 mA
Pin Input Continuous Wave Power 29 dBm 2/
Tchannel Channel Temperature 200 °C
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
2
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Table II
Recommended Operating Conditions
maximum power dissipation listed in Table IV.
Symbol Parameter 1/ Typical Value
Vd Drain Voltage 8 V
Idq Drain Current 200 mA
Id Drain Current at Psat 260 mA
Vg Gate Voltage -1.0 V
1/ See assembly diagram for bias instructions.
TGF2961-SD
Table III
Electrical Performance
Test conditions unless otherwise specified: fin = 900 MHz, 25°C; Vd = 8V, Idq = 200
mA, Vg = -1.0 Typical; See test circuit for 900 MHz operation
1/ 900 and 910 MHz, 18 dBm output power per tone
SYMBOL PARAMETER Min Nom UNIT
Gain Small Signal Gain 19 20 dB
P1dB Output Power @ 1dB Compression 29.0 30.5 dBm
OTOI 3rd Order Output Intercept Point 1/ 39.5 42.5 dBm
3
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TGF2961-SD
Table IIIa
RF Characterization Table
SYMBOL PARAMETER TEST CONDITIONS NOMINAL UNITS NOTES
Gain Small Signal Gain 900 MHz
1900 MHz
2100 MHz
20
15
15
dB 1/
2/
3/
IRL Input Return Loss 900 MHz
1900 MHz
2100 MHz
-15
-15
-15
dB 1/
2/
3/
ORL Output Return Loss 900 MHz
1900 MHz
2100 MHz
-6
-6
-6
dB 1/
2/
3/
Psat Saturated Output
Power
900 MHz
1900 MHz
2100 MHz
31
31
31
dBm 1/
2/
3/
P1dB
Output Power @ 1dB
900 MHz
30.5
dBm
1/
Bias: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V, typical
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P1dB
Output Power @ 1dB
Compression
900 MHz
1900 MHz
2100 MHz
30.5
30
30
dBm
1/
2/
3/
TOI Output TOI 900 MHz
1900 MHz
2100 MHz
42.5
42.5
42.5
dBm 1/
2/
3/
NF Noise Figure 900 MHz
1900 MHz
2100 MHz
3.3
4.3
4.3
dB 1/
2/
3/
1/ Using 900 MHz Application Board.
2/ Using 1900 MHz Application Board
3/ Using 2100 MHz Application Board
TGF2961-SD
Table IV
Power Dissipation and Thermal Properties
Parameter Test Conditions Value Notes
Maximum Power Dissipation Tbaseplate = 70°C Pd = 2.7 W
Tchannel = 175°C
Tm = 8.7E+06 Hrs
1/ 2/
Thermal Resistance, θjc Vd = 8 V
Id = 200 mA
Pd = 1.6 W
Tbaseplate = 85°C
θjc = 39 (°C/W)
Tchannel = 147°C
Tm = 1.86E+08 Hrs
Thermal Resistance, θjc
Under RF Drive
Vd = 8 V
Id = 260 mA
Pout = 30 dBm
Pd = 1.08 W
Tbaseplate = 85°C
θjc = 39 (°C/W)
Tchannel = 127°C
Tm = 2.27E+09 Hrs
Mounting Temperature See ‘Typical Solder Reflow Profiles’ Table
Storage Temperature -65 to 150°C
5
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1/ For a median life of 8.7E6 hours, Power Dissipation is limited to
Pd(max) = (175°C – Tbase°C) / θjc
2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
Power De-Rating Curve
TGF2961-SD
5
10
15
20
25
30
35
Gmax and MSG - dB
0.5
1.0
1.5
2.0
2.5
3.0
3.5
K factor
Gmax
Max Stable Gain
K factor
Gmax, Max Stable Gain, K factor
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
6
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0
0 1 2 3 4 5 6 7
Freq (GHz)
0.0
TGF2961-SD
Measured Data 900 MHz Application Board
Bias conditions: Vd = 8 V, Id = 200 mA, Vg = -1.0 V Typical
10
15
20
25
0.6 0.7 0.8 0.9 1 1.1 1.2
Frequency (GHz)
Gain (dB)
7
September 2010 © Rev B
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Frequency (GHz)
-30
-25
-20
-15
-10
-5
0
0.6 0.7 0.8 0.9 1 1.1 1.2
Frequency (GHz)
IRL and ORL (dB)
IRL ORL
TGF2961-SD
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
28
29
30
31
0.86
0.88
0.90
0.92
0.94
Freq (GHz)
P1dB (dBm)
-40 deg C
25 deg C
85 deg C
Measured Data 900 MHz Application Board
8
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Freq (GHz)
29
30
31
32
0.82
0.84
0.86
0.88
0.90
0.92
0.94
0.96
0.98
1.00
Freq (GHz)
Psat (dBm)
-40 deg C
+25 deg C
+85 deg C
TGF2961-SD
Measured Data 900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
43
44
45
46
0.86
0.87
0.88
0.89
0.9
0.91
0.92
0.93
0.94
0.95
0.96
0.97
Freq(GHz)
OIP3(dBm)
9
September 2010 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Freq(GHz)
TGF2961-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
5
10
15
20
1.7 1.8 1.9 2 2.1 2.2 2.3
Gain (dB)
10
September 2010 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Frequency (GHz)
-30
-25
-20
-15
-10
-5
0
1.7 1.8 1.9 2 2.1 2.2 2.3
Frequency (GHz)
IRL and ORL (dB)
IRL ORL
TGF2961-SD
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
Measured Data 1900 MHz Application Board
28
29
30
31
1.92
1.93
1.94
1.95
1.96
1.97
1.98
1.99
2.00
Freq (GHz)
P1dB (dBm)
-40 deg C
25 deg C
85 deg C
11
September 2010 © Rev B
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Freq (GHz)
29
30
31
32
1.88
1.90
1.92
1.94
1.96
1.98
2.00
2.02
2.04
Freq (GHz)
Psat (dBm)
-40 deg C
+25 deg C
+85 deg C
TGF2961-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
43
44
45
46
1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00
Freq(GHz)
OIP3(dBm)
12
September 2010 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Freq(GHz)
TGF2961-SD
Measured Data 2100 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
5
10
15
20
1.9 2 2.1 2.2 2.3 2.4 2.5
Frequency (GHz)
Gain (dB)
13
September 2010 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Frequency (GHz)
-30
-25
-20
-15
-10
-5
0
1.9 2 2.1 2.2 2.3 2.4 2.5
Frequency (GHz)
IRL and ORL (dB)
IRL
ORL
TGF2961-SD
Bias conditions: Vd = 8 V, Id = 200 mA, Vg = -1.0 V Typical
Measured Data 2100 MHz Application Board
28
29
30
31
2.06
2.08
2.10
2.12
2.14
2.16
2.18
2.20
2.22
Freq (GHz)
P1dB (dBm)
-40 deg C
25 deg C
85 deg C
14
September 2010 © Rev B
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Freq (GHz)
29
30
31
32
2.06
2.08
2.10
2.12
2.14
2.16
2.18
2.20
2.22
Freq (GHz)
Psat (dBm)
-40 deg C
+25 deg C
+85 deg C
TGF2961-SD
Measured Data 2100 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
43
44
45
46
2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18
Freq(GHz)
OIP3 (dBm)
15
September 2010 © Rev B
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Freq(GHz)
TGF2961-SD
Electrical Schematic
123
2
Pin Signal
1 RF In (Gate)
2 Gnd (Source)
3 RF Out (Drain)
16
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Bias Procedures
Bias-up Procedure
Vg set to -2.5 V
Vd set to +8 V
Adjust Vg more positive until Idq is 200 mA. This will be ~ Vg = -1.0 V
Apply RF signal to input
Bias-down Procedure
Turn off RF signal at input
Reduce Vg to -2.5V. Ensure Id ~ 0 mA
Turn Vd to 0 V
Turn Vg to 0 V
TGF2961-SD
Mechanical Drawing
A
B
C
D
E
F
G
H
JJ
I
K
123
2
3
2
1
Millimeters
17
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Dim
Millimeters
Min Max
A 1.40 1.60
B 4.40 4.60
C 2.29 2.60
D 3.94 4.25
E 3.00 Center-Center
F 1.50 Center-Center
G 0.35 0.44
H 0.89 1.20
I 0.44 0.56
J 0.36 0.48
K 1.50 1.83
TGF2961-SD
Evaluation Board
L2 R1
L1 R2
C1
C3 C4
Q1
RF OUT
C2
L3
RF IN
Vg Vd
Gnd
C5
C7
C9
C10
C8
C6
D /
λ
Evaluation Board
18
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Evaluation Board Schematic
Q1 D /
λ
R2
L1
C3
C6 C10
C8 C5
Vd
Vg
RF IN
C4 RF OUT
C2
C1
C7 C9
L3
L2
R1
Z = 50
Ω
0
Z = 50
Ω
0
TGF2961-SD
Ref Des Value for Freq (MHz) Description
900 1900 2100
L1 5.6 nH 1.2 nH 1.2 nH 0603 ACCU-L AVX Inductor
C1 8.2 pF 1.2 pF 0.9 pF 0603 ACCU-P AVX Capacitor
C2 1.8 pF 1.2 pF 1.2 pF 0603 ACCU-P AVX Capacitor
D 18.8 mm 8.0 mm 5.2 mm Physical Location for C2
λ
λλ
λ36o@0.9
GHz
33o@1.9
GHz
23o@2.1
GHz 50 Ohm Transmission Line Length D
L2, L3
50 nH
0805 Inductor
Evaluation Board Bill of Materials
19
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
L2, L3
50 nH
0805 Inductor
C3,C4 150 pF 0603 Capacitor
C5, C6 0.1 µ
µµ
µF 0603 Capacitor
C7, C8 0.01 µ
µµ
µF 0603 Capacitor
C9, C10 1000 pF 0603 Capacitor
R1 50 Ohm 0805 1/8 Watt Resistor
R2 3 Ohm 0805 1/8 Watt Resistor
Q1 -- TriQuint TGF2961-SD Packaged FET
(PCB) -- 28 mil thick GETEK
TGF2961-SD
Recommended Assembly Diagram
2.6 mm Ø CLEARANCE HOLE
FOR 2-56 SOCKET HEAD CAP SCREW (2/)
4.6 mm Ø SOLDERMASK
KEEPOUT FOR 2-56 LOCKWASHER (4/)
SOT-89 PACKAGE OUTLINE
ARRAY OF VIAS (1/)
7.6 X 7.6 mm COPPER AREA (3/)
1 2 3
20
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1/ The lowest possible thermal and electrical resistance for Pin 2 is critical for optimal performance. The array
of vias under Pin 2 should be as small and as dense as the PC board fabrication permits. 0.30 mm diameter
vias on 0.60 mm center to center spacing is recommended.
2/ Mounting screws in the vicinity of the package improve heat transfer to the chassis or to a heat spreader
located on the backside of the PC board. Shown are clearance holes and solder mask keepout zone for a 2-
56 socket head cap screw. Use of a split lockwasher and proper torque on the screw will prevent
compression damage to the PC board.
3/ Use of 1 oz copper (min) in the PC board construction is recommended.
4/ For lowest thermal resistance, solder mask must be removed where the copper traces on the PC board
contact the heat spreader. In this example, this would be a) front and backsides of the PC board around the
2-56 screw and b) front of the PC board around package pin 2.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Assembly Notes
TGF2961-SD
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile SnPb Pb Free
Ramp-up Rate 3 °C/sec 3 °C/sec
Activation Time and
60 – 120 sec @ 140 – 160
°
C
60 – 180 sec @ 150 – 200
°
C
21
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Ordering Information
Part Package Style
TGF2961-SD, TAPE AND REEL SOT-89, TAPE AND REEL
Activation Time and
Temperature
60 – 120 sec @ 140 – 160
°
C
60 – 180 sec @ 150 – 200
°
C
Time above Melting Point 60 – 150 sec 60 – 150 sec
Max Peak Temperature 240 °C 260 °C
Time within 5 °C of Peak
Temperature 10 – 20 sec 10 – 20 sec
Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec
