TGF2961-SD 1 Watt DC-4 GHz Packaged HFET Key Features * Frequency Range: DC-4 GHz Nominal 900 MHz Application Board Performance: * TOI: 44 dBm * 31 dBm Psat, 30 dBm P1dB * Gain: 18 dB * Input Return Loss: -15 dB * Output Return Loss: -7 dB * Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V (Typical) * Package Dimensions: 4.5 x 4 x 1.5 mm 900 MHz Application Board Performance Primary Applications Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 20 20 Gain (dB) 10 15 5 Gain IRL 0 ORL -5 10 -10 -15 5 -20 0.6 0.7 0.8 0.9 1 1.1 1.2 Cellular Base Stations WiMAX Wireless Infrastructure IF & LO Buffer Applications RFID Product Description The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package. The device's ideal operating point is at a drain bias of 8 V and 200 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 18 dB of gain, 30 dBm of saturated output power, and 44 dBm of output IP3 Frequency (GHz) 31 Evaluation boards at 900 MHz, 1900 MHz and 2100 MHz available on request. 30 RoHS and Lead-Free compliant 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 0.89 0.88 0.87 29 0.86 Psat (dBm) IRL and ORL (dB) 15 * * * * * Freq (GHz) Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B 1 Table I Absolute Maximum Ratings 1/ Symbol Parameter Vd-Vg TGF2961-SD Value Notes Drain to Gate Voltage 17 V Vd Drain Voltage 9V Vg Gate Voltage Range -5 to 0 V Id Drain Current 780 mA Ig Gate Current Range Pin Tchannel 2/ 2/ -2.4 to 17.8 mA Input Continuous Wave Power 29 dBm Channel Temperature 200 C 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol 1/ Parameter 1/ Typical Value Vd Drain Voltage 8V Idq Drain Current 200 mA Id Drain Current at Psat 260 mA Vg Gate Voltage -1.0 V See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Table III Electrical Performance Test conditions unless otherwise specified: fin = 900 MHz, 25C; Vd = 8V, Idq = 200 mA, Vg = -1.0 Typical; See test circuit for 900 MHz operation SYMBOL PARAMETER Min Nom UNIT 19 20 dB Gain Small Signal Gain P1dB Output Power @ 1dB Compression 29.0 30.5 dBm OTOI 3rd Order Output Intercept Point 1/ 39.5 42.5 dBm 1/ 900 and 910 MHz, 18 dBm output power per tone 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Table IIIa RF Characterization Table Bias: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V, typical SYMBOL PARAMETER TEST CONDITIONS NOMINAL UNITS NOTES Gain Small Signal Gain 900 MHz 1900 MHz 2100 MHz 20 15 15 dB 1/ 2/ 3/ IRL Input Return Loss 900 MHz 1900 MHz 2100 MHz -15 -15 -15 dB 1/ 2/ 3/ ORL Output Return Loss 900 MHz 1900 MHz 2100 MHz -6 -6 -6 dB 1/ 2/ 3/ Psat Saturated Output Power 900 MHz 1900 MHz 2100 MHz 31 31 31 dBm 1/ 2/ 3/ P1dB Output Power @ 1dB Compression 900 MHz 1900 MHz 2100 MHz 30.5 30 30 dBm 1/ 2/ 3/ TOI Output TOI 900 MHz 1900 MHz 2100 MHz 42.5 42.5 42.5 dBm 1/ 2/ 3/ NF Noise Figure 900 MHz 1900 MHz 2100 MHz 3.3 4.3 4.3 dB 1/ 2/ 3/ 1/ Using 900 MHz Application Board. 2/ Using 1900 MHz Application Board 3/ Using 2100 MHz Application Board 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Notes 1/ 2/ Maximum Power Dissipation Tbaseplate = 70C Pd = 2.7 W Tchannel = 175C Tm = 8.7E+06 Hrs Thermal Resistance, jc Vd = 8 V Id = 200 mA Pd = 1.6 W Tbaseplate = 85C jc = 39 (C/W) Tchannel = 147C Tm = 1.86E+08 Hrs Thermal Resistance, jc Under RF Drive Vd = 8 V Id = 260 mA Pout = 30 dBm Pd = 1.08 W Tbaseplate = 85C jc = 39 (C/W) Tchannel = 127C Tm = 2.27E+09 Hrs Mounting Temperature See `Typical Solder Reflow Profiles' Table Storage Temperature 1/ -65 to 150C For a median life of 8.7E6 hours, Power Dissipation is limited to Pd(max) = (175C - TbaseC) / jc 2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Power De-Rating Curve 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Gmax, Max Stable Gain, K factor Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 35 3.5 Gmax Max Stable Gain K factor 25 3.0 2.5 20 2.0 15 1.5 10 1.0 5 0.5 0 0.0 0 1 2 3 4 5 6 K factor Gmax and MSG - dB 30 7 Freq (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Measured Data 900 MHz Application Board Bias conditions: Vd = 8 V, Id = 200 mA, Vg = -1.0 V Typical Gain (dB) 25 20 15 10 0.6 0.7 0.8 0.9 1 1.1 1.2 1.1 1.2 Frequency (GHz) 0 IRL and ORL (dB) -5 -10 -15 -20 IRL -25 ORL -30 0.6 0.7 0.8 0.9 1 Frequency (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Measured Data 900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical P1dB (dBm) 31 30 29 -40 deg C 25 deg C 85 deg C 0.94 0.92 0.90 0.88 0.86 28 Freq (GHz) Psat (dBm) 32 31 30 -40 deg C +25 deg C +85 deg C 1.00 0.98 0.96 0.94 0.92 0.90 0.88 0.86 0.84 0.82 29 Freq (GHz) 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Measured Data 900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 45 44 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 0.89 0.88 0.87 43 0.86 OIP3(dBm) 46 Freq(GHz) 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Measured Data 1900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical Gain (dB) 20 15 10 5 1.7 1.8 1.9 2 2.1 2.2 2.3 Frequency (GHz) 0 IRL and ORL (dB) -5 -10 -15 IRL -20 ORL -25 -30 1.7 1.8 1.9 2 2.1 2.2 2.3 Frequency (GHz) 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Measured Data 1900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical P1dB (dBm) 31 30 29 -40 deg C 25 deg C 85 deg C 1.98 1.99 2.00 2.00 2.02 2.04 1.97 1.96 1.95 1.94 1.93 1.92 28 Freq (GHz) Psat (dBm) 32 31 30 -40 deg C +25 deg C +85 deg C 1.98 1.96 1.94 1.92 1.90 1.88 29 Freq (GHz) 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Measured Data 1900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical OIP3(dBm) 46 45 44 43 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 Freq(GHz) 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Measured Data 2100 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical Gain (dB) 20 15 10 5 1.9 2 2.1 2.2 2.3 2.4 2.5 Frequency (GHz) 0 IRL and ORL (dB) -5 -10 IRL -15 ORL -20 -25 -30 1.9 2 2.1 2.2 2.3 2.4 2.5 Frequency (GHz) 13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Measured Data 2100 MHz Application Board Bias conditions: Vd = 8 V, Id = 200 mA, Vg = -1.0 V Typical P1dB (dBm) 31 30 29 -40 deg C 25 deg C 85 deg C 2.18 2.20 2.22 2.18 2.20 2.22 2.16 2.14 2.12 2.10 2.08 2.06 28 Freq (GHz) Psat (dBm) 32 31 30 -40 deg C +25 deg C +85 deg C 2.16 2.14 2.12 2.10 2.08 2.06 29 Freq (GHz) 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Measured Data 2100 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical OIP3 (dBm) 46 45 44 43 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 Freq(GHz) 15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Electrical Schematic 2 1 2 3 Pin Signal 1 RF In (Gate) 2 Gnd (Source) 3 RF Out (Drain) Bias Procedures Bias-up Procedure Vg set to -2.5 V Vd set to +8 V Adjust Vg more positive until Idq is 200 mA. This will be ~ Vg = -1.0 V Apply RF signal to input Bias-down Procedure Turn off RF signal at input Reduce Vg to -2.5V. Ensure Id ~ 0 mA Turn Vd to 0 V Turn Vg to 0 V 16 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Mechanical Drawing B K 2 2 C D 1 J 2 H 3 I 3 1 G J F A E Dim Millimeters Min Max A 1.40 1.60 B 4.40 4.60 C 2.29 2.60 D 3.94 4.25 E 3.00 Center-Center F 1.50 Center-Center G 0.35 0.44 H 0.89 1.20 I 0.44 0.56 J 0.36 0.48 K 1.50 1.83 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 17 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Evaluation Board Evaluation Board L2 R1 Gnd Vg Vd L3 C5 C7 C9 C6 C8 C10 RF IN RF OUT C3 C1 R2 L1 D/ Q1 C2 C4 Evaluation Board Schematic Vg Vd C6 C8 C10 C5 C7 C9 R1 RF IN Z0 = 50 C3 L3 L2 Q1 L1 C1 D/ R2 C4 C2 RF OUT Z0 = 50 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 18 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Evaluation Board Bill of Materials Ref Des Value for Freq (MHz) Description 900 1900 2100 L1 5.6 nH 1.2 nH 1.2 nH 0603 ACCU-L AVX Inductor C1 8.2 pF 1.2 pF 0.9 pF 0603 ACCU-P AVX Capacitor C2 1.8 pF 1.2 pF 1.2 pF 0603 ACCU-P AVX Capacitor D 18.8 mm 8.0 mm 5.2 mm Physical Location for C2 36o@0.9 GHz 33o@1.9 GHz 23o@2.1 GHz 50 Ohm Transmission Line Length D L2, L3 50 nH 0805 Inductor C3,C4 150 pF 0603 Capacitor C5, C6 0.1 F 0603 Capacitor C7, C8 0.01 F 0603 Capacitor C9, C10 1000 pF 0603 Capacitor R1 50 Ohm 0805 1/8 Watt Resistor R2 3 Ohm 0805 1/8 Watt Resistor Q1 -- TriQuint TGF2961-SD Packaged FET (PCB) -- 28 mil thick GETEK GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 19 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Recommended Assembly Diagram 2.6 mm O CLEARANCE HOLE FOR 2-56 SOCKET HEAD CAP SCREW (2/) 7.6 X 7.6 mm COPPER AREA (3/) ARRAY OF VIAS (1/) 4.6 mm O SOLDERMASK SOT-89 PACKAGE OUTLINE KEEPOUT FOR 2-56 LOCKWASHER (4/) 1 2 3 Assembly Notes 1/ The lowest possible thermal and electrical resistance for Pin 2 is critical for optimal performance. The array of vias under Pin 2 should be as small and as dense as the PC board fabrication permits. 0.30 mm diameter vias on 0.60 mm center to center spacing is recommended. 2/ Mounting screws in the vicinity of the package improve heat transfer to the chassis or to a heat spreader located on the backside of the PC board. Shown are clearance holes and solder mask keepout zone for a 256 socket head cap screw. Use of a split lockwasher and proper torque on the screw will prevent compression damage to the PC board. 3/ Use of 1 oz copper (min) in the PC board construction is recommended. 4/ For lowest thermal resistance, solder mask must be removed where the copper traces on the PC board contact the heat spreader. In this example, this would be a) front and backsides of the PC board around the 2-56 screw and b) front of the PC board around package pin 2. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 20 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B TGF2961-SD Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 C/sec 3 C/sec Activation Time and Temperature 60 - 120 sec @ 140 - 160 C 60 - 180 sec @ 150 - 200 C Time above Melting Point 60 - 150 sec 60 - 150 sec Max Peak Temperature 240 C 260 C Time within 5 C of Peak Temperature 10 - 20 sec 10 - 20 sec Ramp-down Rate 4 - 6 C/sec 4 - 6 C/sec Ordering Information Part Package Style TGF2961-SD, TAPE AND REEL SOT-89, TAPE AND REEL 21 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com September 2010 (c) Rev B