All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 9 Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Inneon test xture)
VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 14.5 15.5 — dB
Drain Efciency hD 26 27.5 — %
Intermodulation Distortion IMD — –36 –34 dBc
Thermally-Enhanced High Power RF LDMOS FET
180 W, 2110 – 2170 MHz
Description
The PTFA211801E is a thermally-enhanced, 180-watt, internally
matched LDMOS FET intended for WCDMA applications. It is
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Manufactured with Inneon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efciency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 180 W
- Efciency = 52%
• Integrated ESD protection
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
• Pb-free and RoHS-compliant
PTFA211801E
Package H-36260-2
0
5
10
15
20
25
30
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
Average Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
ACPR
Efficiency
IM3
Data Sheet 2 of 9 Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
CW Measurements (tested in Inneon test xture)
VDD = 28 V, IDQ = 1.2 A, POUT = 150 W average, ƒ = 2170 MHz
Characteristic Symbol Min Typ Max Unit
Gain Compression Gcomp — 0.5 1.0 dB
Two-tone Measurements (not subject to production test—veried by design/characterization in Inneon test xture)
VDD = 28 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps — 15.5 — dB
Drain Efciency hD — 38.5 — %
Intermodulation Distortion IMD — –28 — dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W
Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 150 W CW) RqJC 0.31 °C/W
PTFA211801E
Confidential, Limited Internal Distribution
Data Sheet 3 of 9 Rev. 06, 2011-01-11
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFA211801E V5 H-36260-2 Thermally-enhanced slotted ange, single-ended Tray
PTFA211801E V5 R250 H-36260-2 Thermally-enhanced slotted ange, single-ended Tape & Reel
Typical Performance (data taken in a production test xture)
-30
-25
-20
-15
-10
-5
5
10
15
20
25
30
2070 2090 2110 2130 2150 2170 2190 2210
Input Return Loss (dB)
Frequency (MHz)
Broadband Performance
V
DD
= 28 V, I
DQ
= 1.2 A, P
OUT
= 45.0 dBm CW
Gain
Efficiency
Return Loss
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46 48
3rd Order IMD (dBc)
Output Power, Avg. (dBm)
Two-carrier WCDMA at Various Biases
1.2 A
1.4 A
1.1 A
1.3 A
V
DD
= 28 V, ƒ= 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show I
DQ
Data Sheet 4 of 9 Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Typical Performance (cont.)
8
21
34
47
60
13
14
15
16
17
0 20 40 60 80 100 120 140 160 180
Drain Efficiency (%)
Gain (dB)
Output Power (W)
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 1.2 A, ƒ = 2170 MHz
Gain
Efficiency
T
CA S E
= 25°C
T
CA S E
= 90°C
0
10
20
30
40
50
60
12
13
14
15
16
17
18
0 20 40 60 80 100 120 140 160 180
Gain (dB)
Output Power (W)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1.2 A, ƒ = 2170 MHz
Gain
Efficiency
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30 35 40
Intermodulation Distortion (dBc)
Tone Spacing (MHz)
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V I
DQ
= 1.2 A, ƒ= 2140 MHz,
P
OUT
= 51 dBm PEP
3rd Order
5th
7th
0
5
10
15
20
25
30
35
40
45
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
38 42 46 50 54
Drain Efficiency (%)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 28 V, I
DQ
= 1.2 A,
ƒ= 2140 MHz, tone spacing = 1 MHz
Intermodulation Distortion (dBc)
IM5
IM7
IM3
Efficiency
PTFA211801E
Confidential, Limited Internal Distribution
Data Sheet 5 of 9 Rev. 06, 2011-01-11
0.1
0.3
0.5
0.2
0.4
2
0.1
0.3
0
.5
0.7
0
.9
0.2
0.4
0.6
0.
8
1
0.1
0.3
0.5
0
.7
0
.9
0
.2
0.4
0
.6
0.
8
1
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
0
.05
0
.35
0
.40
0
.45
0
.0
5
0
.1
0
0
.1
5
0
.
3
5
0
.
4
0
0
.4
5
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Nornalized to 50 Ohms
a211801ef
ga211801ef Apr. 5, 2005 3:16:59 PM
Z Load
Z Source
2210 MHz
2210 MHz
2070 MHz
2070 MHz
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
2070 7.2 –0.5 1.5 2.3
2110 7.8 –0.2 1.4 2.6
2140 8.4 –0.0 1.4 2.8
2170 9.1 0.0 1.4 3.0
2210 10.0 –0.2 1.3 3.4
Typical Performance (cont.)
Z0 = 50 W
Z Source Z Load
G
S
D
0
5
10
15
20
25
30
35
-50
-45
-40
-35
-30
34 36 38 40 42 44 46 48
Drain Efficiency (%), Gain (dB)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
Adjacent Channel Power Ratio (dB)
Efficiency
Gain
ACPR Up
ACPR Low
10
15
20
25
30
35
40
45
-45
-40
-35
-30
-25
-20
-15
-10
23 24 25 26 27 28 29 30 31 32 33
3rd Order IMD (dBc)
Supply Voltage (V)
Voltage Sweep
I
DQ
= 1.2 A, ƒ= 2140 MHz, P
OUT
= 51 dBm PEP,
tone spacing = 1 MHz
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
Data Sheet 6 of 9 Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic for ƒ = 2140 MHz
Electrical Characteristics at 2140 MHz
Transmission Electrical Dimensions: L x W (mm) Dimensions: L x W (in.)
Line Characteristics
l1 0.097 l, 50.0 W 7.37 x 1.40 0.290 x 0.055
l2 0.267 l, 50.0 W 19.86 x 1.40 0.782 x 0.055
l3 0.136 l, 42.0 W 10.24 x 1.85 0.403 x 0.073
l4 0.087 l, 42.0 W 6.50 x 1.85 0.256 x 0.073
l5 0.018 l, 11.4 W 1.24 x 10.24 0.049 x 0.403
l6 0.077 l, 6.9 W 5.23 x 17.78 0.206 x 0.700
l7 0.207 l, 48.0 W 15.70 x 1.50 0.618 x 0.059
l8, l9 0.256 l, 45.0 W 19.30 x 1.65 0.760 x 0.065
l10 0.087 l, 5.0 W 5.84 x 25.40 0.230 x 1.000
l11 (taper) 0.073 l, 5.0 W / 40.0 W 5.59 x 25.40 / 1.98 0.220 x 1.000 / 0.078
l12 0.019 l, 40.0 W 1.45 x 1.98 0.057 x 0.078
l13 0.087 l, 50.0 W 6.65 x 1.40 0.262 x 0.055
l14 0.403 l, 50.0 W 30.73 x 1.40 1.210 x 0.055
A211801ef _sch
8.2pF
1µF
0.5pF
9.1pF 0.02µF 22µF1µF
l1l3l4l6
l8
l9
l10
DUT
C12 C13 C14 C15
C9
C19C18
C17
C16
l11
50V
l7
l2
0.1µF
C6
0.1µF
C5
R6
10µF
35V
C4 5.1K
R7 .01µF
C7 9.1pF
C8
C10
5.1K
l5
C11
R8
5.1K
10
R9
1.5pF
C21
8.2pF
l14l12
C20
0.3pF
l13
R5
10
0.02µF 22µF
50V
9.1pF
R3
2K R4
2K
C3
0.001µF
C2
0.001µF
BCP56
R2
1.3KR1
1.2K
LM7805
C1
0.001µF
QQ1
Q1 VDD
VDD
RF_OUT
RF_IN
PTFA211801E
Confidential, Limited Internal Distribution
Data Sheet 7 of 9 Rev. 06, 2011-01-11
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request
A211801ef _assy
10
35V
+
LM
RF_IN RF_OUT
Circuit Assembly Information
DUT PTFA211801E LDMOS Transistor
PCB 0.76 mm [.030"] thick, er = 4.5 Rogers TMM4 2 oz. copper
Component Description Suggested Manufacturer P/N
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5, C6 Capacitor, 0.1 µF Digi-Key PCC104BCT
C7 Capacitor, 0.01 µF ATC 200B103
C8, C12, C16 Ceramic capacitor, 9.1 pF ATC 100B 9R1
C9 Ceramic capacitor, 0.5 pF ATC 100B 0R5
C10, C21 Ceramic capacitor, 8.2 pF ATC 100B 8R2
C11 Ceramic capacitor, 1.5 pF ATC 100B 1R5
C13, C17 Ceramic capacitor, 0.02 µF ATC 200B 203
C14, C18 Ceramic capacitor, 1 µF ATC 920C105
C15, C19 Electrolytic capacitor, 22 µF, 50 V Digi-Key PCE3374CT-ND
C20 Ceramic capacitor, 0.3 pF ATC 100B 0R3
Q1 Transistor Inneon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.2 k W Digi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3 k W Digi-Key P1.3KGCT-ND
R3 Chip resistor, 2 k W Digi-Key P2KECT-ND
R4 Potentiometer, 2 k W Digi-Key 3224W-202ETR-ND
R5, R9 Chip resistor, 10 W Digi-Key P10ECT-ND
R6, R7, R8 Chip resistor, 5.1 k W Digi-Key P5.1KECT-ND
Data Sheet 8 of 9 Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Package Outline Specications
Package H-36260-2
Find the latest and most complete information about products and packaging at the Inneon Internet page
http://www.inneon.com/rfpower
23.37±0.51
[.920±.020]
13.72
[.540]
2X 12.70
[.500]
34.04
[1.340]
LID 22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
1.02
[.040]
C
L
L
C
D
G
S
L
C
45° X 2.031
45° X [.080]
4.83±0.50
[.190±.020]
LID 13.21
+0.10
–0.15
[.520
+.004
–.00 6
]
4X R1.52
[R.060]
2X R1.63
[R.064]
SPH 1.57
[.062]
27.94
[1.100]
H -36260 - 2_ po _02 -18 - 2010
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
Data Sheet 9 of 9 Rev. 06, 2011-01-11
Edition 2011-01-11
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2005 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@inneon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFA211801 E V5
Condential, Limited Internal Distribution
Revision History: 2011-01-11 Data Sheet
Previous Version: 2010-08-04, Data Sheet
Page Subjects (major changes since last revision)
1 Updated ESD protection feature
All Removed earless package
All Data Sheet reects released product specications