1
Item Symbol Ratings Unit Remarks
Drain-source voltage VDS 120
VDSX 90
Continuous drain current ID67
Pulsed drain current ID(puls] ±268
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR 67
Non-repetitive
Maximum avalanche energy EAS 719.1
Repetitive
Maximum avalanche energy 27.0
Maximum drain-source dV/dt dVDS/dt 20
Peak diode recovery dV/dt dV/dt 5
Maximum power dissipation PD2.02
270
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3921-01L,S,SJ FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=120V VGS=0V
VDS=96V VGS=0V
VGS=±30V
ID=33.5A VGS=10V
ID=33.5A VDS=25V
VCC=48V ID=33.5A
VGS=10V
RGS=10 Ω
V
V
μA
nA
mΩ
S
pF
nC
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.463
62.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250μA VGS=0V
ID= 250μA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=60V
ID=67A
VGS=10V
IF=67A VGS=0V Tch=25°C
IF=67A VGS=0V
-di/dt=100A/μs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/μs
kV/μs
W
W
°C
°C
120
3.0 5.0
25
250
100
24.6 30.0
14 28
1880 2820
360 540
30 45
20 30
35 53
50 75
23 35
52 78
16 24
18 27
1.10 1.50
150
0.9
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series 200509
=
<
VGS=-30V
Note *1
Note *2
Note *3
VDS 120V
Note *4
Ta=25°C
Tc=25°C
=
<
=
<
Note *1 Tch 150°C
Note *2 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
<=
<
See to P4
=
<
Min. Typ. Max. Units
http://www.fujielectric.co.jp/fdt/scd/ http://store.iiic.cc/
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Characteristics
2SK3921-01L,S,SJ FUJI POWER MOSFET
0 25 50 75 100 125 150
0
40
80
120
160
200
240
280
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
01234567
0
20
40
60
80
100
120
140
6.0V
7.0V
7.5V
20V
10V
8.0V
6.5V
VGS=5.5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25°C
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C
0 20406080100120
0.00
0.04
0.08
0.12
0.16
0.20
7.5V
6.0V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25 °C
10V
20V
7.0V
6.5VVGS=5.5V
-50 -25 0 25 50 75 100 125 150
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=33.5A,VGS=10V
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3
2SK3921-01L,S,SJ FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250μA
VGS(th) [V]
Tch [°C]
0 102030405060708090
0
2
4
6
8
10
12
14
Vcc=60V
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=67A,Tch=25 °C
VGS [V]
100101102
101
102
103
C [pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 μs pulse test,Tch=25°C
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
IAS=27A
IAS=41A
IAS=67A
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=67A
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4
2SK3921-01L,S,SJ FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
Outline Drawings [mm]
T-pack(L) T-pack(S) T-pack(SJ) [D2-pack]
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-1
100
101
102
103
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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