MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-HBK * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 B1X C2E1 480.25 E2 B2 B1 E1 30 C1 800.25 9.5 3-M5 (12) (12) (12) Tab#110, t=0.5 20.5 B2X B2 90.1 29 +1.5 - 0.5 LABEL 20.5 28 E2 8 61 B2X E2 6 12 17.5 1.3 23 9 23 6 12 18.8 4-5.5 C1 C2E1 B1X E2 E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open IC Collector current -IC PC Parameter Conditions 7 V DC 100 A Collector reverse current DC (forward diode current) 100 A Collector dissipation TC=25C 620 W IB Base current DC 6 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1000 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M5 -- Mounting torque Mounting screw M5 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.47~1.96 N*m 15~20 kg*cm 420 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 100 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.5 V VBE (sat) Base-emitter saturation voltage -- -- 3.0 V -VCEO Collector-emitter reverse voltage -IC=100A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=100A, VCE=2.5V 750 -- -- -- -- -- 2.5 s Switching time VCC=300V, IC=100A, IB1=0.2A, -IB2=2.0A -- -- 10 s -- -- 2.0 s Transistor part (per 1/2 module) -- -- 0.2 C/ W Diode part (per 1/2 module) -- -- 0.65 C/ W Conductive grease applied (per 1/2 module) -- -- 0.1 C/ W IC=100A, IB=0.13A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 180 160 140 DC CURRENT GAIN hFE 0mA IB=30 0mA IB=20 0mA 3 IB=1 Tj=25C 120 100 IB=50mA 80 IB=30mA 60 40 20 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 -1 7 5 4 3 2 2.0 2.4 2.8 3.2 BASE-EMITTER VOLTAGE 10 3 7 5 4 3 2 3.6 10 1 7 5 4 3 2 IC=150A IC=100A 1 Tj=25C Tj=125C 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 BASE CURRENT IB (A) VBE(sat) VCE(sat) 10 -1 10 1 IB=0.13A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 3 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 4 2 3 4 5 7 10 2 10 0 7 5 4 3 2 VBE (V) 5 IC=50A Tj=25C Tj=125C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 2 VCE=2.5V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.5V Tj=25C 10 -2 1.6 VCE=5.0V VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 4 7 5 4 3 2 10 2 10 1 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 200 10 1 7 5 4 3 2 ts ton 10 0 7 5 4 3 2 10 -1 tf Tj=25C Tj=125C 4 5 7 10 1 VCC=300V IB1=200mA IB2=-2A 2 3 4 5 7 10 2 COLLECTOR CURRENT 2 3 4 IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE 10 1 7 5 4 3 2 200 ts tf 10 0 7 5 4 3 2 10 -1 REVERSE BIAS SAFE OPERATING AREA Tj=25C Tj=125C VCC=300V IB1=200mA IC=100A 10 0 2 3 4 5 7 10 1 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) 180 140 BASE REVERSE CURRENT -IB2 (A) 100 80 60 40 100 200 300 400 500 600 700 800 COLLECTOR-EMITTER VOLTAGE 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 0.12 0.08 0.04 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) 0.16 TIME (s) SECOND BREAKDOWN AREA 90 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.20 VCE (V) DERATING FACTOR OF F. B. S. O. A. DERATING FACTOR (%) s 0 50 s 1m s m 10 C COLLECTOR CURRENT IC (A) tw=50s 100s COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 0 100 D 10 2 7 5 3 2 Tj=125C 20 FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=-5.0A 120 0 2 3 4 5 7 10 2 IB2=-2.0A 160 10 2 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 1 7 5 4 3 2 10 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 VCC=300V 5 IB1=0.2A 3 2 -IB2=2.0A 10 1 7 5 3 2 Tj=25C 10 0 Tj=125C 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 2 Irr Qrr 10 1 trr (s) 1000 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 10 0 10 -1 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 1.0 Zth (j-c) (C/ W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999