TP0610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12 VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18 VP0610T -60 10 @ VGS = -10 V -1 to -0.12 BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18 Features Benefits Applications Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Power Supply, Converter Circuits Motor Control High-Side Switching Low On-Resistance: 8 Low Threshold: -1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer TO-92-18RM (TO-18 Lead Form) TO-226AA (TO-92) TO-236 (SOT-23) S 1 D 1 G 1 G 2 G 2 S 2 D 3 S 3 3 D Top View Top View Top View TP0610L VP0610L BS250 TP0610T (T0)* VP0610T (V0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol TP0610L TP0610T VP0610L VP0610T BS250 Drain-Source Voltage VDS -60 -60 -60 -60 -45 Gate-Source Voltage VGS 30 30 30 30 25 -0.18 -0.12 -0.18 -0.12 -0.18 -0.11 -0.07 -0.11 -0.07 -0.8 -0.4 -0.8 -0.4 0.8 0.36 0.8 0.36 0.32 0.14 0.32 0.14 156 350 156 350 Continuous Drain Current (TJ = 150C) TA= ID TA= Pulsed Drain Currenta Power Dissipation IDM TA= PD TA= Maximum Junction-to-Ambient Operating Junction & Storage Temperature Range RthJA TJ, Tstg -55 to 150 Unit V A 0.83 150 W C/W C Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70209. Applications information may also be obtained via FaxBack, request document #70611. Siliconix S-52426--Rev. E, 14-Apr-97 1 TP0610L/T, VP0610L/T, BS250 Specificationsa Limits TP0610L/T Parameter Symbol Test Conditions Typb VGS = 0 V, ID = -10 mA -70 VP0610L/T Min Max Min Max BS250 Min Max Unit Static Drain-Source B kd Breakdown V Voltage lt Gate-Threshold Voltage V(BR)DSS VGS(th) -60 VGS = 0 V, ID = -100 mA -45 VDS = VGS, ID = -1 mA -1.9 -1 VDS = 0 V, VGS = "20 V Gate-Body Leakage -60 -1 "10 TJ = IGSS -2.4 -3.5 "10 nA "20 VDS = -48 V, VGS = 0 V TJ = IDSS -1 -1 -200 -200 VDS = -25 V, VGS = 0 V ID(on) L VDS = -10 V VGS = -10 10 V Forward Transconductance c Diode Forward Voltage rDS(on) gfs VSD VGS = -10 V ID = -0.5 05A -180 -50 -750 -600 T VGS = -4.5 V, ID = -25 mA Drain-Source On-Resistancec mA -0.5 VDS = -10 V, VGS = -4.5 V On-State Drain Currentc -3.5 "50 VDS = 0 V, VGS = "15 V Zero Gate Voltage Drain Current -1 V L TJ = 11 25 8 10 10 15 20 20 10 10 VGS = -10 V ID = -0.2 A T 6.5 VDS = -10 V, ID = -0.5 A L 125 80 80 VDS = -10 V ID = -0.1 A T 90 60 70 IS = -0.5 A, VGS = 0 V mA -220 W 14 mS -1.1 V Dynamic Input Capacitance Ciss 15 60 60 Output Capacitance Coss 10 25 25 Reverse Transfer Capacitance Crss 3 5 5 tON 8 VDS = -25 V, VGS = 0 V f = 1 MHz pF Switchingd Turn-On Time td(on) tr tOFF Turn-Off Time VDD = -25 V, RL = 133 W ID ^ -0.18 A, VGEN = -10 V RG = 25 W 6 10 10 10 15 15 8 ns 10 td(off) 7 15 15 tf 8 20 20 Notes a. TA = 25C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. 2 10 VPDS06 Siliconix S-52426--Rev. E, 14-Apr-97 TP0610L/T, VP0610L/T, BS250 Typical Characteristics (25C Unless Otherwise Noted) Ohmic Region Characteristics Output Characteristics for Low Gate Drive -500 -10 -400 -7 V -300 -6 V -200 -5 V -100 -4 V -6 -2.4 V -4 -2.2 V -2 -2.0 V -3 V -1.8 V 0 0 0 -1 -2 -3 -4 -5 0 -0.4 VDS - Drain-to-Source Voltage (V) -0.8 -1.6 -2.0 On-Resistance vs. Gate-to-Source Voltage 20.0 VDS = -15 V ID = -25 mA TC = -55C 17.5 25C rDS(on) - On-Resistance ( -80 -1.2 VDS - Drain-to-Source Voltage (V) Transfer Characteristics -100 I D - Drain Current (mA) -2.6 V -8 I D - Drain Current (mA) I D - Drain Current (mA) VGS = -3.0, -2.8 V -8 V VGS = -10 V 125C -60 -40 -20 -0.2 A 15.0 -0.5 A 12.5 10.0 7.5 5.0 TJ = 25C 2.5 0 rDS(on) - Drain-Source On-Resistance ( 25 -1 -2 -3 -4 0 -5 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 2.25 rDS(on) - Drain-Source On-Resistance (Normalized) 0 20 15 VGS = -10 V 10 5 0 -20 VGS = -10 V ID = -0.5 A 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 -0.15 -0.30 -0.45 ID - Drain Current (A) Siliconix S-52426--Rev. E, 14-Apr-97 -0.60 -0.75 -50 -10 30 70 110 150 TJ - Junction Temperature (C) 3 TP0610L/T, VP0610L/T, BS250 Typical Characteristics (25C Unless Otherwise Noted) (Cont'd) Threshold Region -1 Capacitance 50 40 TJ = 150C -0.1 C - Capacitance (pF) I D - Drain Current (mA) VGS = 0 V f = 1 MHz 100C 50C -0.01 0C 30 20 Ciss 10 Coss -55C Crss 0 -0.001 0 -0.3 -0.6 -0.9 -1.2 -1.5 -1.8 0 -2.1 -10 -30 -40 -50 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching 100 -15.0 -12.5 VDD = -25 V RG = 25 VGS = 0 to -10 V tf ID = -0.5 A t - Switching Time (ns) VGS - Gate-to-Source Voltage (V) -20 -10.0 VDS = -30 V -48 V -7.5 -5.0 td(off) 10 tr td(on) -2.5 0 0 100 200 300 400 500 600 1 -10 -100 -1 k ID - Drain Current (A) Qg - Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) 4 Siliconix S-52426--Rev. E, 14-Apr-97