KSA643C - Fairchild Semiconductor Corporation

KSA643

PNP Epitaxial Si licon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

* PW≤10ms, Duty cycle≤50%

Electrical Characteristics Ta=25°C unless otherwise noted

* Pulse T est: PW≤350µs, Duty cycle≤2%

hFE Classification

Symbol Parameter Ratings Units

VCBO Collector-Base Voltage -40 V

VCEO Collector-Emitter Voltage -20 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current (DC) -500 mA

ICP * Collector Current (pulse) -700 mA

PCCollector Power Dissipation 500 mW

TJJunction Temperature 150 °C

TSTG Storage Temperature -55 ~ 150 °C

Symbol Param e ter Test Condit ion Min. Typ. Max. Units

BVCBO Collect or-B ase Break down Voltage IC= -100µA, IE=0 -40 V

BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -20 V

BVEBO E mitter-B ase Break down Voltage IE= -10µA, IC=0 -5 V

ICBO Collector Cut-off Current VCB= -25V, IE=0 -200 nA

IEBO Emitter Cut-off Current VEB= -3V, lC=0 -200 nA

hFE * DC Current Gain VCE= -1V, IC= -100mA 40 400

VCE(sat) * Collector-Emitter Saturation V oltage IC= -500mA, IB= -50mA -0.3 - 0.4 V

VBE(sat) * Base-Emitter Saturation Voltage IC= -500mA, IB= -50mA -1.0 -1.3 V

Classification R O Y G

hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400

KSA643

Low Frequency Power Amplifier

• Collector Power Dissipation: PC =500mW

• Complement to KSD261

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter 2. Base 3. Collector

TO-92

KSA643

Rev. A1, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Vo ltage

Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance

0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20

-50

-100

-150

-200

-250

-300

-350

-400

-450

-500

IB = -1.4mA

IB = -1.6mA

IB = -1.2mA

IB = -0.8mA

IB = -0.6mA

IB = -0.4mA

IB = -1.0mA

IB = -0.2mA

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

-1 -10 -100 -1000

100

1000

VCE = -1V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

-1 -10 -100 -1000

-0.01

-0.1

-1

-10

IC = 10 IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-1

-10

-100

-1000

VCE = -1V

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

-1 -10

100

-1

IE = 0

f = 100KHz

Cob [pF], CAPACITANCE

VCB [V], COLLECTOR-BASE VOL TAG E

0.46 ±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27 ±0.20]1.27TYP

[1.27 ±0.20]

3.60 ±0.20

14.47 ±0.40

1.02 ±0.10

(0.25) 4.58 ±0.20

4.58 +0.25

–0.15

0.38 +0.10

–0.05

0.38 +0.10

–0.05

TO-92

Package Demensions

KSA643

Dimensions in Millimeters

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor .

The datasheet is printed for reference information only.

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Product Folder - Fairchild P/N KSA643 - PNP Epitaxial Silicon Transistor

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Contents

Features | Product status/pricing/packaging

Features

Low Frequency Power Amplifier

● Collector Dissipation : PC = 500mW

● Complement to KSD261

● Suffix “-C” means Center Collector (1.

Emitter 2. Collector 3. Base)

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Product status/pricing/packaging

Product Product status Pricing* Package type Leads Packing method

KSA643CYBU Full Production $0.058 TO-92 3 BULK

KSA643YBU Full Production $0.058 TO-92 3 BULK

KSA643CYTA Full Production $0.058 TO-92 3 TAPE REEL

KSA643GBU Full Production $0.058 TO-92 3 BULK

KSA643OTA Full Production $0.058 TO-92 3 TAPE REEL

KSA643OBU Full Production $0.058 TO-92 3 BULK

KSA643YTA Full Production $0.058 TO-92 3 TAPE REEL

KSA643GTA Full Production $0.058 TO-92 3 TAPE REEL

* 1,000 piece Budgetary Pricing

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