1
Item Symbol Ratings Unit
Drain-source voltage V DS 600
Continuous drain current ID±12
Pulsed drain current ID(puls] ±48
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 12
Maximum Avalanche Energy E AS *1 183
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 2.02
Tc=25°C 195
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3501-01 FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=5A VGS=10V
ID=5A VDS=25V
VCC=300V ID=5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.641
62.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA V GS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=10A
VGS=10V
L=2.33mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
600
3.0 5.0
25
250
10 100
0.58 0.75
48
1200 1800
140 210
69
17 26
15 23
35 53
711
30 45
11 16.5
10 15
12 1.00 1.50
0.75
5.0
-55 to +150
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<*4 VDS 600V
<
=
*1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
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2
0 5 10 15 20
0.0
0.5
1.0
1.5
2.0
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
7.0V
VGS=6.5V
0.1 1 10
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
0 2 4 6 8 101214161820222426
0
2
4
6
8
10
12
14
16
18
20
22 20V 10V
8V
7.5V
7.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=6.5V
Characteristics
2SK3501-01 FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0 255075100125150
0
50
100
150
200
250
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
IAS=8A
IAS=5A
IAS=12A
EAS [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs . st art i ng Tch
EAS=f(s tarting Tch):Vcc = 60V
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3
100101
100
101
102
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
0 1020304050607080
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
480V
300V
Vcc= 120V
2SK3501-01 FUJI POWER MOSFET
VGS=f(Qg):ID=10A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=300V, VGS=10V , RG=10Ω
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
10-1 100101102103
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Thr eshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
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4
2SK3501-01 FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Sing le Pulse
Maximum Aval an c he C ur ren t v s P u ls e wi dth
IAV=f(tAV):star ting Tch =2 5 °C,Vcc=60V
Avalan che Cu rr en t I
AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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