M25PX64-VME6TG - Numonyx - Product.Network

November 2009 Rev 10 1/70

M25PX64

64-Mbit, dual I/O, 4-Kbyte subsector erase,

serial flash memory with 75 MHz SPI bus interface

Features

SPI bus compatible serial interface

75 MHz (maximum) clock frequency

2.7 V to 3.6 V single supply voltage

Dual input/output instructions resulting in an

equivalent clock frequency of 150 MHz:

– Dual output fast read instruction

– Dual input fast program instruction

Whole memory continuously read by sending

once a fast read or a dual output fast read

instruction and an address

64 Mbit Flash memory

– Uniform 4-Kbyte subsectors

– Uniform 64-Kbyte sectors

Additional 64-byte user-lockable, one-time

programmable (OTP) area

Erase capability

– Subsector (4-Kbyte) granularity

– Sector (64-Kbyte) granularity

– Bulk erase (64 Mbits) in 68 s (typical)

Write protections

– Software write protection applicable to

every 64-Kbyte sector (volatile lock bit)

– Hardware write protection: protected area

size defined by three non-volatile bits (BP0,

BP1 and BP2)

Deep power-down mode: 5 μA (typical)

Electronic signature

– JEDEC standard two-byte signature

(7117h)

– Unique ID code (UID) with 16 bytes read-

only, available upon customer request

More than 100 000 write cycles per sector

More than 20 years data retention

Packages

– RoHS compliant

Automotive Certified Parts Available

VDFPN8 (ME)

8 × 6 mm (MLP8)

SO16 (MF)

300 mils width TBGA24 (ZM) 6x8 mm

VDFPN8 (MD)

8 × 6 mm (MLP8)

(with reduced D2

dimension)

www.numonyx.com

Contents M25PX64
2/70   
Contents
Description . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . .  . . . . . .  . . 6
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . 9
1 Serial data output (DQ1)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9
2 Serial data input (DQ0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9
3 Serial Clock (C)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9
4 Chip Select (S)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9
5 Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9
6 Write protect/enhanced program supply voltage (W/VPP)  . . . . . . . . . . . .  10
7 VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10
8 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10
SPI modes  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Operating features   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
1 Page programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
2 Dual input fast program   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
3 Subsector erase, sector erase and bulk erase . . . . . . . . . . . . . . . . . . . . .  13
4 Polling during a write, program or erase cycle  . . . . . . . . . . . . . . . . . . . . .  13
5 Active power, standby power and deep power-down modes  . . . . . . . . . .  13
6 Status register   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
7 Protection modes  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
7.1 Protocol-related protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7.2 Specific hardware and software protection   . . . . . . . . . . . . . . . . . . . . . . 16
8 Hold condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
Memory organization  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Instructions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
1 Write enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  28
2 Write disable (WRDI)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  29
3 Read identification (RDID)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  30

M25PX64 Contents
 3/70
4 Read status register (RDSR)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  32
4.1 WIP bit  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
4.2 WEL bit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
4.3 BP2, BP1, BP0 bits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
4.4 Top/bottom bit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
4.5 SRWD bit  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
5 Write status register (WRSR)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  34
6 Read data bytes (READ)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  36
7 Read data bytes at higher speed (FAST_READ)  . . . . . . . . . . . . . . . . . . .  37
8 Dual output fast read (DOFR)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  38
9 Read lock register (RDLR)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  39
10 Read OTP (ROTP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  40
11 Page program (PP)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  41
12 Dual input fast program (DIFP)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  43
13 Program OTP instruction (POTP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  45
14 Write to lock register (WRLR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  47
15 Subsector erase (SSE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  48
16 Sector erase (SE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  49
17 Bulk erase (BE)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  50
18 Deep power-down (DP)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  51
19 Release from deep power-down (RDP)  . . . . . . . . . . . . . . . . . . . . . . . . . .  52
Power-up and power-down   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
DC and AC parameters  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Ordering information   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Revision history   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

List of tables M25PX64
4/70   
List of tables
Table 1. Signal names  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. Software protection truth table (sectors 0 to 127, 64-Kbyte granularity). . . . . . . . . . . . . . . 16
Table 3. Protected area sizes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 4. Memory organization  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 5. Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 6. Read identification (RDID) data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 7. Status register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 8. Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 9. Lock register out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 10. Lock register in . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 11. Power-up timing and VWI threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 12. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 13. Operating conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 14. Data Retention and Endurance  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 15. AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 16. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 17. DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 18. AC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 19. VDFPN8 (MLP8, ME) 8-lead very thin dual flat package no lead,
8 × 6 mm, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 20. VDFPN8 (MLP8, MD) 8-lead very thin dual flat package no lead,
8 × 6 mm, package mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 21. SO16 wide - 16-lead plastic small outline, 300 mils body width, mechanical data . . . . . . . 64
Table 22. TBGA 6x8 mm 24-ball package dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Table 23. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 24. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

M25PX64 List of figures
 5/70
List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 2. VDFPN8 connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. SO16 connections  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 4. BGA 6x8 24 ball ballout  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 5. Bus master and memory devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6. SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 7. Hold condition activation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 8. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 9. Write enable (WREN) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 10. Write disable (WRDI) instruction sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 11. Read identification (RDID) instruction sequence and data-out sequence  . . . . . . . . . . . . . 31
Figure 12. Read status register (RDSR) instruction sequence and data-out sequence  . . . . . . . . . . . 33
Figure 13. Write status register (WRSR) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 14. Read data bytes (READ) instruction sequence and data-out sequence  . . . . . . . . . . . . . . 36
Figure 15. Read data bytes at higher speed (FAST_READ) instruction sequence
and data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 16. Dual output fast read instruction sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 17. Read lock register (RDLR) instruction sequence and data-out sequence  . . . . . . . . . . . . . 39
Figure 18. Read OTP (ROTP) instruction and data-out sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 19. Page program (PP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 20. Dual input fast program (DIFP) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 21. Program OTP (POTP) instruction sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 22. How to permanently lock the 64 OTP bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 23. Write to lock register (WRLR) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 24. Subsector erase (SSE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 25. Sector erase (SE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 26. Bulk erase (BE) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 27. Deep power-down (DP) instruction sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 28. Release from deep power-down (RDP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . 52
Figure 29. Power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 30. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 31. Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 32. Write protect setup and hold timing during WRSR when SRWD=1 . . . . . . . . . . . . . . . . . . 60
Figure 33. Hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 34. Output timing  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 35. VPPH timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 36. VDFPN8 (MLP8, ME) 8-lead very thin dual flat package no lead,
8 × 6 mm, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Figure 37. VDFPN8 (MLP8, MD) 8-lead very thin dual flat package no lead,
8 × 6 mm, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Figure 38. SO16 wide - 16-lead plastic small outline, 300 mils body width, package outline  . . . . . . . 64
Figure 39. TBGA, 6x8 mm, 24 ball package outline  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Description M25PX64

6/70

1 Description

The M25PX64 is a 64-Mbit (8 Mbits x 8) serial flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus.

The M25PX64 supports two new, high-performance dual input/output instructions:

Dual output fast read (DOFR) instruction used to read data at up to 75 MHz by using

both pin DQ1 and pin DQ0 as outputs

Dual input fast program (DIFP) instruction used to program data at up to 75 MHz by

using both pin DQ1 and pin DQ0 as inputs

These new instructions double the transfer bandwidth for read and program operations.

The memory can be programmed 1 to 256 bytes at a time, using the page program

instruction.

The memory is organized as 128 sectors that are further divided into 16 subsectors each

(2048 subsectors in total).

The memory can be erased a 4-Kbyte subsector at a time, a 64-Kbyte sector at a time, or as

a whole. It can be write protected by software using a mix of volatile and non-volatile

protection features, depending on the application needs. The protection granularity is of 64

Kbytes (sector granularity).

The M25PX64 has 64 one-time-programmable bytes (OTP bytes) that can be read and

programmed using two dedicated instructions, Read OTP (ROTP) and Program OTP

(POTP), respectively. These 64 bytes can be permanently locked by a particular program

OTP (POTP) sequence. Once they have been locked, they become read-only and this state

cannot be reverted.

Further features are available as additional security options. More information on these

security features is available, upon completion of an NDA (nondisclosure agreement), and

are, therefore, not described in this datasheet. For more details of this option contact your

nearest Numonyx sales office.

M25PX64 Description

7/70

Figure 1. Logic diagram

Figure 2. VDFPN8 connections

1. There is an exposed central pad on the underside of the VDFPN8 package. This is pulled, internally, to

VSS, and must not be allowed to be connected to any other voltage or signal line on the PCB.

2. See Package mechanical section for package dimensions, and how to identify pin-1.

Table 1. Signal nam es

Signal name Function Direction

C Serial Clock Input

DQ0 Serial Data input I/O(1)

1. Serves as an output during dual output fast read (DOFR) instructions.

DQ1 Serial Data output I/O(2)

2. Serves as an input during dual input fast program (DIFP) instructions.

SChip Select Input

W/VPP Write Protect/Enhanced Program supply voltage Input

HOLD Hold Input

VCC Supply voltage –

VSS Ground –

AI14228b

VCC

M25PX64

HOLD

VSS

DQ1

DQ0

W/V

AI13720c

5DQ0VSS C

HOLDDQ1

M25PX64

W/V

Description M25PX64

8/70

Figure 3. SO16 connections

1. DU = don’t use.

2. See Package mechanical section for package dimensions, and how to identify pin-1.

Figure 4. BGA 6x8 24 ball ballout

Note: 1 NC = No Connection

2See S ection 11: Package mechanical.

AI13721c

DU DU

VCC

HOLD

DUDU

M25PX64

DQ1 VSS

DQ0

W/V

M25PX64 Signal descript ions

9/70

2 Signal descriptions

2.1 Serial data output (DQ1)

This output signal is used to transfer data serially out of the device. Data are shifted out on

the falling edge of Serial Clock (C).

During the dual input fast program (DIFP) instruction, pin DQ1 is used as an input. It is

latched on the rising edge of the Serial Clock (C).

2.2 Serial data input (DQ0)

This input signal is used to transfer data serially into the device. It receives instructions,

addresses, and the data to be programmed. Values are latched on the rising edge of Serial

Clock (C).

During the dual output fast read (DOFR) instruction, pin DQ0 is used as an output. Data are

shifted out on the falling edge of the Serial Clock (C).

2.3 Ser ial Clock (C)

This input signal provides the timing of the serial interface. Instructions, addresses, or data

present at serial data input (DQ0) are latched on the rising edge of Serial Clock (C). Data on

serial data output (DQ1) changes after the falling edge of Serial Clock (C).

2.4 Chip Select (S)

When this input signal is High, the device is deselected and serial data output (DQ1) is at

high impedance. Unless an internal program, erase or write status register cycle is in

progress, the device will be in the standby power mode (this is not the deep power-down

mode). Driving Chip Select (S) Low enables the device, placing it in the active power mode.

After power-up, a falling edge on Chip Select (S) is required prior to the start of any

instruction.

2.5 Hold (HOLD)

The Hold (HOLD) signal is used to pause any serial communications with the device without

deselecting the device.

During the hold condition, the serial data output (DQ1) is high impedance, and serial data

input (DQ0) and Serial Clock (C) are don’t care.

To start the hold condition, the device must be selected, with Chip Select (S) driven Low.

Signal descriptions M25PX64

10/70

2.6 Write protect/enhanced program supply voltage (W/VPP)

W/VPP is both a control input and a power supply pin. The two functions are selected by the

voltage range applied to the pin.

If the W/VPP input is kept in a low voltage range (0 V to VCC) the pin is seen as a control

input. This input signal is used to freeze the size of the area of memory that is protected

against program or erase instructions (as specified by the values in the BP2, BP1 and BP0

bits of the status register. See Table 9).

If VPP is in the range of VPPH (as defined in Table 15) it acts as an additional power

supply.(1)

2.7 VCC supply voltage

VCC is the supply voltage.

2.8 VSS ground

VSS is the reference for the VCC supply voltage.

1. Avoid applying VPPH to the W/VPP pin during Bulk Erase.

M25PX64 SPI modes

11/70

3 SPI modes

These devices can be driven by a microcontroller with its SPI peripheral running in either of

the two following modes:

CPOL=0, CPHA=0

CPOL=1, CPHA=1

For these two modes, input data is latched in on the rising edge of Serial Clock (C), and

output data is available from the falling edge of Serial Clock (C).

The difference between the two modes, as shown in Figure 6, is the clock polarity when the

bus master is in standby mode and not transferring data:

C remains at 0 for (CPOL=0, CPHA=0)

C remains at 1 for (CPOL=1, CPHA=1)

Fig u re 5. Bus master and memory devices on th e SPI bu s

1. The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriate.

Figure 5 shows an example of three devices connected to an MCU, on an SPI bus. Only

one device is selected at a time, so only one device drives the serial data output (DQ1) line

at a time, the other devices are high impedance. Resistors R (represented in Figure 5)

ensure that the M25PX64 is not selected if the bus master leaves the S line in the high

impedance state. As the bus master may enter a state where all inputs/outputs are in high

impedance at the same time (for example, when the bus master is reset), the clock line (C)

must be connected to an external pull-down resistor so that, when all inputs/outputs become

high impedance, the S line is pulled High while the C line is pulled Low (thus ensuring that S

and C do not become High at the same time, and so, that the tSHCH requirement is met).

The typical value of R is 100 kΩ, assuming that the time constant R*Cp (Cp = parasitic

capacitance of the bus line) is shorter than the time during which the bus master leaves the

SPI bus in high impedance.

AI13725b

SPI Bus Master

SPI memory

device

SDO

SDI

SCK

DQ1DQ0

SPI memory

device

DQ1 DQ0

SPI memory

device

DQ1DQ0

CS3 CS2 CS1

SPI interface with

(CPOL, CPHA) =

(0, 0) or (1, 1)

WHOLD HOLD WHOLD

RRR

VCC

VCC VCC VCC

VSS

VSS VSS VSS

SPI modes M25PX64

12/70

Example: Cp = 50 pF, that is R*Cp = 5 μs <=> the application must ensure that the bus

master never leaves the SPI bus in the high impedance state for a time period shorter than

5μs.

Figure 6. SPI modes supported

AI1373

MSB

CPHA

DQ0

CPOL

DQ1

MSB

M25PX64 O p er atin g fe atur es

13/70

4 Operating features

4.1 Page programming

To program one data byte, two instructions are required: write enable (WREN), which is one

byte, and a page program (PP) sequence, which consists of four bytes plus data. This is

followed by the internal program cycle (of duration tPP).

To spread this overhead, the page program (PP) instruction allows up to 256 bytes to be

programmed at a time (changing bits from ‘1’ to ‘0’), provided that they lie in consecutive

addresses on the same page of memory.

For optimized timings, it is recommended to use the page program (PP) instruction to

program all consecutive targeted bytes in a single sequence versus using several page

program (PP) sequences with each containing only a few bytes (see P age program (PP )

and Table 18: AC characteristics).

4.2 Dual input fast program

The dual input fast program (DIFP) instruction makes it possible to program up to 256 bytes

using two input pins at the same time (by changing bits from ‘1’ to ‘0’).

For optimized timings, it is recommended to use the dual input fast program (DIFP)

instruction to program all consecutive targeted bytes in a single sequence rather to using

several dual input fast program (DIFP) sequences each containing only a few bytes (see

Section 6.12: Du al i nput fast program (DIFP )).

4.3 Subsector erase, sector erase and bulk erase

The page program (PP) instruction allows bits to be reset from ‘1’ to ’0’. Before this can be

applied, the bytes of memory need to have been erased to all 1s (FFh). This can be

achieved either a subsector at a time, using the subsector erase (SSE) instruction, a sector

at a time, using the sector erase (SE) instruction, or throughout the entire memory, using the

bulk erase (BE) instruction. This starts an internal erase cycle (of duration tSSE, tSE or tBE).

The erase instruction must be preceded by a write enable (WREN) instruction.

4.4 Polling during a write, program or erase cycle

A further improvement in the time to write status register (WRSR), program OTP (POTP),

program (PP), dual input fast program (DIFP) or erase (SSE, SE or BE) can be achieved by

not waiting for the worst case delay (tW, tPP

, tSSE, tSE, or tBE). The write in progress (WIP) bit

is provided in the status register so that the application program can monitor its value,

polling it to establish when the previous write cycle, program cycle or erase cycle is

complete.

4.5 Active power, standby power and deep power-down modes

When Chip Select (S) is Low, the device is selected, and in the active power mode.

Ope rating features M25PX64

14/70

When Chip Select (S) is High, the device is deselected, but could remain in the active power

mode until all internal cycles have completed (program, erase, write status register). The

device then goes in to the standby power mode. The device consumption drops to ICC1.

The deep power-down mode is entered when the specific instruction (the deep power-down

(DP) instruction) is executed. The device consumption drops further to ICC2. The device

remains in this mode until another specific instruction (the release from deep power-down

(RDP) instruction) is executed.

While in the deep power-down mode, the device ignores all write, program and erase

instructions (see Section 6. 18: Deep power-down (DP)), this can be used as an extra

software protection mechanism, when the device is not in active use, to protect the device

from inadvertent write, program or erase instructions.

4.6 Status register

The status register contains a number of status and control bits that can be read or set (as

appropriate) by specific instructions. See Secti o n 6.4: Re ad s tatus re gister (RDSR) for a

detailed description of the status register bits.

M25PX64 O p er atin g fe atur es

15/70

4.7 Protection modes

There are protocol-related and specific hardware and software protection modes. They are

described below.

4.7.1 Protocol-related protections

The environments where non-volatile memory devices are used can be very noisy. No SPI

device can operate correctly in the presence of excessive noise. To help combat this, the

M25PX64 features the following data protection mechanisms:

Power on reset and an internal timer (tPUW) can provide protection against inadvertent

changes while the power supply is outside the operating specification

Program, erase and write status register instructions are checked that they consist of a

number of clock pulses that is a multiple of eight, before they are accepted for

execution

All instructions that modify data must be preceded by a write enable (WREN)

instruction to set the write enable latch (WEL) bit. This bit is returned to its reset state

by the following events:

– Power-up

– Write disable (WRDI) instruction completion

– Write status register (WRSR) instruction completion

– Write to lock register (WRLR) instruction completion

– Program OTP (POTP) instruction completion

– Page program (PP) instruction completion

– Dual input fast program (DIFP) instruction completion

– Subsector erase (SSE) instruction completion

– Sector erase (SE) instruction completion

– Bulk erase (BE) instruction completion

In addition to the low power consumption feature, the deep power-down mode offers

extra software protection, as all write, program and erase instructions are ignored.

Ope rating features M25PX64

16/70

4.7.2 S p eci fi c ha rdware and software protection

There are two software protected modes, SPM1 and SPM2, that can be combined to protect

the memory array as required. The SPM2 can be locked by hardware with the help of the W

input pin.

SPM1 and SPM2

The first software protected mode (SPM1) is managed by specific lock registers

assigned to each 64-Kbyte sector.

The lock registers can be read and written using the read lock register (RDLR) and

write to lock register (WRLR) instructions.

In each lock register two bits control the protection of each sector: the write lock bit and

the lock down bit.

– Write lock bit:

The write lock bit determines whether the contents of the sector can be modified

(using the write, program or erase instructions). When the write lock bit is set to ‘1’,

the sector is write protected – any operations that attempt to change the data in

the sector will fail. When the write lock bit is reset to ‘0’, the sector is not write

protected by the lock register, and may be modified.

– Lock down bit:

The lock down bit provides a mechanism for protecting software data from simple

hacking and malicious attack. When the lock down bit is set to ‘1’, further

modification to the write lock and lock down bits cannot be performed. A power-up

is required before changes to these bits can be made. When the lock down bit is

reset to ‘0’, the write lock and lock down bits can be changed.

The definition of the lock register bits is given in Table 9: Lo ck regis t er out.

the second software protected mode (SPM2) uses the block protect bits (see

Section 6.4.3: BP2, BP1, BP0 bits) and the top/bottom bit (see Section 6.4.4:

Top/bottom bi t) to allow part of the memory to be configured as read-only.

Table 2. Software protec tion tru th table (sectors 0 to 127, 64-Kbyte granul arity)

Sector lock register

Protection status

Lock

down bit Write

lock bit

Sector unprotected from program/erase/write operations, protection status

reversible

Sector protected from program/erase/write operations, protection status

reversible

Sector unprotected from program/erase/write operations,

Sector protection status cannot be changed except by a power-up.

Sector protected from program/erase/write operations,

Sector protection status cannot be changed except by a power-up.

M25PX64 O p er atin g fe atur es

17/70

As a second level of protection, the Write Protect signal (applied on the W/VPP pin) can

freeze the status register in a read-only mode. In this mode, the block protect bits (BP2,

BP1, BP0) and the status register write disable bit (SRWD) are protected. For more details,

see Section 6 .5: Writ e status register (WRSR) .

Table 3. P r otected area si zes

Status register contents Memory content

bit BP

bit 2 BP

bit 1 BP

bit 0 Protected area Unprotected area

0 0 0 0 none All sectors(1) (128 sectors: 0 to 127)

0 0 0 1 Upper 64th (2 sectors: 126 and 127) Lower 63/64ths (126 sectors: 0 to 125)

0 0 1 0 Upper 32nd (4 sectors: 124 to 127) Lower 31/32nds (124 sectors: 0 to 123)

0 0 1 1 Upper 16th (8 sectors: 120 to 127) Lower 15/16ths (120 sectors: 0 to 119)

0 1 0 0 Upper 8th (16 sectors: 56 to 63) Lower 7/8ths (112 sectors: 0 to 111)

0 1 0 1 Upper quarter (32 sectors: 96 to 127) Lower three-quarters (96 sectors: 0 to 95)

0 1 1 0 Upper half (64 sectors: 64 to 127) Lower half (64 sectors: 0 to 63)

0 1 1 1 All sectors (128 sectors: 0 to 127) none

1 0 0 0 none All sectors(1) (128 sectors: 0 to 128)

1 0 0 1 Lower 64th (2 sectors: 0 to1) Upper 63/64ths (126 sectors: 2 to 127)

1 0 1 0 Lower 32nd (4 sectors: 0 to 3) Upper 31/32nds (124 sectors: 4 to 127)

1 0 1 1 Lower 16th (8 sectors: 0 to 7) Upper 15/16ths (120 sectors: 8 to 127)

1 1 0 0 Lower 8th (16 sectors: 0 to15) Upper 7/8ths (112 sectors: 16 to 127)

1 1 0 1 Lower 4th (32 sectors: 0 to 31) Upper 3/4ths (96 sectors: 32 to 127)

1 1 1 0 Lower half (64 sectors: 0 to 63) Upper half (64 sectors: 64 to 127)

1 1 1 1 All sectors (128 sectors: 0 to 127) none

1. The device is ready to accept a bulk erase instruction if, and only if, all block protect (BP2, BP1, BP0) are 0.

Ope rating features M25PX64

18/70

4.8 Hold condition

The Hold (HOLD) signal is used to pause any serial communications with the device without

resetting the clocking sequence. However, taking this signal Low does not terminate any

write status register, program or erase cycle that is currently in progress.

To enter the hold condition, the device must be selected, with Chip Select (S) Low.

The hold condition starts on the falling edge of the Hold (HOLD) signal, provided that this

coincides with Serial Clock (C) being Low (as shown in Figure 7).

The hold condition ends on the rising edge of the Hold (HOLD) signal, provided that this

coincides with Serial Clock (C) being Low.

If the falling edge does not coincide with Serial Clock (C) being Low, the hold condition

starts after Serial Clock (C) next goes Low. Similarly, if the rising edge does not coincide

with Serial Clock (C) being Low, the hold condition ends after Serial Clock (C) next goes

Low (this is shown in Figure 7).

During the hold condition, the serial data output (DQ1) is high impedance, and serial data

input (DQ0) and Serial Clock (C) are don’t care.

Normally, the device is kept selected, with Chip Select (S) driven Low, for the whole duration

of the hold condition. This is to ensure that the state of the internal logic remains unchanged

from the moment of entering the hold condition.

If Chip Select (S) goes High while the device is in the Hold condition, this has the effect of

resetting the internal logic of the device. To restart communication with the device, it is

necessary to drive Hold (HOLD) High, and then to drive Chip Select (S) Low. This prevents

the device from going back to the hold condition.

Figure 7. Hold condition activat ion

AI02029D

HOLD

Hold

condition

(standard use)

Hold

condition

(non-standard use)

M25PX64 Memory orga ni zation

19/70

5 Memory organization

The memory is organized as:

8 388 608 bytes (8 bits each)

2048 subsectors (4 Kbytes each)

128 sectors (64 Kbytes each)

32768 pages (256 bytes each)

64 OTP bytes located outside the main memory array.

Each page can be individually programmed (bits are programmed from ‘1’ to ‘0’). The device

is subsector, sector or bulk erasable (bits are erased from ‘0’ to ‘1’) but not page erasable.

Figure 8. Block diagra m

AI13722b

HOLD

W/VPP Control logic High voltage

generator

I/O shift register

Address register

and counter

256 byte

data buer

256 bytes (page size)

X decoder

Y decoder

DQ0

DQ1

Status

00000h

7FFFFFh

000FFh

64 OTP bytes

Memory organization M25 PX64

20/70

Table 4. Memory organization

Sector Subsector Address range Sector Subsector Address rang e

127

2047 7FF000h 7FFFFFh

116

1871 74F000h 74FFFFh

...

2032 7F0000h 7F0FFFh 1856 740000h 740FFFh

126

2031 7EF000h 7EFFFFh

115

1855 73F000h 73FFFFh

...

2016 7E0000h 7E0FFFh 1840 730000h 730FFFh

125

2015 7DF000h 7DFFFFh

114

1839 72F000h 72FFFFh

...

2000 7D0000h 7D0FFFh 1824 720000h 720FFFh

124

1999 7CF000h 7CFFFFh

113

1823 71F000h 71FFFFh

...

1984 7C0000h 7C0FFFh 1808 710000h 710FFFh

123

1983 7BF000h 7BFFFFh

112

1807 70F000h 70FFFFh

...

1968 7B0000h 7B0FFFh 1792 700000h 700FFFh

122

1967 7AF000h 7AFFFFh

111

1791 6FF000h 6FFFFFh

...

1952 7A0000h 7A0FFFh 1776 6F0000h 6F0FFFh

121

1951 79F000h 79FFFFh

110

1775 6EF000h 6EFFFFh

...

1936 790000h 790FFFh 1760 6E0000h 6E0FFFh

120

1935 78F000h 78FFFFh

109

1759 6DF000h 6DFFFFh

...

1920 780000h 780FFFh 1744 6D0000h 6D0FFFh

119

1919 77F000h 77FFFFh

108

1743 6CF000h 6CFFFFh

...

1904 770000h 770FFFh 1728 6C0000h 6C0FFFh

118

1903 76F000h 76FFFFh

107

1727 6BF000h 6BFFFFh

...

1888 760000h 760FFFh 1712 6B0000h 6B0FFFh

117

1887 75F000h 75FFFFh

106

1711 6AF000h 6AFFFFh

...

1872 750000h 750FFFh 1696 6A0000h 6A0FFFh

M25PX64 Memory orga ni zation

21/70

105

1695 69F000h 69FFFFh

1519 5EF000h 5EFFFFh

...

1680 690000h 690FFFh 1504 5E0000h 5E0FFFh

104

1679 68F000h 68FFFFh

1503 5DF000h 5DFFFFh

...

1664 680000h 680FFFh 464 5D0000h 5D0FFFh

103

1663 67F000h 67FFFFh

1487 5CF000h 5CFFFFh

...

1648 670000h 670FFFh 1472 5C0000h 5C0FFFh

102

1647 66F000h 66FFFFh

1471 5BF000h 5BFFFFh

...

1632 660000h 660FFFh 1456 5B0000h 5B0FFFh

101

1631 65F000h 65FFFFh

1455 5AF000h 5AFFFFh

...

1616 650000h 650FFFh 1440 5A0000h 5A0FFFh

100

1615 64F000h 64FFFFh

1439 59F000h 59FFFFh

...

1600 640000h 640FFFh 1424 590000h 590FFFh

1599 63F000h 63FFFFh

1423 58F000h 58FFFFh

...

1584 630000h 630FFFh 1408 580000h 580FFFh

1583 62F000h 62FFFFh

1407 57F000h 57FFFFh

...

1568 620000h 620FFFh 1392 570000h 570FFFh

1567 61F000h 61FFFFh

1391 56F000h 56FFFFh

...

1552 610000h 610FFFh 1376 560000h 560FFFh

1551 60F000h 60FFFFh

1375 55F000h 55FFFFh

...

1536 600000h 600FFFh 1360 550000h 550FFFh

1535 5FF000h 5FFFFFh

1359 54F000h 54FFFFh

...

1520 5F0000h 5F0FFFh 1344 540000h 540FFFh

Table 4. Memory organization (cont inued)

Sector Subsector Address range Sector Subsector Address rang e

Memory organization M25 PX64

22/70

1343 53F000h 53FFFFh

1167 48F000h 48FFFFh

...

1328 530000h 530FFFh 1152 480000h 480FFFh

1327 52F000h 52FFFFh

1151 47F000h 47FFFFh

...

1312 520000h 520FFFh 1136 470000h 470FFFh

1311 51F000h 51FFFFh

1135 46F000h 46FFFFh

...

1296 510000h 510FFFh 1120 460000h 460FFFh

1295 50F000h 50FFFFh

1119 45F000h 45FFFFh

...

1280 500000h 500FFFh 1104 450000h 450FFFh

1279 4FF000h 4FFFFFh

1103 44F000h 44FFFFh

...

1264 4F0000h 4F0FFFh 1088 440000h 440FFFh

1263 4EF000h 4EFFFFh

1087 43F000h 43FFFFh

...

1248 4E0000h 4E0FFFh 1072 430000h 430FFFh

1247 4DF000h 4DFFFFh

1071 42F000h 42FFFFh

...

1232 4D0000h 4D0FFFh 1056 420000h 420FFFh

1231 4CF000h 4CFFFFh

1055 41F000h 41FFFFh

...

1216 4C0000h 4C0FFFh 1040 410000h 410FFFh

1215 4BF000h 4BFFFFh

1039 40F000h 40FFFFh

...

1200 4B0000h 4B0FFFh 1024 400000h 400FFFh

1199 4AF000h 4AFFFFh

1023 3FF000h 3FF000h

...

1184 4A0000h 4A0FFFh 1008 3F0000h 3F0FFFh

1183 49F000h 49FFFFh

1007 3EF000h 3EFFFFh

...

1168 490000h 490FFFh 992 3E0000h 3E0FFFh

Table 4. Memory organization (cont inued)

Sector Subsector Address range Sector Subsector Address rang e

M25PX64 Memory orga ni zation

23/70

991 3DF000h 3DFFFFh

815 32F000h 32FFFFh

...

976 3D0000h 3D0FFFh 800 320000h 320FFFh

975 3CF000h 3CFFFFh

799 31F000h 31FFFFh

...

960 3C0000h 3C0FFFh 784 310000h 310FFFh

959 3BF000h 3BFFFFh

783 30F000h 30FFFFh

...

944 3B0000h 3B0FFFh 768 300000h 300FFFh

943 3AF000g 3AFFFFh

767 2FF000h 2FFFFFh

...

928 3A0000h 3A0FFFh 752 2F0000h 2F0FFFh

927 39F000h 39FFFFh

751 2EF000h 2EFFFFh

...

912 390000h 390FFFh 736 2E0000h 2E0FFFh

911 38F000h 38FFFFh

735 2DF000h 2DFFFFh

...

896 380000h 380FFFh 720 2D0000h 2D0FFFh

895 37F000h 37FFFFh

719 2CF000h 2CFFFFh

...

880 370000h 370FFFh 704 2C0000h 2C0FFFh

879 36F000h 36FFFFh

703 2BF000h 2BFFFFh

...

864 360000h 360FFFh 688 2B0000h 2B0FFFh

863 35F000h 35FFFFh

687 2AF000h 2AFFFFh

...

848 350000h 350FFFh 672 2A0000h 2A0FFFh

847 34F000h 34FFFFh

671 29F000h 29FFFFh

...

832 340000h 340FFFh 656 290000h 290FFFh

831 33F000h 33FFFFh

655 28F000h 28FFFFh

...

816 330000h 330FFFh 640 280000h 280FFFh

Table 4. Memory organization (cont inued)

Sector Subsector Address range Sector Subsector Address rang e

Memory organization M25 PX64

24/70

639 27F000h 27FFFFh

463 1CF000h 1CFFFFh

...

624 270000h 270FFFh 448 1C0000h 1C0FFFh

623 26F000h 26FFFFh

447 1BF000h 1BFFFFh

...

608 260000h 260FFFh 432 1B0000h 1B0FFFh

607 25F000h 25FFFFh

431 1AF000h 1AFFFFh

...

592 250000h 250FFFh 416 1A0000h 1A0FFFh

591 24F000h 24FFFFh

415 19F000h 19FFFFh

...

576 240000h 240FFFh 400 190000h 190FFFh

575 23F000h 23FFFFh

399 18F000h 18FFFFh

...

560 230000h 230FFFh 384 180000h 180FFFh

559 22F000h 22FFFFh

383 17F000h 17FFFFh

...

544 220000h 220FFFh 368 170000h 170FFFh

543 21F000h 21FFFFh

367 16F000h 16FFFFh

...

528 210000h 210FFFh 352 160000h 160FFFh

527 20F000h 20FFFFh

351 15F000h 15FFFFh

...

512 200000h 200FFFh 336 150000h 150FFFh

511 1FF000h 1FFFFFh

335 14F000h 14FFFFh

...

496 1F0000h 1F0FFFh 320 140000h 140FFFh

495 1EF000h 1EFFFFh

319 13F000h 13FFFFh

...

480 1E0000h 1E0FFFh 304 130000h 130FFFh

479 1DF000h 1DFFFFh

303 12F000h 12FFFFh

...

464 1D0000h 1D0FFFh 288 120000h 120FFFh

Table 4. Memory organization (cont inued)

Sector Subsector Address range Sector Subsector Address rang e

M25PX64 Memory orga ni zation

25/70

287 11F000h 11FFFFh

127 7F000h 7FFFFh

...

272 110000h 110FFFh 112 70000h 70FFFh

271 10F000h 10FFFFh

111 6F000h 6FFFFh

...

256 100000h 100FFFh 96 60000h 60FFFh

255 FF000h FFFFFh

95 5F000h 5FFFFh

...

240 F0000h F0FFFh 80 50000h 50FFFh

239 EF000h EFFFFh

79 4F000h 4FFFFh

...

224 E0000h E0FFFh 64 40000h 40FFFh

223 DF000h DFFFFh

63 3F000h 3FFFFh

...

208 D0000h D0FFFh 48 30000h 30FFFh

207 CF000h CFFFFh

47 2F000h 2FFFFh

...

192 C0000h C0FFFh 32 20000h 20FFFh

191 BF000h BFFFFh

31 1F000h 1FFFFh

...

176 B0000h B0FFFh 16 10000h 10FFFh

175 AF000h AFFFFh

15 0F000h 0FFFFh

...

160 A0000h A0FFFh 4 04000h 04FFFh

159 9F000h 9FFFFh 3 03000h 03FFFh

...

2 02000h 02FFFh

144 90000h 90FFFh 1 01000h 01FFFh

143 8F000h 8FFFFh 0 00000h 00FFFh

...

128 80000h 80FFFh

Table 4. Memory organization (cont inued)

Sector Subsector Address range Sector Subsector Address rang e

Instructions M25PX64

26/70

6 Instructions

All instructions, addresses and data are shifted in and out of the device, most significant bit

first.

Serial data input(s) DQ0 (DQ1) is (are) sampled on the first rising edge of Serial Clock (C)

after Chip Select (S) is driven Low. Then, the one-byte instruction code must be shifted in to

the device, most significant bit first, on serial data input(s) DQ0 (DQ1), each bit being

latched on the rising edges of Serial Clock (C).

The instruction set is listed in Table 5.

Every instruction sequence starts with a one-byte instruction code. Depending on the

instruction, this might be followed by address bytes, or by data bytes, or by both or none.

In the case of a read data bytes (READ), read data bytes at higher speed (FAST_READ),

dual output fast read (DOFR), read OTP (ROTP), read lock registers (RDLR), read status

instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip

Select (S) can be driven High after any bit of the data-out sequence is being shifted out.

In the case of a page program (PP), program OTP (POTP), dual input fast program (DIFP),

subsector erase (SSE), sector erase (SE), bulk erase (BE), write status register (WRSR),

write to lock register (WRLR), write enable (WREN), write disable (WRDI) or deep power-

down (DP) instruction, Chip Select (S) must be driven High exactly at a byte boundary,

otherwise the instruction is rejected, and is not executed. That is, Chip Select (S) must

driven High when the number of clock pulses after Chip Select (S) being driven Low is an

exact multiple of eight.

All attempts to access the memory array during a write status register cycle, program cycle

or erase cycle are ignored, and the internal write status register cycle, program cycle or

erase cycle continues unaffected.

Note: Output Hi-Z is defined as t he point where data out is no lo nger dri ven.

M25PX64 Instructions

27/70

Table 5. I n stru ction se t

Instruction Description One-b yte instructi on code Address

bytes Dummy

bytes Data

bytes

WREN Write enable 0000 0110 06h 0 0 0

WRDI Write disable 0000 0100 04h 0 0 0

RDID Read identification

1001 1111 9Fh 0 0 1 to 20

1001 1110 9Eh 0 0 1 to 3

RDSR Read status register 0000 0101 05h 0 0 1 to ∞

WRSR Write status register 0000 0001 01h 0 0 1

WRLR Write to lock register 1110 0101 E5h 3 0 1

RDLR Read lock register 1110 1000 E8h 3 0 1

READ Read data bytes 0000 0011 03h 3 0 1 to ∞

FAST_READ Read data bytes at higher speed 0000 1011 0Bh 3 1 1 to ∞

DOFR Dual output fast read 0011 1011 3Bh 3 1 1 to ∞

ROTP Read OTP (read 64 bytes of OTP

area) 0100 1011 4Bh 3 1 1 to 65

POTP Program OTP (program 64 bytes of

OTP area) 0100 0010 42h 3 0 1 to 65

PP Page program 0000 0010 02h 3 0 1 to 256

DIFP Dual input fast program 1010 0010 A2h 3 0 1 to 256

SSE Subsector erase 0010 0000 20h 3 0 0

SE Sector erase 1101 1000 D8h 3 0 0

BE Bulk erase 1100 0111 C7h 0 0 0

DP Deep power-down 1011 1001 B9h 0 0 0

RDP Release from deep power-down 1010 1011 ABh 0 0 0

Instructions M25PX64

28/70

6.1 Write enable (WREN)

The write enable (WREN) instruction (Figure 9) sets the write enable latch (WEL) bit.

The write enable latch (WEL) bit must be set prior to every page program (PP), dual input

fast program (DIFP), program OTP (POTP), write to lock register (WRLR), subsector erase

(SSE), sector erase (SE), bulk erase (BE) and write status register (WRSR) instruction.

The write enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the

instruction code, and then driving Chip Select (S) High.

Fig u re 9. Write enable (WRE N) instruction sequence

DQ0

AI13731

DQ1

21 34567

High Impedance

Instruction

M25PX64 Instructions

29/70

6.2 Write disable (WRDI)

The write disable (WRDI) instruction (Figure 10) resets the write enable latch (WEL) bit.

The write disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the

instruction code, and then driving Chip Select (S) High.

The write enable latch (WEL) bit is reset under the following conditions:

Power-up

Write disable (WRDI) instruction completion

Write status register (WRSR) instruction completion

Write to lock register (WRLR) instruction completion

Page program (PP) instruction completion

Dual input fast program (DIFP) instruction completion

Program OTP (POTP) instruction completion

Subsector erase (SSE) instruction completion

Sector erase (SE) instruction completion

Bulk erase (BE) instruction completion

Figure 10. W rite disable (WRDI) instruction sequence

DQ0

AI13732

DQ1

21 34567

High Impedance

Instruction

Instructions M25PX64

30/70

6.3 Read identification (RDID)

The read identification (RDID) instruction allows to read the device identification data:

Manufacturer identification (1 byte)

Device identification (2 bytes)

A unique ID code (UID) (17 bytes, of which 16 available upon customer request).

The manufacturer identification is assigned by JEDEC, and has the value 20h for Numonyx.

The device identification is assigned by the device manufacturer, and indicates the memory

type in the first byte (71h), and the memory capacity of the device in the second byte (17h).

The UID contains the length of the following data in the first byte (set to 10h) and 16 bytes of

the optional customized factory data (CFD) content. The CFD bytes are read-only and can

be programmed with customers data upon their demand. If the customers do not make

requests, the devices are shipped with all the CFD bytes programmed to zero (00h).

Any read identification (RDID) instruction while an erase or program cycle is in progress, is

not decoded, and has no effect on the cycle that is in progress.

The read identification (RDID) instruction should not be issued while the device is in deep

power-down mode.

The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code

for the instruction is shifted in. After this, the 24-bit device identification, stored in the

memory, the 8-bit CFD length followed by 16 bytes of CFD content will be shifted out on

serial data output (DQ1). Each bit is shifted out during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 11.

The read identification (RDID) instruction is terminated by driving Chip Select (S) High at

any time during data output.

When Chip Select (S) is driven High, the device is put in the standby power mode. Once in

the standby power mode, the device waits to be selected, so that it can receive, decode and

execute instructions.

Table 6. R ea d identification (RDID) data -out sequence

Manufacturer ide n tificat ion Device identification UID

Memory type Memory capacity CFD length CFD content

20h 71h 17h 10h 16 bytes

M25PX64 Instructions

31/70

Figure 11. R ead ide ntification (RDID) instruction seque nce and data-out seque nce

DQ0

213456789101112131415

Instruction

AI06809d

DQ1

Manufacturer identification

High Impedance

MSB

Device identification

MSB

15 14 13 3 2 1 0

16 17 18 28 29 30 31

MSB

UID

Instructions M25PX64

32/70

6.4 Read st atus register (RDSR)

The read status register (RDSR) instruction allows the status register to be read. The status

is in progress. When one of these cycles is in progress, it is recommended to check the

write in progress (WIP) bit before sending a new instruction to the device. It is also possible

to read the status register continuously, as shown in Figure 12.

The status and control bits of the status register are as follows:

6.4.1 WIP bit

The write in progress (WIP) bit indicates whether the memory is busy with a write status

‘0’ no such cycle is in progress.

6.4.2 WEL bit

The write enable latch (WEL) bit indicates the status of the internal write enable latch. When

set to ‘1’ the internal write enable latch is set, when set to ‘0’ the internal write enable latch is

reset and no write status register, program or erase instruction is accepted.

6.4.3 BP2, BP1, BP0 bit s

The block protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the area to

be software protected against program and erase instructions. These bits are written with

the write status register (WRSR) instruction. When one or more of the block protect (BP2,

BP1, BP0) bits is set to ‘1’, the relevant memory area (as defined in Table 3) becomes

protected against page program (PP) and sector erase (SE) instructions. The block protect

(BP2, BP1, BP0) bits can be written provided that the hardware protected mode has not

been set. The bulk erase (BE) instruction is executed if, and only if, all block protect (BP2,

BP1, BP0) bits are 0.

Table 7. Stat u s register fo rm at

b7 b0

SRWD 0 TB BP2 BP1 BP0 WEL WIP

Status register write protect

Top/bottom bit

Block protect bits

Write enable latch bit

Write in progress bit

M25PX64 Instructions

33/70

6.4.4 Top/bottom bit

The top/bottom (TB) bit is non-volatile. It can be set and reset with the write status register

(WRSR) instruction provided that the write enable (WREN) instruction has been issued. The

top/bottom (TB) bit is used in conjunction with the block protect (BP0, BP1, BP2) bits to

determine if the protected area defined by the block protect bits starts from the top or the

bottom of the memory array:

When top/bottom bit is reset to ‘0’ (default value), the area protected by the block

protect bits starts from the top of the memory array (see Table 3: Protected area s i zes)

When top/bottom bit is set to ‘1’, the area protected by the block protect bits starts from

the bottom of the memory array (see Table 3: P rotected area s i zes).

The top/bottom bit cannot be written when the SRWD bit is set to ‘1’ and the W pin is driven

Low.

6.4.5 SRWD bit

The status register write disable (SRWD) bit is operated in conjunction with the write protect

(W/VPP) signal. The status register write disable (SRWD) bit and the write protect (W/VPP)

signal allow the device to be put in the hardware protected mode (when the status register

write disable (SRWD) bit is set to ‘1’, and write protect (W/VPP) is driven Low). In this mode,

the non-volatile bits of the status register (SRWD, BP2, BP1, BP0) become read-only bits

and the write status register (WRSR) instruction is no longer accepted for execution.

Figure 12. Read status regist er (RDSR) instruction sequence and data-out sequence

DQ0

21 3456789101112131415

Instruction

AI13734

DQ1 76543210

Status register out

High Impedance

MSB

76543210

Status register out

MSB

Instructions M25PX64

34/70

6.5 Write status register (WRSR)

The write status register (WRSR) instruction allows new values to be written to the status

been executed. After the write enable (WREN) instruction has been decoded and executed,

the device sets the write enable latch (WEL).

The write status register (WRSR) instruction is entered by driving Chip Select (S) Low,

followed by the instruction code and the data byte on serial data input (DQ0).

The instruction sequence is shown in Figure 13.

The write status register (WRSR) instruction has no effect on b6, b1 and b0 of the status

Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.

If not, the write status register (WRSR) instruction is not executed. As soon as Chip Select

(S) is driven High, the self-timed write status register cycle (whose duration is tW) is initiated.

While the write status register cycle is in progress, the status register may still be read to

check the value of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during

the self-timed write status register cycle, and is 0 when it is completed. When the cycle is

completed, the write enable latch (WEL) is reset.

The write status register (WRSR) instruction allows the user to change the values of the

block protect (BP2, BP1, BP0) bits, to define the size of the area that is to be treated as

read-only, as defined in Table 3. The write status register (WRSR) instruction also allows the

user to set and reset the status register write disable (SRWD) bit in accordance with the

Write Protect (W/VPP) signal. The status register write disable (SRWD) bit and Write Protect

(W/VPP) signal allow the device to be put in the hardware protected mode (HPM). The write

status register (WRSR) instruction is not executed once the hardware protected mode

(HPM) is entered.

Figure 13. Write sta tus register (WRSR) instruction sequence

DQ0

AI13735

DQ1

21 3456789101112131415

High Impedance

Instruction Status

765432 0

MSB

M25PX64 Instructions

35/70

The protection features of the device are summarized in Table 8.

When the status register write disable (SRWD) bit of the status register is 0 (its initial

delivery state), it is possible to write to the status register provided that the write enable latch

(WEL) bit has previously been set by a write enable (WREN) instruction, regardless of the

whether Write Protect (W/VPP) is driven High or Low.

When the status register write disable (SRWD) bit of the status register is set to ‘1’, two

cases need to be considered, depending on the state of Write Protect (W/VPP):

If Write Protect (W/VPP) is driven High, it is possible to write to the status register

provided that the write enable latch (WEL) bit has previously been set by a write enable

(WREN) instruction.

If write protect (W/VPP) is driven Low, it is not possible to write to the status register

even if the write enable latch (WEL) bit has previously been set by a write enable

(WREN) instruction (attempts to write to the status register are rejected, and are not

accepted for execution). As a consequence, all the data bytes in the memory area that

are software protected (SPM) by the block protect (BP2, BP1, BP0) bits of the status

Regardless of the order of the two events, the hardware protected mode (HPM) can be

entered:

by setting the status register write disable (SRWD) bit after driving Write Protect

(W/VPP) Low

or by driving Write Protect (W/VPP) Low after setting the status register write disable

(SRWD) bit.

The only way to exit the hardware protected mode (HPM) once entered is to pull Write

Protect (W/VPP) High.

If Write Protect (W/VPP) is permanently tied High, the hardware protected mode (HPM) can

never be activated, and only the software protected mode (SPM), using the block protect

(BP2, BP1, BP0) bits of the status register, can be used.

Table 8. Protection modes

W/VPP

signal SRWD

bit Mode Write protection of

the status register Memory content

Pr o t ec t ed ar ea (1)

1. As defined by the values in the block protect (BP2, BP1, BP0) bits of the status register, as shown in

Table 3.

Un prot ec t ed area(1)

Software

protected

(SPM)

Status register is

writable (if the

WREN instruction

has set the WEL

bit)

The values in the

SRWD, BP2, BP1

and BP0 bits can be

changed

Protected against

page program,

sector erase and

bulk erase

Ready to accept

page program and

sector erase

instructions

Hardware

protected

(HPM)

Status register is

hardware write

protected

The values in the

SRWD, BP2, BP1

and BP0 bits

cannot be changed

Protected against

page program,

sector erase and

bulk erase

Ready to accept

page program and

sector erase

instructions

Instructions M25PX64

36/70

6.6 Read data bytes (READ)

The device is first selected by driving Chip Select (S) Low. The instruction code for the read

data bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being

latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that

address, is shifted out on serial data output (DQ1), each bit being shifted out, at a maximum

frequency fR, during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 14.

The first byte addressed can be at any location. The address is automatically incremented

to the next higher address after each byte of data is shifted out. The whole memory can,

therefore, be read with a single read data bytes (READ) instruction. When the highest

address is reached, the address counter rolls over to 000000h, allowing the read sequence

to be continued indefinitely.

The read data bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip

Select (S) can be driven High at any time during data output. Any read data bytes (READ)

instruction, while an erase, program or write cycle is in progress, is rejected without having

any effects on the cycle that is in progress.

Figure 14. Re ad data bytes (REA D) instructi on sequ ence and data-out sequence

1. Address bit A23 is don’t care.

DQ0

AI13736b

DQ1

21 345678910 2829303132333435

2221 3210

36 37 38

76543 1 7

High Impedance Data out 1

Instruction 24-bit address (1)

MSB

Data out 2

M25PX64 Instructions

37/70

6.7 Read data bytes at higher speed (FAST_READ)

The device is first selected by driving Chip Select (S) Low. The instruction code for the read

data bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23-

A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).

Then the memory contents, at that address, are shifted out on serial data output (DQ1) at a

maximum frequency fC, during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 15.

The first byte addressed can be at any location. The address is automatically incremented

to the next higher address after each byte of data is shifted out. The whole memory can,

therefore, be read with a single read data bytes at higher speed (FAST_READ) instruction.

When the highest address is reached, the address counter rolls over to 000000h, allowing

the read sequence to be continued indefinitely.

The read data bytes at higher speed (FAST_READ) instruction is terminated by driving Chip

Select (S) High. Chip Select (S) can be driven High at any time during data output. Any read

data bytes at higher speed (FAST_READ) instruction, while an erase, program or write

cycle is in progress, is rejected without having any effects on the cycle that is in progress.

Fig u re 15. Read d ata by tes at higher speed (FAST_READ) i nstruction sequence

and data-o ut sequenc e

1. Address bit A23 is don’t care.

DQ0

AI13737b

DQ1

21 345678910 28293031

2221 3210

High Impedance

Instruction 24-bit address (1)

DQ0

DQ1

32 33 34 36 37 38 39 40 41 42 43 44 45 46

765432 0

DATA OUT 1

Dummy byte

MSB

76543210

DATA OUT 2

MSB MSB

765432 0

Instructions M25PX64

38/70

6.8 Dual output fast read (DOFR)

The dual output fast read (DOFR) instruction is very similar to the read data bytes at higher

speed (FAST_READ) instruction, except that the data are shifted out on two pins (pin DQ0

and pin DQ1) instead of only one. Outputting the data on two pins instead of one doubles

the data transfer bandwidth compared to the read data bytes at higher speed (FAST_READ)

instruction.

The device is first selected by driving Chip Select (S) Low. The instruction code for the dual

output fast read instruction is followed by a 3-byte address (A23-A0) and a dummy byte,

each bit being latched-in during the rising edge of Serial Clock (C). Then the memory

contents, at that address, are shifted out on DQ0 and DQ1 at a maximum frequency fC,

during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 16.

The first byte addressed can be at any location. The address is automatically incremented

to the next higher address after each byte of data is shifted out on DQ0 and DQ1. The whole

memory can, therefore, be read with a single dual output fast read (DOFR) instruction.

When the highest address is reached, the address counter rolls over to 00 0000h, so that

the read sequence can be continued indefinitely.

Figure 16. Dua l output fast read instruction sequenc e

1. Address bit A23 is don’t care.

21 345678910 282930310

23 22 21 3 2 1 0

Mode 3

Mode 2

DQ0

DQ1 High Impedance

Instruction 24-bit address

(1)

DQ0

DQ1

32 33 34 36 37 38 39 40 41 42 43 44 45 46

753175 1

DATA OUT 1

Dummy byte

MSB

7531 7531

MSB MSB

6420 64 02

642064 02

MSB MSB

DATA OUT 2 DATA OUT 3 DATA OUT n

ai13574b

M25PX64 Instructions

39/70

6.9 Read lock register (RDLR)

The device is first selected by driving Chip Select (S) Low. The instruction code for the read

lock register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any

location inside the concerned sector. Each address bit is latched-in during the rising edge of

Serial Clock (C). Then the value of the lock register is shifted out on serial data output

(DQ1), each bit being shifted out, at a maximum frequency fC, during the falling edge of

Serial Clock (C).

The instruction sequence is shown in Figure 17.

The read lock register (RDLR) instruction is terminated by driving Chip Select (S) High at

any time during data output.

Any read lock register (RDLR) instruction, while an erase, program or write cycle is in

progress, is rejected without having any effects on the cycle that is in progress.

Figure 17. Re ad lock register (RDLR) instruct i on sequ ence and data-out sequence

Table 9. Lock register out(1)

1. Values of (b1, b0) after power-up are defined in Section 7: Power-up and power-down.

Bit Bit name Val ue Function

b7-b2 Reserved

b1 Sector lock down

‘1’

The write lock and lock down bits cannot be changed. Once a

‘1’ is written to the lock down bit it cannot be cleared to ‘0’,

except by a power-up.

‘0’ The write lock and lock down bits can be changed by writing

new values to them.

b0 Sector write lock

‘1’ Write, program and erase operations in this sector will not be

executed. The memory contents will not be changed.

‘0’ Write, program and erase operations in this sector are

executed and will modify the sector contents.

AI13738

DQ1

21 345678910 2829303132333435

2221 3210

36 37 38

76543 10

High Impedance Lock register out

Instruction 24-bit address

MSB

Instructions M25PX64

40/70

6.10 Read OTP (R OTP)

The device is first selected by driving Chip Select (S) Low. The instruction code for the read

OTP (ROTP) instruction is followed by a 3-byte address (A23- A0) and a dummy byte. Each

bit is latched in on the rising edge of Serial Clock (C).

Then the memory contents at that address are shifted out on serial data output (DQ1). Each

bit is shifted out at the maximum frequency, fCmax, on the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 18.

The address is automatically incremented to the next higher address after each byte of data

is shifted out.

There is no rollover mechanism with the read OTP (ROTP) instruction. This means that the

read OTP (ROTP) instruction must be sent with a maximum of 65 bytes to read, since once

the 65th byte has been read, the same (65th) byte keeps being read on the DQ1 pin.

The read OTP (ROTP) instruction is terminated by driving Chip Select (S) High. Chip Select

(S) can be driven High at any time during data output. Any read OTP (ROTP) instruction

issued while an erase, program or write cycle is in progress, is rejected without having any

effect on the cycle that is in progress.

Figure 18. Re ad OTP (R OTP) instruction and data-o ut se quenc e

1. A23 to A7 are don't care.

2. 1 ≤ n ≤ 65.

DQ0

AI13573

DQ1

21 345678910 28293031

2221 3210

High Impedance

Instruction 24-bit address

DQ0

DQ1

32 33 34 36 37 38 39 40 41 42 43 44 45 46

765432 0

DATA OUT 1

Dummy byte

MSB

76543210

DATA OUT n

MSB MSB

765432 0

M25PX64 Instructions

41/70

6.11 Page program (PP)

The page program (PP) instruction allows bytes to be programmed in the memory

(changing bits from ‘1’ to ‘0’). Before it can be accepted, a write enable (WREN) instruction

must previously have been executed. After the write enable (WREN) instruction has been

decoded, the device sets the write enable latch (WEL).

The page program (PP) instruction is entered by driving Chip Select (S) Low, followed by

the instruction code, three address bytes and at least one data byte on serial data input

(DQ0). If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that

goes beyond the end of the current page are programmed from the start address of the

same page (from the address whose 8 least significant bits (A7-A0) are all zero). Chip

Select (S) must be driven Low for the entire duration of the sequence.

The instruction sequence is shown in Figure 19.

If more than 256 bytes are sent to the device, previously latched data are discarded and the

last 256 data bytes are guaranteed to be programmed correctly within the same page. If less

than 256 data bytes are sent to device, they are correctly programmed at the requested

addresses without having any effects on the other bytes of the same page.

For optimized timings, it is recommended to use the page program (PP) instruction to

program all consecutive targeted bytes in a single sequence versus using several page

program (PP) sequences with each containing only a few bytes (see Table 18: AC

characteristics).

Chip Select (S) must be driven High after the eighth bit of the last data byte has been

latched in, otherwise the page program (PP) instruction is not executed.

As soon as Chip Select (S) is driven High, the self-timed page program cycle (whose

duration is tPP) is initiated. While the page program cycle is in progress, the status register

may be read to check the value of the write in progress (WIP) bit. The write in progress

(WIP) bit is 1 during the self-timed page program cycle, and is 0 when it is completed. At

some unspecified time before the cycle is completed, the write enable latch (WEL) bit is

reset.

A page program (PP) instruction applied to a page which is protected by the block protect

(BP2, BP1, BP0) bits (see Table 3 and Table 4) is not executed.

Instructions M25PX64

42/70

Figure 19. P age program (PP ) inst ructi on sequence

1. Address bit A23 is don’t care.

DQ0

AI13739b

4241 43 44 45 46 47 48 49 50 52 53 54 5540

DQ0

21 345678910 2829303132333435

2221 3210

36 37 38

Instruction 24-bit address

(1)

765432 0

Data byte 1

765432 0

Data byte 2

765432 0

Data byte 3 Data byte 256

2079

2078

2077

2076

2075

2074

2073

765432 0

2072

MSB MSB

MSB MSB MSB

M25PX64 Instructions

43/70

6.12 Dual input fast program (DIFP)

The dual input fast program (DIFP) instruction is very similar to the page program (PP)

instruction, except that the data are entered on two pins (pin DQ0 and pin DQ1) instead of

only one. Inputting the data on two pins instead of one doubles the data transfer bandwidth

compared to the page program (PP) instruction.

The dual input fast program (DIFP) instruction is entered by driving Chip Select (S) Low,

followed by the instruction code, three address bytes and at least one data byte on serial

data input (DQ0).

If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes

beyond the end of the current page are programmed from the start address of the same

page (from the address whose 8 least significant bits (A7-A0) are all zero). Chip Select (S)

must be driven Low for the entire duration of the sequence.

The instruction sequence is shown in Figure 20.

If more than 256 bytes are sent to the device, previously latched data are discarded and the

last 256 data bytes are guaranteed to be programmed correctly within the same page. If less

than 256 data bytes are sent to device, they are correctly programmed at the requested

addresses without having any effects on the other bytes in the same page.

For optimized timings, it is recommended to use the dual input fast program (DIFP)

instruction to program all consecutive targeted bytes in a single sequence rather to using

several dual input fast program (DIFP) sequences each containing only a few bytes (see

Tab l e 18: A C charac t e ri s tics).

Chip Select (S) must be driven High after the eighth bit of the last data byte has been

latched in, otherwise the dual input fast program (DIFP) instruction is not executed.

As soon as Chip Select (S) is driven High, the self-timed page program cycle (whose

duration is tPP) is initiated. While the dual input fast program (DIFP) cycle is in progress, the

status register may be read to check the value of the write in progress (WIP) bit. The write in

progress (WIP) bit is 1 during the self-timed page program cycle, and 0 when it is

completed. At some unspecified time before the cycle is completed, the write enable latch

(WEL) bit is reset.

A dual input fast program (DIFP) instruction applied to a page that is protected by the block

protect (BP2, BP1, BP0) bits (see Table 2 and Table 3) is not executed.

Instructions M25PX64

44/70

Figure 20. Dua l i nput f as t progra m (DIFP) instruct i on sequence

1. Address bit A23 is don’t care.

AI14229

DQ0

21 345678910 28293031

22 21 3 2 1 0

Instruction 24-bit address

DQ0

3433 35 36 37 38 39 40 41 42 44 45 46 4732 43

642064 0

2642064 0

26420

MSB MSB MSB

DQ1 High Impedance

6420

DQ1 7531 1753 753

MSB

31 1

MSB

7531 7531

MSB

DATA IN 1 DATA IN 4 DATA IN 5 DATA IN 256DATA IN 3DATA IN 2

M25PX64 Instructions

45/70

6.13 Program OTP instruction (POTP)

The program OTP instruction (POTP) is used to program at most 64 bytes to the OTP

memory area (by changing bits from ‘1’ to ‘0’, only). Before it can be accepted, a write

enable (WREN) instruction must previously have been executed. After the write enable

(WREN) instruction has been decoded, the device sets the write enable latch (WEL) bit.

The program OTP instruction is entered by driving Chip Select (S) Low, followed by the

instruction opcode, three address bytes and at least one data byte on serial data input

(DQ0).

Chip Select (S) must be driven High after the eighth bit of the last data byte has been

latched in, otherwise the program OTP instruction is not executed.

There is no rollover mechanism with the program OTP (POTP) instruction. This means that

the program OTP (POTP) instruction must be sent with a maximum of 65 bytes to program,

once all 65 bytes have been latched in, any following byte will be discarded.

The instruction sequence is shown in Figure 21.

As soon as Chip Select (S) is driven High, the self-timed page program cycle (whose

duration is tPP) is initiated. While the program OTP cycle is in progress, the status register

may be read to check the value of the write in progress (WIP) bit. The write in progress

(WIP) bit is 1 during the self-timed program OTP cycle, and it is 0 when it is completed. At

some unspecified time before the cycle is complete, the write enable latch (WEL) bit is

reset.

To lock the OTP memory:

Bit 0 of the OTP control byte, that is byte 64, (see Figure 22) is used to permanently lock the

OTP memory array.

When bit 0 of byte 64 = ’1’, the 64 bytes of the OTP memory array can be programmed.

When bit 0 of byte 64 = ‘0’, the 64 bytes of the OTP memory array are read-only and

cannot be programmed anymore.

Once a bit of the OTP memory has been programmed to ‘0’, it can no longer be set to ‘1’.

Therefore, as soon as bit 0 of byte 64 (control byte) is set to ‘0’, the 64 bytes of the OTP

memory array become read-only in a permanent way.

Any program OTP (POTP) instruction issued while an erase, program or write cycle is in

progress is rejected without having any effect on the cycle that is in progress.

Instructions M25PX64

46/70

Figure 21. Program OT P (POTP ) inst ruct ion seque nce

1. A23 to A7 are don't care.

2. 1 ≤ n ≤ 65.

Figure 22. How to permanently lock the 64 OTP bytes

DQ0

AI13575

4241 43 44 45 46 47 48 49 50 52 53 54 5540

DQ0

21 345678910 2829303132333435

2221 3210

36 37 38

Instruction 24-bit address

765432 0

Data byte 1

765432 0

Data byte 2

765432 0

Data byte 3 Data byte n

765432 0

MSB MSB

MSB MSB MSB

Byte

0Byte

1Byte

2Byte

Byte

X X X X X X X bit 0

OTP control byte64 data bytes

Bit 1 to bit 7 are not programmable

When bit 0 = 0

the 64 OTP bytes

become read only

ai13587

M25PX64 Instructions

47/70

6.14 Write to lock register (WRLR)

The write to lock register (WRLR) instruction allows bits to be changed in the lock registers.

Before it can be accepted, a write enable (WREN) instruction must previously have been

executed. After the write enable (WREN) instruction has been decoded, the device sets the

write enable latch (WEL).

The write to lock register (WRLR) instruction is entered by driving Chip Select (S) Low,

followed by the instruction code, three address bytes (pointing to any address in the

targeted sector and one data byte on serial data input (DQ0). The instruction sequence is

shown in Figure 23. Chip Select (S) must be driven High after the eighth bit of the data byte

has been latched in, otherwise the write to lock register (WRLR) instruction is not executed.

Lock register bits are volatile, and therefore do not require time to be written. When the write

to lock register (WRLR) instruction has been successfully executed, the write enable latch

(WEL) bit is reset after a delay time less than tSHSL minimum value.

Any write to lock register (WRLR) instruction, while an erase, program or write cycle is in

progress, is rejected without having any effects on the cycle that is in progress.

Fig ur e 23. Writ e to lock register (WRLR) i n struction sequence

Table 10 . Lock regist er in(1)

1. Values of (b1, b0) after power-up are defined in Section 7: Power-up and power-down.

Sector Bit Value

All sectors

b7-b2 ‘0’

b1 Sector lock down bit value (refer to Table 9)

b0 Sector write lock bit value (refer to Table 9)

AI13740

DQ0

21 345678910 2829303132333435

2221 3210

36 37 38

Instruction 24-bit address

765432 0

Lock register

MSB MSB

Instructions M25PX64

48/70

6.15 Subsector erase (SSE)

The subsector erase (SSE) instruction sets to ‘1’ (FFh) all bits inside the chosen subsector.

Before it can be accepted, a write enable (WREN) instruction must previously have been

executed. After the write enable (WREN) instruction has been decoded, the device sets the

write enable latch (WEL).

The subsector erase (SSE) instruction is entered by driving Chip Select (S) Low, followed by

the instruction code, and three address bytes on serial data input (DQ0). Any address inside

the subsector (see Table 4) is a valid address for the subsector erase (SSE) instruction.

Chip Select (S) must be driven Low for the entire duration of the sequence.

The instruction sequence is shown in Figure 24.

Chip Select (S) must be driven High after the eighth bit of the last address byte has been

latched in, otherwise the subsector erase (SSE) instruction is not executed. As soon as Chip

Select (S) is driven High, the self-timed subsector erase cycle (whose duration is tSSE) is

initiated. While the subsector erase cycle is in progress, the status register may be read to

check the value of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during

the self-timed subsector erase cycle, and is 0 when it is completed. At some unspecified

time before the cycle is complete, the write enable latch (WEL) bit is reset.

A subsector erase (SSE) instruction issued to a sector that is hardware or software

protected, is not executed.

Any subsector erase (SSE) instruction, while an erase, program or write cycle is in progress,

is rejected without having any effects on the cycle that is in progress.

Fig ur e 24. S u bsecto r eras e (SSE) instruction sequence

1. Address bit A23 is don’t care.

24-bit address

(1)

DQ0

AI13741b

21 3456789 293031

Instruction

23 22 20

MSB

M25PX64 Instructions

49/70

6.16 Sector erase (SE)

The sector erase (SE) instruction sets to ‘1’ (FFh) all bits inside the chosen sector. Before it

can be accepted, a write enable (WREN) instruction must previously have been executed.

After the write enable (WREN) instruction has been decoded, the device sets the write

enable latch (WEL).

The sector erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the

instruction code, and three address bytes on serial data input (DQ0). Any address inside the

sector (see Table 4) is a valid address for the sector erase (SE) instruction. Chip Select (S)

must be driven Low for the entire duration of the sequence.

The instruction sequence is shown in Figure 25.

Chip Select (S) must be driven High after the eighth bit of the last address byte has been

latched in, otherwise the sector erase (SE) instruction is not executed. As soon as Chip

Select (S) is driven High, the self-timed sector erase cycle (whose duration is tSE) is

initiated. While the sector erase cycle is in progress, the status register may be read to

check the value of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during

the self-timed sector erase cycle, and is 0 when it is completed. At some unspecified time

before the cycle is completed, the write enable latch (WEL) bit is reset.

A sector erase (SE) instruction applied to a page which is protected by the block protect

(BP2, BP1, BP0) bits (see Table 3 and Table 4) is not executed.

Figu r e 25. Sector erase (S E) instruction sequenc e

1. Address bit A23 is don’t care.

24-bit address

(1)

DQ1

AI13742b

21 3456789 293031

Instruction

23 22 2 0

MSB

Instructions M25PX64

50/70

6.17 Bulk erase (BE)

The bulk erase (BE) instruction sets all bits to ‘1’ (FFh). Before it can be accepted, a write

enable (WREN) instruction must previously have been executed. After the write enable

(WREN) instruction has been decoded, the device sets the write enable latch (WEL).

The bulk erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the

instruction code on serial data input (DQ0). Chip Select (S) must be driven Low for the entire

duration of the sequence.

The instruction sequence is shown in Figure 26.

Chip Select (S) must be driven High after the eighth bit of the instruction code has been

latched in, otherwise the bulk erase instruction is not executed. As soon as Chip Select (S)

is driven High, the self-timed bulk erase cycle (whose duration is tBE) is initiated. While the

bulk erase cycle is in progress, the status register may be read to check the value of the

write in progress (WIP) bit. The write in progress (WIP) bit is 1 during the self-timed bulk

erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is

completed, the write enable latch (WEL) bit is reset.

The bulk erase (BE) instruction is executed only if all block protect (BP2, BP1, BP0) bits are

0. The bulk erase (BE) instruction is ignored if one, or more, sectors are protected.

Fig u re 26. Bu lk erase (B E) instruction sequence

DQ0

AI13743

21 345670

Instruction

M25PX64 Instructions

51/70

6.18 Deep power-down (DP)

Executing the deep power-down (DP) instruction is the only way to put the device in the

lowest consumption mode (the deep power-down mode). It can also be used as a software

protection mechanism, while the device is not in active use, as in this mode, the device

ignores all write, program and erase instructions.

Driving Chip Select (S) High deselects the device, and puts the device in the standby power

mode (if there is no internal cycle currently in progress). But this mode is not the deep

power-down mode. The deep power-down mode can only be entered by executing the deep

power-down (DP) instruction, subsequently reducing the standby current (from ICC1 to ICC2,

as specified in Table 17).

To take the device out of deep power-down mode, the release from deep power-down

(RDP) instruction must be issued. No other instruction must be issued while the device is in

deep power-down mode.

The deep power-down mode automatically stops at power-down, and the device always

powers up in the standby power mode.

The deep power-down (DP) instruction is entered by driving Chip Select (S) Low, followed

by the instruction code on serial data input (DQ0). Chip Select (S) must be driven Low for

the entire duration of the sequence.

The instruction sequence is shown in Figure 27.

Chip Select (S) must be driven High after the eighth bit of the instruction code has been

latched in, otherwise the deep power-down (DP) instruction is not executed. As soon as

Chip Select (S) is driven High, it requires a delay of tDP before the supply current is reduced

to ICC2 and the deep power-down mode is entered.

Any deep power-down (DP) instruction, while an erase, program or write cycle is in

progress, is rejected without having any effects on the cycle that is in progress.

Figure 27. De ep power-down (DP) inst ruct ion seque nce

DQ0

AI13744

21 345670t

Deep power-down mode

Standby mode

Instruction

Instructions M25PX64

52/70

6.19 Release from deep power-down (RDP)

Once the device has entered the deep power-down mode, all instructions are ignored

except the release from deep power-down (RDP) instruction. Executing this instruction

takes the device out of the deep power-down mode.

The release from deep power-down (RDP) instruction is entered by driving Chip Select (S)

Low, followed by the instruction code on serial data input (DQ0). Chip Select (S) must be

driven Low for the entire duration of the sequence.

The instruction sequence is shown in Figure 28.

The release from deep power-down (RDP) instruction is terminated by driving Chip Select

(S) High. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is driven

Low, cause the instruction to be rejected, and not executed.

After Chip Select (S) has been driven High, followed by a delay, tRDP

, the device is put in the

standby mode. Chip Select (S) must remain High at least until this period is over. The device

waits to be selected, so that it can receive, decode and execute instructions.

Any release from deep power-down (RDP) instruction, while an erase, program or write

cycle is in progress, is rejected without having any effects on the cycle that is in progress.

Figure 28. Re leas e from deep power-down (RDP) inst ruct i on sequ ence

DQ0

AI13745

21 345670tRDP

Standby mode

Deep power-down mode

DQ1 High Impedance

Instruction

M25PX64 Power-up and power- down

53/70

7 Power-up and power-down

At power-up and power-down, the device must not be selected (that is Chip Select (S) must

follow the voltage applied on VCC) until VCC reaches the correct value:

VCC(min) at power-up, and then for a further delay of tVSL

VSS at power-down.

A safe configuration is provided in Section 3: SPI modes.

To avoid data corruption and inadvertent write operations during power-up, a power on reset

(POR) circuit is included. The logic inside the device is held reset while VCC is less than the

power on reset (POR) threshold voltage, VWI – all operations are disabled, and the device

does not respond to any instruction.

Moreover, the device ignores all write enable (WREN), page program (PP), dual input fast

program (DIFP), program OTP (POTP), subsector erase (SSE), sector erase (SE), bulk

erase (BE), write status register (WRSR) and write to lock register (WRLR) instructions until

a time delay of tPUW has elapsed after the moment that VCC rises above the VWI threshold.

However, the correct operation of the device is not guaranteed if, by this time, VCC is still

below VCC(min). No write status register, program or erase instructions should be sent until

the later of:

tPUW after VCC has passed the VWI threshold

tVSL after VCC has passed the VCC(min) level.

These values are specified in Table 11.

If the time, tVSL, has elapsed, after VCC rises above VCC(min), the device can be selected

for read instructions even if the tPUW delay has not yet fully elapsed.

After power-up, the device is in the following state:

The device is in the standby power mode (not the deep power-down mode)

The write enable latch (WEL) bit is reset

The write in progress (WIP) bit is reset

The lock registers are configured as: (write lock bit, lock down bit) = (0,0).

Normal precautions must be taken for supply line decoupling, to stabilize the VCC supply.

Each device in a system should have the VCC line decoupled by a suitable capacitor close

to the package pins (generally, this capacitor is of the order of 100 nF).

At power-down, when VCC drops from the operating voltage, to below the power on reset

(POR) threshold voltage, VWI, all operations are disabled and the device does not respond

to any instruction (the designer needs to be aware that if power-down occurs while a write,

program or erase cycle is in progress, some data corruption may result).

VPPH must be applied only when VCC is stable and in the VCC(min) to VCC(max)

voltage range.

Initial deliv ery state M25PX64

54/70

Figure 29. Power-up tim i ng

8 Initial delivery state

The device is delivered with the memory array erased: all bits are set to ‘1’ (each byte

contains FFh). The status register contains 00h (all status register bits are 0).

Table 11. Power-up timing and VWI threshold

Symbol Parameter Min Max Unit

tVSL(1)

1. These parameters are characterized only.

VCC(min) to S Low 30 μs

tPUW(1) Time delay to write instruction 1 10 ms

VWI(1) Write inhibit voltage 1.5 2.5 V

VCC

AI04009C

VCC(min)

VWI

Reset state

of the

device

Chip selection not allowed

Program, erase and write commands are rejected by the device

tVSL

tPUW

tim

Read access allowed Device fully

accessible

CC(max)

M25PX64 Maximum ratings

55/70

9 Maximum ratings

Stressing the device outside the ratings listed in Table 12: Absolute maximum ratings may

cause permanent damage to the device. These are stress ratings only, and operation of the

device at these, or any other conditions outside those indicated in the operating sections of

this specification, is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect device reliability. Refer also to the Numonyx SURE program

and other relevant quality documents.

Table 12. Absolute maximu m ra tings

Symbol Parameter Min Max Unit

TSTG Storage temperature –65 150 °C

TLEAD Lead temperature during soldering see(1)

1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), and the European

directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.

°C

VIO Input and output voltage (with respect to ground) –0.6 VCC +0.6 V

VCC Supply voltage –0.6 4.0 V

VPP Fast program/erase voltage(2)

2. Avoid applying VPPH to the W/VPP pin during Bulk Erase.

–0.2 10.0 V

VESD Electrostatic discharge voltage (human body model)(3)

3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).

–2000 2000 V

DC and AC parameters M25PX64

56/70

10 DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristics tables that

follow are derived from tests performed under the measurement conditions summarized in

the relevant tables. Designers should check that the operating conditions in their circuit

match the measurement conditions when relying on the quoted parameters.

Table 14. Data Re tention and Endurance

Fig u re 30. AC meas u rement I/ O wavefo rm

Table 13. Operat ing conditions

Symbol Parameter Min Typ Max Unit

Vcc Supply Voltage 2.7 3.6 V

Vphh Supply Voltage on Vpp 8.5 9.5 V

Ambient operating temperature (device grade 6) -40 85

Ambient operating temperature (device grade 3) -40 125

Parameter Condition Min. Max. Unit

Program/Erase

Cycles

Grade 3, Autograde 6,

Grade 6

100000 Cycles per Sector

Data Retention at 55°C 20 years

Table 15 . AC measurement co n ditions

Symbol Parameter Min Max Unit

CLLoad capacitance 30 pF

Input rise and fall times 5 ns

Input pulse voltages 0.2VCC to 0.8VCC V

Input timing reference voltages 0.3VCC to 0.7VCC V

Output timing reference voltages VCC / 2 V

AI07455

0.8VCC

0.2VCC

0.7VCC

0.3VCC

Input and output

timing reference levels

Input levels

0.5VCC

M25PX64 DC and AC paramete rs

57/70

Table 16 . Ca pacitan ce(1)

1. Sampled only, not 100% tested, at TA=25 °C and a frequency of 33 MHz.

Symbol Parameter Tes t condition Min Max Unit

CIN/OUT Input/output capacitance (DQ0/DQ1) VOUT = 0 V 8 pF

CIN Input capacitance (other pins) VIN = 0 V 6 pF

Table 17 . DC ch aracteristics

Symbol Parameter Te st condition (in addition

to thos e i n Table 13)Min Max Unit

ILI Input leakage current ± 2 μA

ILO Output leakage current ± 2 μA

ICC1 Standby current S = VCC, VIN = VSS or VCC 50 μA

ICC2 Deep Power-down current S = VCC, VIN = VSS or VCC 10 μA

ICC3

Operating current (READ)

C = 0.1VCC / 0.9VCC at

75 MHz, DQ1 = open 12 mA

C = 0.1VCC / 0.9VCC at

33 MHz, DQ1 = open 4mA

Operating current (DOFR) C = 0.1VCC / 0.9VCC at

75 MHz, DQ1 = open 15 mA

ICC4

Operating current (PP) S = VCC 15 mA

Operating current (DIFP) S = VCC 15 mA

ICC5 Operating current (WRSR) S = VCC 15 mA

ICC6 Operating current (SE) S = VCC 15 mA

VIL Input low voltage – 0.5 0.3VCC V

VIH Input high voltage 0.7VCC VCC+0.4 V

VOL Output low voltage IOL = 1.6 mA 0.4 V

VOH Output high voltage IOH = –100 μAV

CC–0.2 V

DC and AC parameters M25PX64

58/70

Table 18 . AC ch aracteristics

Test conditions specified in Table 13 and Table 15

Symbol Alt. Parameter Min Typ(1) Max Unit

fCfC

Clock frequency for the following

instructions: DOFR, DIFP, FAST_READ,

SSE, SE, BE, DP, WREN, WRDI, RDID,

RDSR, WRSR, ROTP, PP, POTP,

WRLR, RDLR, RDP

D.C. 75 MHz

fRClock frequency for read instructions D.C. 33 MHz

tCH(2) tCLH Clock High time 6 ns

tCL(2) tCLL Clock Low time 6 ns

tCLCH(3) Clock rise time(4) (peak to peak) 0.1 V/ns

tCHCL(3) Clock fall time(4) (peak to peak) 0.1 V/ns

tSLCH tCSS S active setup time (relative to C) 5 ns

tCHSL S not active hold time (relative to C) 5 ns

tDVCH tDSU Data in setup time 2 ns

tCHDX tDH Data in hold time 5 ns

tCHSH S active hold time (relative to C) 5 ns

tSHCH S not active setup time (relative to C) 5 ns

tSHSL tCSH S deselect time 80 ns

tSHQZ(3) tDIS Output disable time 8 ns

tCLQV tV

Clock Low to Output valid under 30 pF 8 ns

Clock Low to Output valid under 10 pF 6 ns

tCLQX tHO Output hold time 0 ns

tHLCH HOLD setup time (relative to C) 5 ns

tCHHH HOLD hold time (relative to C) 5 ns

tHHCH HOLD setup time (relative to C) 5 ns

tCHHL HOLD hold time (relative to C) 5 ns

tHHQX(3) tLZ HOLD to Output Low-Z 8 ns

tHLQZ(3) tHZ HOLD to Output High-Z 8 ns

tWHSL(5) Write protect setup time 20 ns

tSHWL(5) Write protect hold time 100 ns

tVPPHSL(6) Enhanced program supply voltage High

(VPPH) to Chip Select Low 200 ns

tDP(3) S High to deep power-down mode 3 μs

tRDP(3) S High to standby mode 30 μs

M25PX64 DC and AC paramete rs

59/70

Figure 31. Serial input timing

tWWrite status register cycle time 1.3 15 ms

tPP(7)

Page program cycle time (256 bytes) 0.8

Page program cycle time (n bytes) int(n/8) × 0.025(8)

Program OTP cycle time (64 bytes) 0.2 ms

tSSE Subsector erase cycle time 70 150 ms

tSE Sector erase cycle time 0.7 3 s

tBE Bulk erase cycle time 68 160 s

1. Typical values given for TA = 25° C.

2. tCH + tCL must be greater than or equal to 1/ fC.

3. Value guaranteed by characterization, not 100% tested in production.

4. Expressed as a slew-rate.

5. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.

6. VPPH should be kept at a valid level until the program or erase operation has completed and its result

(success or failure) is known. Avoid applying VPPH to the W/VPP pin during Bulk Erase.

7. When using the page program (PP) instruction to program consecutive bytes, optimized timings are

obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤

256).

8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.

Table 18 . AC ch aracteristics (cont inued)

Test conditions specified in Table 13 and Table 15

Symbol Alt. Parameter Min Typ(1) Max Unit

DQ0

AI13728

MSB IN

DQ1

tDVCH

High Impedance

LSB IN

tSLCH

tCHDX

tCHCL

tCLCH

tSHCH

tSHSL

tCHSHtCHSL

DC and AC parameters M25PX64

60/70

Figure 32. Write protect setup and hold timing during WRSR when SRWD= 1

Figure 33. Hold timing

DQ0

DQ1

High Impedance

W/VPP

tWHSL tSHWL

AI07439c

DQ1

AI13746

DQ0

HOLD

tCHHL

tHLCH

tHHCH

tCHHH

tHHQXtHLQZ

M25PX64 DC and AC paramete rs

61/70

Figure 34. Output timing

Figure 35. V PPH tim i n g

DQ1

AI13729

LSB OUT

DQ0 ADDR.

LSB IN

tSHQZ

tCH

tCL

tQLQH

tQHQL

tCLQX

tCLQV

tCLQX

tCLQV

DQ0

VPP

VPPH

ai13726-b

tVPPHSL

End of command

(identied by WIP polling)

Package mechanical M25PX64

62/70

11 Package mechanical

In order to meet environmental requirements, Numonyx offers these devices in RoHS

packages. These packages have a lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label.

Fig ur e 36. V DFPN 8 (MLP8, ME) 8-lea d very thin dual flat package no le ad,

8 × 6 m m , package outline

1. Drawing is not to scale.

2. The circle in the top view of the package indicates the position of pin 1.

Table 19 . V DFPN 8 (M L P8, ME ) 8-lea d very thin d u al flat package no lead,

8 × 6 mm, package m echanical data

Symbol Millimeters Inches

Typ Min Max Typ Min Max

A 0.85 1.00 0.033 0.039

A1 0.00 0.05 0.000 0.002

b 0.40 0.35 0.48 0.016 0.014 0.019

D 8.00 0.315

D2 5.16 (1)

1. D2 Max must not exceed (D – 2 x K – 2 × L).

0.203

ddd 0.05 0.002

E 6.00 0.236

E2 4.80 0.189

e 1.27 – – 0.050 – –

K0.82 0.032

L 0.50 0.45 0.60 0.020 0.018 0.024

L1 0.15 0.006

N8 8

VDFPN-02

A1 ddd

M25PX64 Packag e mechanical

63/70

Fig ur e 37. V DF P N8 (MLP8, MD) 8-lead very thin du al flat pack age no lea d ,

8 × 6 m m , package outline

1. Drawing is not to scale.

2. The circle in the top view of the package indicates the position of pin 1.

Table 20 . V DFPN 8 (MLP8 , MD) 8-le ad very thin d u al flat package no lead,

8 × 6 mm, package m echanical data

Symbol Millimeters Inches

Typ Min Max Typ Min Max

A 0.85 1.00 0.033 0.039

A1 0.00 0.05 0.000 0.002

b 0.40 0.35 0.48 0.016 0.014 0.019

D 8.00 0.315

D2 4.70 4.725 0.187

ddd 0.05 0.002

E 6.00 0.236

E2 4.80 0.189

e 1.27 – – 0.050 – –

K1.05 0.032

L 0.50 0.45 0.60 0.020 0.018 0.024

L1 0.15 0.006

N8 8

VDFPN-02

A1 ddd

Package mechanical M25PX64

64/70

Figure 38. SO16 wide - 16-lead plastic s mal l outline, 30 0 mils body wi dth, package

outline

1. Drawing is not to scale.

Table 21 . SO 16 wi de - 16-lead pla stic small outline, 30 0 mils body widt h,

mechanical data

Symbol Millimeters Inches

Typ Min Max Typ Min Max

A 2.35 2.65 0.093 0.104

A1 0.10 0.30 0.004 0.012

B 0.33 0.51 0.013 0.020

C 0.23 0.32 0.009 0.013

D 10.10 10.50 0.398 0.413

E 7.40 7.60 0.291 0.299

e 1.27 – – 0.050 – –

H 10.00 10.65 0.394 0.419

h 0.25 0.75 0.010 0.030

L 0.40 1.27 0.016 0.050

θ0° 8° 0° 8°

ddd 0.10 0.004

SO-H

LA1

ddd

h x 45˚

M25PX64 Packag e mechanical

65/70

Fig u re 39. T BGA, 6x 8 m m, 24 ball packag e outline

Package mechanical M25PX64

66/70

Table 22 . TBGA 6x8 mm 24- b all package d i mension s

MIN NOM MAX

A1.20

A1 0.20

A2 0.79

Øb 0.35 0.40 0.45

D 5.90 6.00 6.10

D1 4.00

E 7.90 8.00 8.10

E1 4.00

eD 1.00

eE 1.00

FD 1.00

FE 2.00

MD 5

ME 5

n 24 balls

aaa 0.15

bbb 0.10

ddd 0.10

eee 0.15

fff 0.08

Control unit: mm

M25PX64 Ordering information

67/70

12 Ordering information

Table 23. Ordering information sc heme

Example: M25PX64 – V ME 3 T P B A

Device type

M25PX = serial Flash memory, 4-Kbyte and 64-Kbyte erasable

sectors, dual input/output

Device function

64 = 64 Mbit (8 Mb × 8)

Secu rity fe atu res(1)

– = no extra security

SO = OTP configurable + CFD programmed with UID

ST = OTP configurable + protection at power_up + CFD

programmed with UID

S– = CFD programmed with UID

Operating volt age

V = VCC = 2.7V to 3.6V

Package

ME = VDFPN8 8 × 6 mm (MLP8)

MF = SO16 (300 mils width)

ZM = TBGA24 6 x 8 mm

MD = VDFPN8 8 × 6 mm (MLP8), with reduced D2 dimension

Device grade

6 = Industrial temperature range, –40 to 85 °C.

Device tested with standard test flow

3(2) = Automotive temperature range, –40 to 125 °C.

Device tested with high reliability certified flow(3).

Option

blank = Standard packing

T = Tape and reel packing

Plating Technology

P or G = RoHS compliant

Lithography

B = 110nm, Fab.2 Diffusion Plant

blank = 110 nm

Au tomotive Grade

A(2) = Automotive –40 to 125 °C Part.

Device tested with high reliability certified flow.(3)

blank = standard –40 to 85 °C device

1. Secure options are available upon customer request.

Ordering inf orm at ion M25PX64

68/70

Note: For a list of available options (speed, package, etc.) or for further information on any aspect

of t hi s device , please c ontact your nearest Numony x s ales off i ce.

2. Numonyx strongly recommends the use of the Automotive Grade devices(AutoGrade 6 and Grade 3) for use in an

automotive environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801.

3. Device grade 3 available in an SO8 RoHS compliant package.

M25PX64 Revision histor y

69/70

13 Revision history

Table 24. Document revi sion history

Date Revision Changes

05-Nov-2007 1 Initial release.

25-Mar-2008 2 Updated the minimum value for tSHSL in Table 18: AC characteristics.

Applied Numonyx branding.

24-Sept-2008 3

Corrected bulk erase specifications on the cover page.

Added the following information regarding Bulk Erase: Avoid applying VPPH to

the W/VPP pin during Bulk Erase.

04-February-2009 4 Added the TBGA package and accompanying informaiton.

16-February-2009 5 Added Notes to the TBGA package and deleted a blank page.

6-March-2009 6 Added “Automotive Certified Parts” information.

22-May-2009 7 Removed IPP from Table 17: DC characteristics .

22-September-2009 8 Added VDPN8 (MD) 8 x 6 (MLP8) package information

8-October-2009 9

Revised Table 19. : VDFPN8 (MLP8, ME) 8-lead very thi n dual flat pack age no

lead, 8 × 6 mm, package mechanical data as follows:

– footnote changed from D2 Max must not exceed (D – K – 2 × L)

D2 Max must not exceed (D – 2 x K – 2 × L)

Revised Table 20. : VDFPN8 (MLP8, MD) 8-l ead very thin dual flat package no

lead, 8 × 6 mm, package mechanical data as follows:

– footnote changed from D2 Max must not exceed (D – K – 2 × L)

D2 Max must not exceed (D – 2 x K – 2 × L)

– Changed D2 Typ from 4.75 to 4.70

– Changed K Min from 0.82 to 1.05

25-November-2009 10

Revised Table 20. : VDFPN8 (MLP8, MD) 8-l ead very thin dual flat package no

lead, 8 × 6 mm, package mechanical data as follows:

– D2 Max—note deleted and maximum value inserted instead.

M25PX64

70/70

Please Read Carefully:

INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR

IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT

AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY

WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF

NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE,

MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility

applications.

Numonyx may make changes to specifications and product descriptions at any time, without notice.

Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the

presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied,

by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.

Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves

these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.

Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.

Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by

visiting Numonyx's website at http://www.numonyx.com.

Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries.

*Other names and brands may be claimed as the property of others.