IRF7380 HEXFET(R) Power MOSFET VDSS Applications l High frequency DC-DC converters RDS(on) max 73m:@VGS = 10V 80V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 ID 3.6A SO-8 Top View Absolute Maximum Ratings Parameter Max. Units 80 V VDS Drain-to-Source Voltage VGS ID @ TA = 25C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 20 3.6 ID @ TA = 100C Continuous Drain Current, VGS @ 10V 2.9 IDM Pulsed Drain Current 29 PD @TA = 25C c Maximum Power Dissipation Linear Derating Factor h dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range A 2.0 W 0.02 W/C 2.3 -55 to + 150 V/ns C Thermal Resistance Parameter R JL Junction-to-Drain Lead R JA Junction-to-Ambient (PCB Mount) f Typ. Max. Units --- 42 C/W --- 62.5 Notes through are on page 8 1 www.irf.com (c) 2013 International Rectifier September 16, 2013 IRF7380 Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 80 --- --- V(BR)DSS/TJ RDS(on) Breakdown Voltage Temp. Coefficient --- 0.09 --- Static Drain-to-Source On-Resistance --- 61 73 m VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V IDSS Drain-to-Source Leakage Current --- --- 20 A --- --- 250 Gate-to-Source Forward Leakage --- --- 200 Gate-to-Source Reverse Leakage --- --- -200 IGSS V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 2.2A e VDS = VGS, ID = 250A VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Parameter gfs Forward Transconductance Min. Typ. Max. Units 4.3 --- --- S Conditions VDS = 25V, ID = 2.2A Qg Total Gate Charge --- 15 23 Qgs Gate-to-Source Charge --- 2.9 --- ID = 2.2A Qgd Gate-to-Drain ("Miller") Charge --- 4.5 --- VGS = 10V td(on) Turn-On Delay Time --- 9.0 --- VDD = 40V tr Rise Time --- 10 --- ID = 2.2A td(off) Turn-Off Delay Time --- 41 --- tf Fall Time --- 17 --- VGS = 10V Ciss Input Capacitance --- 660 --- VGS = 0V Coss Output Capacitance --- 110 --- Crss Reverse Transfer Capacitance --- 15 --- Coss Output Capacitance --- 710 --- Coss Output Capacitance --- 72 --- VGS = 0V, VDS = 64V, = 1.0MHz Coss eff. Effective Output Capacitance --- 140 --- VGS = 0V, VDS = 0V to 64V nC ns VDS = 40V RG = 24 e e VDS = 25V pF = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz g Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c cd Typ. Max. Units --- 75 mJ --- 2.2 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 3.6 A MOSFET symbol ISM (Body Diode) Pulsed Source Current --- --- 29 A showing the integral reverse VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 2.2A, VGS = 0V trr Reverse Recovery Time --- 50 --- ns Qrr Reverse Recovery Charge --- 110 --- nC c 2 www.irf.com (c) 2013 International Rectifier D G e S TJ = 25C, IF = 2.2A, VDD = 40V di/dt = 100A/s e Spetember 16, 2013 IRF7380 100 100 10 BOTTOM 1 3.7V 0.1 0.01 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V 10 BOTTOM 3.7V 1 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 0.001 0.1 1 10 100 0.1 1000 1 Fig 1. Typical Output Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () 2.5 10 T J = 150C T J = 25C VDS = 15V 20s PULSE WIDTH 0 3.0 4.0 5.0 6.0 100 1000 Fig 2. Typical Output Characteristics 100 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 7.0 I D = 3.6A 2.0 1.5 1.0 0.5 V GS = 10V 0.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V www.irf.com (c) 2013 International Rectifier -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature September 16, 2013 IRF7380 100000 VGS , Gate-to-Source Voltage (V) 10000 Coss = Cds + Cgd 1000 Ciss C oss 100 Crss 10 ID= 2.1A VDS= 16V 8 6 4 2 0 1 10 100 0 2 VDS, Drain-to-Source Voltage (V) 4 6 8 10 12 14 16 Q G Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ID, Drain-to-Source Current (A) 100 10 T J= 25 C TJ = 150 C 1 V GS = 0 V 0.1 0.0 0.5 1.0 1.5 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100sec 1 1msec Tc = 25C Tj = 150C Single Pulse 0.1 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 64V VDS= 40V 10 1 ISD, Reverse Drain Current (A) C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd www.irf.com (c) 2013 International Rectifier 1 10msec 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Spetember 16, 2013 IRF7380 4.0 RD VDS VGS ID , Drain Current (A) 3.0 D.U.T. RG + -V DD 10V 2.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TA , Ambient Temperature (C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 P DM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 J = P DM x Z thJA 1 +T A 10 100 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com (c) 2013 International Rectifier September 16, 2013 RDS(on) , Drain-to -Source On Resistance (m ) IRF7380 RDS (on) , Drain-to-Source On Resistance (m) 95 90 85 80 VGS = 10V 75 70 65 60 55 50 0 5 10 15 20 25 30 800 700 600 500 400 300 ID = 3.6A 200 100 0 3.0 ID , Drain Current (A) 5.0 7.0 9.0 11.0 13.0 15.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2F QGS .3F D.U.T. + V - DS QGD 200 VG EAS, Single Pulse Avalanche Energy (mJ) 50K 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD A TOP 160 120 80 40 0 0.01 Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 BOTTOM ID 1.0A 1.8A 2.2A www.irf.com (c) 2013 International Rectifier 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current Spetember 16, 2013 IRF7380 SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & $ \ >@ ;F ;/ & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com (c) 2013 International Rectifier September 16, 2013 IRF7380 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 31mH RG = 25, IAS = 2.2A. Pulse width 400s; duty cycle 2%. Revision History Date 09/16/2013 When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD 2.2A, di/dt 220A/s, VDD V(BR)DSS,TJ 150C. Comments Updated the Rthja from 50C/W to 62.5C/W, on page 1. * *Converted the data sheet to IR Corporate Template. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com (c) 2013 International Rectifier Spetember 16, 2013