2N3905
2N3906
PNP SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3905 and
2N3906 types are PNP silicon transistors designed for
general purpose amplifier and switching applications.
NPN complementary types are 2N3903 and 2N3904.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 200 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N3905 2N3906
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEV V
CE=30V, VEB=3.0V - 50 - 50 nA
BVCBO I
C=10μA 40 - 40 - V
BVCEO I
C=1.0mA 40 - 40 - V
BVEBO I
E=10μA 5.0 - 5.0 - V
VCE(SAT) I
C=10mA, IB=1.0mA - 0.25 - 0.25 V
VCE(SAT) I
C=50mA, IB=5.0mA - 0.4 - 0.4 V
VBE(SAT) I
C=10mA, IB=1.0mA 0.65 0.85 0.65 0.85 V
VBE(SAT) I
C=50mA, IB=5.0mA - 0.95 - 0.95 V
hFE V
CE=1.0V, IC=0.1mA 30 - 60 -
hFE V
CE=1.0V, IC=1.0mA 40 - 80 -
hFE V
CE=1.0V, IC=10mA 50 150 100 300
hFE V
CE=1.0V, IC=50mA 30 - 60 -
hFE V
CE=1.0V, IC=100mA 15 - 30 -
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 50 200 100 400
fT V
CE=20V, IC=10mA, f=100MHz 200 - 250 - MHz
Cob V
CB=5.0V, IE=0, f=100kHz - 4.5 - 4.5 pF
Cib V
EB=0.5V, IC=0, f=100kHz - 10 - 10 pF
NF VCE=5.0V, IC=100μA, RS=1.0kΩ
f=10Hz to 15.7kHz - 5.0 - 4.0 dB
ton V
CC=3.0V, VBE(OFF)=0.5V, IC=10mA
I
B1=1.0mA - 70 - 70 ns
toff V
CC=3.0V, IC=10mA, IB1=IB2=1.0mA - 260 - 300 ns
R2 (17-October 2011)
www.centralsemi.com
2N3905
2N3906
PNP SILICON TRANSISTOR
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R2 (17-October 2011)
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