© 2000 IXYS All rights reserved 1 - 4
ID25 = 35 A
VDSS = 500 V
RDS(on) = 0.12 W
Symbol Test Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 500 V
VDGR TVJ = 25°C to 150°C; RGS = 10 kW500 V
VGS Continuous ±20 V
IDTS= 85°C24A
IDTS= 25°C35A
IDM TS= 25°C, tp = ①95 A
PDTS= 85°C 170 W
ISVGS = 0 V, TS = 25°C24A
ISM VGS = 0 V, TS = 25°C, tp = ①95 A
VRRM 600 V
IdAV TS= 85°C, rectangular d = 0.5 40 A
IFSM TVJ = 45°C, t = 10 ms (50 Hz) 300 A
t = 8.3 ms (60 Hz) 320 A
TVJ = 150°C,t = 10 ms (50 Hz) 260 A
t = 8.3 ms (60 Hz) 280 A
PTS= 85°C36W
VRRM 800 V
IdAV TS= 85°C, sinus 180°40 A
IFSM TVJ = 45°C, t = 10 ms (50 Hz) 300 A
t = 8.3 ms (60 Hz) 320 A
TVJ = 150°C,t = 10 ms (50 Hz) 260 A
t = 8.3 ms (60 Hz) 280 A
PTS= 85°C33W
TVJ -40...+150 °C
TJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5/18-22 Nm/lb.in.
Weight 28 g
Module for Power Factor Correction
MOSFET
Boost DiodeModule Rectifier Diodes
Features
●Package with DCB ceramic base plate
●Soldering connections for PCB
mounting
●Isolation voltage 3600 V~
●Low RDS(on) HDMOSTM process
●Low package inductance for high
speed switching
●Ultrafast boost diode
●Kelvin source for easy drive
Applications
●Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters
●Boost topology for SMPS including
1~ rectifier bridge
●Power supply for welding equipment
Advantages
●3 functions in one package
●Output power up to 5 kW
●No external isolation
●Easy to mount with two screws
●Suitable for wave soldering
●High temperature and power cycling
capability
●Fits easiliy to all available PFC
controller ICs
① Pulse width limited by TVJ
IXYS reserves the right to change limits, test conditions and dimensions.
VUM 24-05
VRRM (Diode) VDSS Type
VV
600 500 VUM 24-05N
Power MOSFET Stage
for Boost Converters
57
68
3
24
1
513278 46
© 2000 IXYS All rights reserved 2 - 4
Symbol Test Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 2 mA 500 V
VGS(th) VDS = 20 V, ID = 20 mA 2 5 V
IGSS VGS = ±20 V, VDS = 0 V ±500 nA
IDSS VDS = 500 V, VGS = 0 V 2 mA
RDS(on) TVJ = 25°C 0.12 W
RGint TVJ = 25°C1.5W
gfs VDS = 15 V, IDS = 12 A 30 S
VDS IDS = 24 A, VGS = 0 V 1.5 V
td(on) 100 ns
td(off) 220 ns
Ciss 8.5 nF
Coss 0.9 nF
Crss 0.3 nF
QgVDS = 250 V, ID = 12 A, VGS = 10 V 350 nC
RthJS 0.38 K/W
VFIF= 22 A; TVJ =25°C 1.65 V
TVJ =150°C1.4V
IRVR= 600 V, T VJ =25°C1.5mA
VR= 480 V, T VJ =25°C 0.25 mA
TVJ =125°C7mA
VT0 For power-loss calculations only 1.14 V
rTTVJ = 125°C10mW
IRM IF= 30 A; -diF/dt = 240 A/ms
VR= 350 V, T VJ = 100°C1011A
RthJS 1.8 K/W
VFIF= 20 A, TVJ =25°C1.4V
TVJ =125°C1.4V
IRVR= 800 V T VJ =25°C 0.25 mA
VR= 640 V, T VJ =125°C2mA
VT0 For power-loss calculations only 1.05 V
rTTVJ = 125°C16mW
RthJS 2 K/W
VDS = 250 V, IDS = 12 A, VGS = 10 V
Zgen. = 1 W, L-load
VDS = 25 V, f = 1 MHz, VGS = 0 V
Rectifier Diodes Boost Diode MOSFET
Fig. 1 Non-repetitive peak surge
current (Rectifier Diodes)
VUM 24-05
Fig. 2 I2t for fusing (Rectifier Diodes)
Dimensions in mm (1 mm = 0.0394")
t
I2t
A2s
A
IFSM
0.001 0.01 0.1 1
0
50
100
150
200
250
300
350
110
0
100
200
300
400
500
s
ms
t
VR= 0.8VRRM
TVJ= 45
°
C
TVJ= 125
°
C
TVJ= 45
°
C
TVJ= 125
°
C
© 2000 IXYS All rights reserved 3 - 4
VUM 24-05
234567
0
10
20
30
40
50
60
70
80
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
s
gfs
0 20406080100
0
20
40
60
80
0.51.01.52.02.5
0
20
40
60
80
100
120
10 100 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20
0.1
1
10
100
0 100 200 300 400
0
2
4
6
8
10
12
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
A/
m
s
VDS
V
C
nF
nC
°C
BVDSS
TVJ
norm.
°C
VGS
Qg
V
norm.
VGS(th)
TVJ
RDS(on)
0246810
0
10
20
30
40
50
60
70
80
ID
VDS V
A
VGS
ID
V
A
VF
A
TVJ = 25
°
C
TVJ = 125
°
C
-diF/dt
V
µC
VGS= 5 V
6 V
10 V
7 V
ID=18A
VDSS
VGS(th) VDS= 250 V
ID = 18 A
IG = 10 mA
Ciss
Coss
Crss
Qrr
TVJ=150
°
C
TVJ=100
°
C
TVJ= 25
°
C
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18 .5 A
IF
A
ID
typ.
max.
TVJ=100
°
C
VR= 350 V
Fig. 3 Typ. output characteristic Fig. 4 Typ. transfer characteristics Fig. 5 Typ. normalized
ID = f (VDS) (MOSFET) ID = f (VGS) (MOSFET) RDS(on) = f (TVJ) (MOSFET)
Fig. 6 Typ. normalized BVDSS = f (TVJ) Fig. 7 Typ. turn-on gate charge Fig. 8 Typ. capacitances C = f (VDS),
VGS(th) = f (TVJ) (MOSFET) characteristics, VGS = f (Qg) (MOSFET) f = 1 MHz (MOSFET)
Fig. 9 Typ. transconductance, Fig. 10 Forward current versus Fig. 11 Recovery charge versus -diF/dt
gfs = f (ID) (MOSFET) voltage drop (Boost Diode) (Boost Diode)
© 2000 IXYS All rights reserved 4 - 4
VUM 24-05
0 50 100 150 200 250
0
1
2
3
4
5
6
7
0.01 0.1 1 10
0.0
0.5
1.0
1.5
2.0
2.5
0 20406080100120
0
1
2
3
4
5
6
7
8
0 100 200 300 400 500 600
0.0
0.1
0.2
0.3
0.4
0.5
0.6
40 60 80 100 120
0
1
2
3
4
5
6
0 100 200 300 400 500 600
0
10
20
30
40
50
kW
Pout
ZthJC
K/W
t
-diF/dt
TS
°C
Pout
kW
0 100 200 300 400 500 600
2
4
6
8
10
12
14
16
18
0.1
0.3
0.5
0.7
0.9
VFR
µs
-diF/dt
IRM
A
20 40 60 80 100 120 140 160
0.4
0.6
0.8
1.0
1.2
1.4
TJ
Kt
Vin = 230 V/50 Hz
TS =85°C
Vin = 115 V/60 Hz
Pout
Vin ( RMS )
kW TS =85°C
fc = 40 kHz
fc = 80 kHz
V
fc = 80 kHz
Vin = 23 0 V/50 H z
Vin = 115 V/60 Hz
°C A/
m
s
A/
m
s
Rectif ier Diod e s
Boost Diode
MOSFET
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18 .5 A
typ.
max.
IRM
Qr
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
typ.
max.
V
fc
diF/dt kHz
A/
m
s
s
VFR
tFR
tFR
m
s
trr
TVJ=100
°
C
VR= 350 V
TVJ=100
°
C
VR= 350 V
VUM 24
Fig. 12 Peak reverse current versus Fig. 13 Dynamic parameters versus Fig. 14 Recovery time versus
-diF/dt (Boost Diode) junction temperature (Boost Diode) -diF/dt (Boost Diode)
Fig. 15 Peak forward voltage versus Fig. 16 Output power versus carrier Fig. 17 Output power versus
-diF/dt (Boost Diode) frequency (Module) mains voltage
Fig. 18 Output power versus Fig. 19 Transient thermal impedance junction to case for all devices
heatsink temperature (Module)
T
VJ
