SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)74 TYPE No. UCc801 UC850 DOO7K DD10K 41004 BSX83t $c 1600* * $C1612 $C1625* BSV20At DP146 RM8007D DD1SK* * DMO38* * UC450 BSV34t BSX85* * MEM400t VIto23 D.A.T.A. 1.0n 10n 100p 20m = |5.0n 1.0n | 100F 75md |250p m= |.03n 200m|200m/8. 1.0n 200m 50me 100m] 100u |500p 50m) 100u |6.0m 20 IN ORDER OF (1) DISSIPATION IN FREE |MAX |TURE AIR |TEMP 75u |750u . PLY 110u 4.0m |5.4m 8.0mA 800u 40k 40m |.60mA| 25u |1.0k 40m 25k 80m 40m 25k 4.6mA 250 60u 10m Sm 2.0mA 5m 1.5m [2.3mA {120u SYMBOLS AND CODES EXPLAINED !IN INTERPRETER Y200 |E 0 s/a |AD TO200/D E L75 a L75a R96a |DC TO72|DM L18b R96c L18b TO72 |DM TO18 L49y TO12 L186 TO18 L$1a TO76 a T033 LS7 74b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)13. MISCELLANEOUS TRANSISTORS IN ORDER OF (0 CATEGORY & G2) TYPE Neo 2 "fea TEGORY M|DWG #{L C LINE TYPE U|STRUC.- A|200 EO DESCRIPTION No. No. S| TURE T|_s/a AD E TO200 DE Ser. T# |SAC42* 10 |P-A Si yTot VO-5mV maxl0-.05uA max;VCE-25V;hFE-2.5 min at 3V;1mA;4Mc/s 2# |SAC42A* 1O|P-A Si |TO1 VO0-5mV maxjO0-05uA max:VCE-25V:hFE-2.5 min at 3V;1mA4Mc/s 3# |SAC42B* 10 |P-A Si_|TO1 VO-5mV_ max;lO-.05uA max;VCE-25V;hFE-2.5 min at 3V;1mA;4Mc/s 4# |SAC44* 10 |P-A Si [TO1 VO-1t0mV;10-.01uA_ max;VCB-5V;hFE-1 min at 3V;1mA;4Mc/s 5# |SPC40* 10 [N-PE Si |TO18 VO-2mV max;VCBO-25V max;VEBO-6Vmax 6# |SPC42* 10 |N-PE Si iTO18 VO-5mV_max;VCBO-25V_max;VEBO-6Vmax 7# |SPC50* 10 |N-PE Si [R38 AVO-50uV max; rd-125 ohms typ; Double emitter device 8# |SPC51* 10 |N-PE Si |R38 AVO-100uV max; rd-125 ohms typ; Double emitter device 9# |SPC52* 10 |N-PE Si_|R38 AVO-200uV_max; rd-125 ohms typ; Double emitter device 10# [SSA43A* 10 |P-A Si {TO1 Symmetrical hFE-10 min at VE2E1-3V; IE-1mA 1t# |SSA46* 10 |P-A Si |TO1 Symmetrical hFE-7 min at VE2E1 orVE1E2-3V; 1E-1mA 12# |SSA46A 10 |P-A Si_|TO1 Symmetrical VE1E2(SAT)-50OmV_max at_IC-5mA;IB-1mA 13% |SSA48* 10 [P-A Si |TOT Symmetrical hFE- 7 min atVE2E1 or VE1E2-3V; IE-1mA 14 |ST5610 10 |N-PE Si |TO72 |GDZ|BVCBO-25V;BVEEO-18V;Voff-50uV:rs-50Q:Ton and Toff-500ns. 18 |ST5611 10 |N-PE Si_|TO72__|GD@/BVCBO-25V:BVEEO-18V;Voff-100uV_max;rs-100Q;Ton and Toff-500ns. 16 =(ST5612 10 [N-PE Si [TO72 |GD@|BVCBO-25V;BVEEO-12V;Votf-50uV max:rs-500;Ton and Toff-500ns. 17. |ST5613 10 |N-PE Si |TO72 |GDZ|BVCBO-25V;BVEEO-12V;Voff-100uV max:rs-1002;Ton and Toff-500ns. 18 |ST5614 10 |N-PE Si_|TO72 |GDZ|BVCBO-15V:BVEEO-8.0V;Voff-150uV_max;rs-1500;Ton and Toff-500ns. 19 |ST5641 10 |[N-PE Si /TO18 Voff--50mV max;rd-25 ohms max;VECO-15V min. 20 $T61000* 10 |P-PE Si |TO46 AZ|hFE(inverse)-75 min at VCE-6.0V;VEC/(off)-.80mV;rec(on)-3.0ohms. 21 ST70000* 10 |N-PE* Si |L62 Voff/IB-10uV_ max AVoff/TA-20uV_max:A/Voft1/2/TA-1OuV max. 22 |$T70001* 10 |N-PE* Si IL62 Voft/IB-25uV max;AVoff/TA-50uV_ max:A/Voff1/2/TA-25uV max. 230 |TW135 10 /P-PE Si |TO18 A |Voff-1.0mV max at IB-1.0mA;rS-20 ohms;Cib-6.0pf max. 24 U8s9* 10 |P Si_ |TO18 D| U |Cdg1-.90pf max; Cdg2-1.8pf typical at Vds-5V,Vg1s-OV,V-Vg2s-1V. 28 {UD1001 10 /P-PE Si [TO9O0 Dual Emit Pr; Pt-200mW(both sides); BVE1E20-30V; BVEBO-30. 26# |UPA16 10 |N-PE Si |L5 Pc-.6W max;hFE1/hFE2-.80 min;hFE-20 min at .2OmMA;AVoff-100uV max. 27 |2N626 11[N Ge-|Si Pc-10W max; BVCBO-30V; Ic-3.0A_max;hFE-18000 min/VCE-5.0ViIc1.0A, 28 = |2N676 11/P Ge-|Si Pc-1OW max; BVCBO-30V; Ic-3.0A max:hFE-15000/VCE-5.0V; 11.0A. 29 = |2N3230 11|NA Si |L35 Pd 25W:VCEV 80V:Ilc 7A max;hFE 1.0k min at lc 5A;Ton 350ns max. 30 |2N3231 11 INA Si_|L35 Pd-25W:VCEV-100V,IC-7A max;hFE-1000 min. at 1C-5A;Ton-350ns_max. 314 |20C26 11|P Ge |MD3 VCBO 40V:VCEO 20Vilc 3.5A;Pt 12W:hFE 20 min. 324% |20C30 11/P Ge |MD17c (CH |VCBO 32V;VCEO 16V;IC 1.4A;Pt 40W:hFE 32. 33 /4JD12x009 11 |N-PL Si_|L42 Contains 3-2N1613 transistors and_a_1N914 diode;Pt-300mW. 34 = |4JD12X010 11 )N-PL Si [L29a Contains 2-2N1613 transistors;PT-3OOmW/Transistor. 35 4JD12X011 41 4N-PL Si |L27 Contains 3-2N1613 type transistors;Darlington input and output. 36 14JD12X012 11|N-PL Si |L28 4-2N1613 type transistor;Darl.Diff.Amp.;hFE1/2-.80 to 1.25 37 4JD12X014 17 7N-PL Si [L26 Contains 3-2N1613 typ transistors;Darlington input and output. 38 (4JD12X132 11 |N-PE Si |L4 Darlington Amp;BVCBO-80V;BVCEO-60V;BVEBO-15V;Pt-.5OW. 39 12X006 11 |N-PL Si |L31 Emitter Coupled Logic or/and gate;Pt-1OOmW;hFE-120:;VCEO-15V 40 12x008 11 )N-PL $i ]L30 Functional Device and gate:Pt-100mW;hFE-120max;VCEO-15V 41 12X040 11 |N-PL Si Active Functional Device; VCEO-60V;hFE 1/hFE2-1.0;4VBE-5.0mV 42 12X058 11 {N-PL Si Active Functional Device; VCEQ-60V;hFE 1/hFE2-1.0;AVBE-10mV 43 12X059 11 ]N-PL Si Active Functional Device; VCEO-60V;hFE 1/hFE2-1.0;AVBE-5.0mV 44 |22MPG5 11/P Ge |L5 BVCBO-10V; BVCEQO-4.0V; Ic-.50A; fab