SFH 4203
Schn el le Ga As -IR-Lumine s ze nzdiode (950 nm )
High-Speed GaAs Infrared Emitter (950 nm)
2001-02-22 1
Wesentliche Merkmale
• GaAs-LED mit sehr hohem Wirkungsgrad
• Gute Linearität (Ιe = f [IF]) bei hohen Strömen
• Gleichstrom- (mit Modulation) oder
Impulsbetrieb möglich
• Hohe Zuverlässigkeit
• Hohe Impulsbelastbarkeit
• Für Oberflächenmontage geeignet
• Gegurtet lieferbar
Anwendungen
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb, Lochstreifenleser
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Automobiltechnik
• Sensorik
• Alarm- und Sicherungssysteme
• IR-Freiraumübertragung
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 4203 Q62702-P5232 Mini TOPLED®
Anodenkennzeichnung: abgesetzte Ecke
Anode marking: bevelled edge
Features
•Very highly efficient GaAs-LED
•Good Linearity (Ιe = f [IF]) at high currents
•DC (with modulation) or pulsed operations are
possible
•High reliability
•High pulse handling capability
•Suitable for surface mounting (SMT)
•Available on tape and reel
Applications
•Miniature photointerrupters
•Industrial electronics
•For drive and control circuits
•Automotive technology
•Sensor technology
•Alarm and safety equipment
•IR free air transmission
2001-02-22 2
SFH 4203
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR3V
Durchlassstrom
Forward current IF (DC) 100 mA
Stoßstrom, tp = 10 µs, D = 0
Surge current IFSM 1A
Verlustleistung
Power dissipation Ptot 180 mW
Wärmewiderstand Sperrs chicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
450
200
K/W
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
∆λ 40 nm
Abstrahlwinkel
Half angle ϕ± 65 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area L×B
L×W0.3 ×0.3 mm
SFH 4203
2001-02-22 3
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, tp = 20 ms, RL = 50 Ω
tr, tf10 ns
Durchlassspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.5 (≤ 1.8)
3.2 (≤ 3.6) V
V
Sperrstrom,
Reverse current
VR = 3 V
IR0.01 (≤ 10) µA
Gesamtstrahlungsfluss,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe28 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI– 0.44 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.2 nm/K
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min.
Ie typ.
4
6.5 mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ. 45 mW/sr
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 4203
2001-02-22 4
Relati ve Sp ectral Emissio n
Irel = f (λ)
Max. Permissible Forward Current
IF = f (TA), RthJA1)
1) Thermal resistance junction -
ambient mounted on PC-board
(FR4), pad size 16 mm2 (each).
OHF00777
nm800
Ιerel
λ
0
850 900 950 1000 1100
20
40
60
80
100
OHF00359
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
TA
RthJA = 375 K/W
Radiant Intensity
Single pulse , tp = 20 µs
Radi ati on C hara ct eris tics Irel = f (ϕ)
Ie
Ie 100 mA = f (IF)
e
e (100 mA)
mA
OHF00809
F
Ι
ΙΙ
10 40
10 10 110 23
10
10-3
10-2
10
10-1
0
102
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚30˚
OHL00869
50˚
60˚
70˚
80˚
90˚
100˚0˚20˚40˚60˚80˚100˚120˚
Forward Current IF = f (VF)
single puls e, tp = 20 µs
OHF00784
10
-3
V
mA
0
Ι
F
V
F
0.5 1 1.5 2 2.5 3 3.5 4.5
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
SFH 4203
2001-02-22 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inc h) / Dim ensions are specified as follows: mm (inc h).
GPLY6070
0.8 (0.031)
1.0 (0.039) 0.05 (0.002)
0.15 (0.006)
1.4 (0.055)
1.2 (0.047)
2.1 (0.083)
2.1 (0.083)
2.3 (0.091)
1.3 (0.051)
Anode marking
0.5 (0.020)
0.3 (0.012)
Anode
marking
Light emitting area
typ. 1.5 (0.059) x 1.0 (0.039)
1.5 (0.059)
1.2 (0.047)
0.8 (0.031) +0.05 (0.002)
1.0 (0.039)
1.9 (0.075)
1.5 (0.059)
2001-02-22 6
SFH 4203
Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage.
For additional information on general soldering conditions please contact us.
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describes the type of component and shall not be considered as assured c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If they fail , it is rea so nable to assume th at the health of the user may be endangered.
Löthinweise
Soldering Conditions
Bauform
Types Reflowlötung
Reflow Soldering
Lötzonentemperatur
Temperature of Soldering
Zone
Maximale Durchlaufzeit
Max. Transit Time
Mini TOPLED®245 °C10s
