IXGP20N120B - IXYS Corporation

G = Gate C = Collector

E = Emitter TAB = Collector

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 1200 V

VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1200 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C40A

IC110 TC= 110°C20A

ICM TC= 25°C, 1 ms 100 A

SSOA VGE = 15 V, TJ = 125°C, RG = 10 Ω ICM = 40 A

(RBSOA) Clamped inductive load @0.8 VCES

PCTC= 25°C 190 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting torque (M3.5 screw) 0.55/5 Nm/lb.in.

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Maximum tab temperature 260 °C

soldering SMD devices for 10s

Weight 4 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VGE(th) IC= 250 µA, VCE = VGE 2.5 5.0 V

ICES VCE = VCES 20N120B 50 µA

VGE = 0 V 20N120BD1 150 µA

IGES VCE = 0 V, VGE = ±20 V ±100 nA

VCE(sat) IC = 20A, VGE = 15 V 2.9 3.4 V

Note 2 TJ=125°C 2.8 V

Features

zInternational standard package

zIGBT and anti-parallel FRED for

resonant power supplies

- Induction heating

- Rice cookers

zMOS Gate turn-on

- drive simplicity

zFast Recovery Expitaxial Diode (FRED)

- soft recovery with low IRM

Advantages

zSaves space (two devices in one

package)

zEasy to mount with 1 screw

zReduces assembly time and cost

DS99138(12/03)

High Voltage IGBT with Diode

IXGP 20N120B

IXGP 20N120BD1

VCES = 1200 V

IC25 =40A

VCE(sat) = 3.4 V

tfi(typ) = 160 ns

Preliminary Data Sheet

D1

TO-220 (IXGP)

GCE

C (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGP 20N120B

IXGP 20N120BD1

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

gfs IC= 20A; VCE = 10 V, 12 18 S

Note 2.

Cies 1700 pF

20N120B 95 pF

Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 20N120BD1 105 pF

Cres 39 pF

Qg72 nC

Qge IC = 20A, VGE = 15 V, VCE = 0.5 VCES 12 nC

Qgc 27 nC

td(on) 25 ns

tri 15 ns

td(off) 150 280 ns

tfi 160 320 ns

Eoff 2.1 3.5 mJ

td(on) 25 ns

tri 18 ns

Eon 1.4 mJ

td(off) 270 ns

tfi 360 ns

Eoff 3.5 mJ

RthJC 0.65 K/W

RthCK 0.25 K/W

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

VFIF = 10 A, VGE = 0 V 3.3 V

IFTC = 90°C10A

IRM IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V 14 A

trr VGE = 0 V; TJ = 125°C 120 ns

trr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 40 ns

RthJC 2.5 K/W

Inductive load, TJ = 125°°

°°

°C

IC = 20A; VGE = 15 V

VCE = 0.8 VCES; RG = Roff = 10 Ω

Note 1

Inductive load, TJ = 25°°

°°

°C

IC = 20 A; VGE = 15 V

VCE = 0.8 VCES; RG = Roff = 10 Ω

Note 1.

Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES,

higher TJ or increased RG.

2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Pins: 1 - Gate 2 - Collector

3 - Emitter 4 - Collector

TO-220 Outline

IXGP 20N120B

IXGP 20N120BD1

Fig. 2. Extended Output Characteris tics

@ 25 deg. C

0

20

40

60

80

100

120

140

160

0 2 4 6 8 101214 161820

V

C E

- Volts

I

C

- Amperes

V

GE

= 15V

5V

7V

9V

11V

13V

Fig. 3. Output Characteristics

@ 125 Deg. C

0

5

10

15

20

25

30

35

40

0.511.522.533.544.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

5V

Fig. 1. Output Characteris tics

@ 25 Deg. C

0

5

10

15

20

25

30

35

40

0.511.522.533.544.5

V

C E

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

5V

Fig. 4. Dependence of V

CE(sat)

on

Temperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

C E (sat)

- Normalize

d

I

C

= 20A

I

C

= 10A

V

GE

= 15V

I

C

= 40A

Fig. 5. Colle ctor-to-Em itter Voltage

vs. Gate-to-Em iiter voltage

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

6.5

6 7 8 9 10 11 12 13 14 15 16 17

V

G E

- Volts

V

C E

- Volts

T

J

= 25ºC

I

C

= 40A

20A

10A

Fig. 6. Input Adm ittance

0

10

20

30

40

50

60

45 6789

V

G E

- Volts

I

C

- Amperes

T

J

= 125ºC

25ºC

-40ºC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGP 20N120B

IXGP 20N120BD1

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

Fig. 7. Transconductance

0

3

6

9

12

15

18

21

24

0 102030405060

I C - Amperes

g f s - Siemens

T

J = -40ºC

25ºC

125ºC

Fig. 8. Dependence of Turn-off

Energy Loss on RG

0

2

4

6

8

10

12

14

16

10 30 50 70 90 110 130 150

R G - Ohms

E off - milliJoules

IC = 10A

T

J = 125ºC

VGE = 15V

VCE = 960V

IC = 20A

IC = 40A

Fig. 9. Dependence of Turn-Off

Energy Loss on Ic

0

2

4

6

8

10

12

14

10 15 20 25 30 35 40

I C - Amperes

E off - MilliJoules

RG = 10Ω

RG = 100Ω - - -

VGE = 15V

VCE = 960V

TJ = 125ºC

TJ = 25ºC

Fig. 10. Dependence of Turn-off

Energy Loss on Temperature

0

2

4

6

8

10

12

14

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

E off - milliJoules

IC = 40A

RG = 10Ω

RG = 100Ω - - -

VGE = 15V

VCE = 960V

IC = 20A

IC = 10A

Fig. 11. Dependence of Turn-off

Sw itching Tim e on RG

200

400

600

800

1000

1200

1400

10 30 50 70 90 110 130 150

R G - Ohms

Switching Time - nanoseconds

IC = 10A

td(off)

tfi

- - - - - -

TJ = 125ºC

VGE = 15V

VCE = 960V

IC = 20A

IC = 40A

Fig. 12. Dependence of Turn-off

Switching Time on Ic

200

250

300

350

400

450

500

550

10 15 20 25 30 35 40

I C - Amperes

Switching Time - nanoseconds

td(off)

tfi

- - - - - -

RG = 10Ω

VGE = 15V

VCE = 960V

TJ = 125ºC

TJ = 25ºC

IXGP 20N120B

IXGP 20N120BD1

200 600 10000 400 800

70

80

90

100

110

120

0.00001 0.0001 0.001 0.01 0.1 1

0.001

0.01

0.1

1

10

0 40 80 120 160

0.0

0.5

1.0

1.5

2.0

Kf

TVJ

°C

-diF/dt

t

s

K/W

0 200 400 600 800 1000

0

5

10

15

20

0.0

0.3

0.6

0.9

1.2

VFR

diF/dt

V

200 600 10000 400 800

0

10

20

30

40

100 1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.0 0.5 1.0 1.5 2.0 2.5

0

5

10

15

20

25

30

IRM

Qr

IF

A

VF-diF/dt -diF/dt

A/µs

A

V

nC

A/µsA/µs

trr

ns

tfr

ZthJC

A/µs

µs

DSEP 8-06A/DSEC16-06A

IF= 20A

IF= 10A

IF= 5A

TVJ= 100°C

VR = 300V

TVJ= 100°C

IF = 10A

Fig. 15. Peak reverse current IRM

versus -diF/dt

Fig. 14. Reverse recovery charge Qr

versus -diF/dt

Fig. 13. Forward current IF versus VF

TVJ= 100°C

VR = 300V

TVJ= 100°C

VR = 300V

IF= 20A

IF= 10A

IF= 5A

Qr

IRM

Fig. 16. Dynamic parameters Qr, IRM

versus TVJ

Fig. 17. Recovery time trr versus -diF/dt Fig. 18 Peak forward voltage VFR and

tf versus diF/dt

IF= 20A

IF= 10A

IF= 5A

tfr

VFR

Fig. 19. Transient thermal resistance junction to case

Constants for ZthJC calculation:

iR

thi (K/W) ti (s)

1 1.449 0.0052

2 0.5578 0.0003

3 0.4931 0.0169

914

TVJ=150°C

TVJ=100°C

TVJ= 25°C

NOTE: Fig. 2 to Fig. 6 shows typical values