SKM 145GB063DN 6 17 8) Absolute Maximum Ratings Symbol Conditions IGBT ()' ) )=> (' ,A ( SEMITRANSTM 2N Superfast NPT-IGBT Modules SKM 145GB063DN SKM 145GAL063DN Features ! ! ! " " # $ % % & " ' & & %% % ()' ( $ ! ) ) ) * + % , )- "" . " " /0 " " 10 Typical Applications ! % ! " " ! 2 -) , , ", % 3 #, /0 4 5 . " , 6 17 ;0 8) 6 / B'=-B C ! % " Values Units 900 100 /<0 ?00 @ 10 <0 &&& D/70 /17 ( ( 8) 1700 ( /?0 E0 ?00 - ;;0 - -) / & Inverse diode * *=> 6 17 ;0 8) 6 / *> 6 /0 F &F A 6 /70 8) 6 17 8) Characteristics Symbol Conditions IGBT min. (' )' ()'B )' (' 6 ()' ) 6 ? (' 6 0 ()' 6 ()' A 6 17 /17 8) A 6 /17 8) (' 6 /7 ( A 6 17 /17 8) ()' ) 6 /70 - (' 6 /7 ( ) ) ) " % ! " (' 6 0 ()' 6 17 ( % 6 / > 5 <7 , ! % " typ. max. Units 77 01 / 07 / G E ? 97 09 ( ( H 1 / 1 < 1 7 1 ; ( ;< / 09 * * * 17 )' =))ID''I & 6 17 /17 8) " "%% % ()) 6 ?00 ( ) 6 /70 = 6 =%% 6 /0 H A 6 /17 8) (' 6 @ /7 ( ' '%% 0 G7 / H /?0 97 <70 <0 ; 7 7 7 J Inverse diode (* 6 (') (B ==> K * 6 /70 -F (' 6 0 (F A 6 17 /17 8) A 6 /17 8) A 6 /17 8) * 6 /70 -F A 6 /17 8) "L" 6 -LM ' (' 6 0 ( / 77 / 77 9 7? ;/ /E 0E ; ( ( H M) J FWD (* 6 (') (B ==> K * 6 /70 -F (' 6 0 ( A 6 17 /17 8) A 6 /17 8) A 6 /17 8) * 6 /70 -F A 6 /17 8) "L" 6 0 -LM ' (' 6 ( / 77 / 77 9 7? ;/ /E 0E ; ( ( H M) J Thermal characteristics =A =AO , O" 0 /; 07 NL. NL. = " 0 07 NL. 7 7 /90 Mechanical data > > 4 >9 >7 ! GB 1 ? 17 GAL 14-06-2005 SEN (c) by SEMIKRON SKM 145GB063DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-06-2005 SEN (c) by SEMIKRON SKM 145GB063DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-06-2005 SEN (c) by SEMIKRON SKM 145GB063DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm ) O E? - ) O E< P O E? ) O E? This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-06-2005 SEN (c) by SEMIKRON