2001-09-07
Page 1
SDP20S30
SDB20S30
Preliminary data
Silicon Carbide Schottky Diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Product Summary
VRRM 300 V
Qc23 nC
IF2x10 A
P-TO220-3-1.P-TO220-3.SMD
Marking
D20S30
S20S30
Type Package Ordering Code
SDP20S30 P-TO220-3-1. Q67040-S4419
SDB20S30 P-TO220-3.SMD Q67040-S4374
1 2 3
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified (per leg)
Parameter Symbol Value Unit
Continuous forward current, TC=100°C IF10 A
RMS forward current, f=50Hz IFRMS 14
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
IFSM 36
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM 45
Non repetitive peak forward current
tp=10µs, TC=25°C
IFMAX 100
i 2t value, TC=25°C, t
p=10ms
i2dt6.5 A²s
Repetitive peak reverse voltage VRRM 300 V
Surge peak reverse voltage VRSM 300
Power dissipation, single diode mode, TC=25°C Ptot 65 W
Operating and storage temperature T
j
, Tst
g
-55... +175 °C
2001-09-07
Page 2
SDP20S30
SDB20S30
Preliminary data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case (per leg) RthJC - - 2.3 K/W
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
P-TO263-3-2: @ 6 cm2 cooling area 1)
RthJA
-
-
-
35
62
-
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified (per leg)
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=10A, Tj=25°C
IF=10A, Tj=150°C
VF
-
-
1.5
1.5
1.7
1.9
V
Reverse current
VR=300V, Tj=25°C
VR=300V, Tj=150°C
IR
-
-
15
20
200
1000
µA
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2001-09-07
Page 3
SDP20S30
SDB20S30
Preliminary data
Electrical Characteristics,at T
j
= 25 °C, unless otherwise specified (per leg)
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Total capacitive charge1)
VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C
Qc- 23 - nC
Switching time2)
VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C
trr - n.a. - ns
Total capacitance
VR=0V, TC=25°C, f=1MHz
VR=150V, TC=25°C, f=1MHz
VR=300V, TC=25°C, f=1MHz
C
-
-
-
600
55
40
-
-
-
pF
2001-09-07
Page 4
SDP20S30
SDB20S30
Preliminary data
1 Power dissipation (per leg)
Ptot = f (TC)
0 20 40 60 80 100 120 140 °C 180
TC
0
5
10
15
20
25
30
35
40
45
50
55
60
W
70
P
tot
2 Diode forward current (per leg)
IF= f (TC)
parameter: Tj
175 °C
0 20 40 60 80 100 120 140 °C 180
TC
0
1
2
3
4
5
6
7
8
9
A
11
I
F
4 Typ. forward power dissipation vs.
average forward current (per leg)
PF(AV)=f(IF) TC=100°C, d = tp/T
0 2 4 6 8 10 12 14 A18
IF(AV)
0
4
8
12
16
20
24
W
32
PF(AV)
d=1
d=0.5
d=0.2
d=0.1
3 Typ. forward characteristic (per leg)
IF = f (VF)
parameter: T
j
, tp = 350 µs
0.6 0.8 1 1.2 1.4 1.6 1.8 V2.2
VF
0
2
4
6
8
10
12
14
16
A
20
I
F
-40°C
25°C
100°C
125°C
150°C
2001-09-07
Page 5
SDP20S30
SDB20S30
Preliminary data
5 Typ. reverse current vs. reverse voltage
(per leg)IR=f(VR)
50 100 150 200 V300
VR
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
µA
I
R
150°C
125°C
100°C
25°C
6 Transient thermal impedance (per leg)
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SDP20S30
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
7 Typ. capacitance vs. reverse voltage
(per leg)C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
10 0 10 1 10 2 10 3
V
VR
0
50
100
150
200
250
300
350
pF
450
C
8 Typ. C stored energy (per leg)
EC=f(VR)
0 50 100 150 200 V300
VR
0
0.5
1
1.5
µJ
2.5
EC
2001-09-07
Page 6
SDP20S30
SDB20S30
Preliminary data
9 Typ. capacitive charge vs. current slop
e
(per leg)Qc=f(diF/dt)
parameter: Tj = 150 °C
100 200 300 400 500 600 700 800 A/µs 1000
diF/dt
0
2
4
6
8
10
12
14
16
18
nC
22
Qc
IF*0.5
IF
IF*2
2001-09-07
Page 7
SDP20S30
SDB20S30
Preliminary data
P-TO220-3-1
symbol [mm] [inch]
minmaxminmax
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071
2.54 typ. 0.1 typ.
dimensions
P-TO220-3-1
symbol [mm] [inch]
minmaxminmax
A 9.80 10.00 0.3858 0.3937
B
C 1.25 1.75 0.0492 0.0689
D 0.95 1.15 0.0374 0.0453
E
F 0.72 0.85 0.0283 0.0335
G
H 4.30 4.50 0.1693 0.1772
K 1.28 1.40 0.0504 0.0551
L 9.00 9.40 0.3543 0.3701
M 2.30 2.50 0.0906 0.0984
N
P 0.00 0.20 0.0000 0.0079
Q 3.30 3.90 0.1299 0.1535
R
S 1.70 2.50 0.0669 0.0984
T 0.50 0.65 0.0197 0.0256
U
V
W
X
Y
Z
9.40 typ. 0.3701 typ.
16.15 typ. 0.6358 typ.
6.43 typ. 0.2532 typ.
4.60 typ. 0.1811 typ.
10.8 typ. 0.4252 typ.
1.35 typ. 0.0532 typ.
14.1 typ. 0.5551 typ.
8° ma x 8 ° max
dimensions
2.54 typ. 0.1 typ.
5.08 typ. 0.2 typ.
1.3 typ. 0.0512 typ.
TO-220-3-45 (P-TO220SMD)
2001-09-07
Page 8
SDP20S30
SDB20S30
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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