BAV100 ~ BAV103 HIGH SPEED SWITCHING DIODES
FEATURES :
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 50 V, 100 V, 150 V and 200 V respectively
• Repetitive peak reverse voltage:
max. 60 V, 120 V, 200 V and 250 V respectively
• Repetitive peak forward current: max. 625 mA.
• Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Maximum Ratings and Thermal Characteristics
(
Rating at
25
°
C ambient temperature unless otherwise specified
.)
Symbol Value Unit
BAV100
60
BAV101
120
BAV102
200
BAV103
250
BAV100
50
BAV101
100
BAV102
150
BAV103
200
Maximum Repetitive Peak Forward Current I
FRM
625 mA
Maximum Continuous Forward Current IFmA
at t = 100µs , Tj = 25°C3.0
at t = 1s , Tj = 25°C1.0
Maximum Power Dissipation PD400 mW
Maximum Junction Temperature TJ175 °C
Storage Temperature Range TS-65 to + 175 °C
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
V
R
= 50 V
-
-
100
V
R
= 100 V
-
-
100
V
R
= 150 V
-
-
100
V
R
= 200 V
-
-
100
I
F
= 100 mA
-
-
1.0
I
F
= 200 mA
-
-
1.25
Diode Capacitance Cd - - 5.0 pF
I
F
= 30 mA to I
R
= 30mA
R
L
= 100
Ω
; measured
at I
R
= 3mA
Page 1 of 2 Rev. 02 : March 25, 2005
ns50
f = 1MHz ; VR = 0
--Reverse Recovery Time Trr
IR
Forward Voltage VF
Parameter
Maximum Continuous Reverse Voltage VRV
Maximum Repetitive Peak Reverse Voltage VRRM V
Maximum Surge Forward Current
250
V
nA
IFSM A
Reverse Current
Test Condition
0.142(3.6)
0.134(3.4)
φ 0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
Cathode Mark
MiniMELF (SOD-80C)
0.098 (2.50)
Max.
Dimensions in inches and ( millimeters )
Mounting Pad Layout
0.049 (1.25)Min.
0.197 (5.00)
REF
0.079 (2.00)Min.
RATING AND CHARACTERISTIC CURVES ( BAV100 ~ BAV103 )
FIG. 1 MAXIMUM FORWARD CURRENT FIG. 2 TYPICAL FORWARD VOLTAGE
VERSUS AMBIENT TEMPERATURE
FIG. 3 TYPICAL DIODE CAPACITANCE AS FIG. 4 TYPICAL REVERSE CURRENT
A FUNCTION OF REVERSE VOLTAGE VERSUS JUNCTION TEMPERATURE
Page 2 of 2 Rev. 02 : March 25, 2005
00.4 1.2
Forward Voltage , VF (V)
0.01
10
1000
Forward Current , I
F
(mA)
0.1
1
100
0
0 100 200
Ambient Temperature , Ta (°C)
100
300
0.2 0.6 1.0 1.4
CONTINUOUS FORWARD
CURRENT, IF (mA)
200
400
0.8
TJ = 25°C
0 10 20
Reverse Voltage , VR (V)
0.8
1.5
Diode C apacitance , Cd
(pF)
1.0
1.2
1.4
f = 1MHz;
TJ = 25°C
100 2000
10-2
10-1
10
102
103
Reverse Current , I
R (µA)
Junction Temperature, Tj (°C)
1.3
1.1
0.9
VR = VRmax.
1
