High Voltage IGBT with Diode VCES IC25 VCE(sat) IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 40 A IC110 TC = 110C 20 A ICM TC = 25C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, TJ = 125C, RG = 10 Clamped inductive load ICM = 80 @0.8 VCES A PC TC = 25C 190 W Maximum Ratings -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 C Maximum tab temperature soldering SMD devices for 10s 260 C 6/4 g Weight TO-247AD/TO-268 G Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. IC = 1 A, VGE = 0 V VGE(th) IC = 250 A, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = 20A, VGE = 15 V Note 2 (c) 2003 IXYS All rights reserved 1200 E G = Gate E = Emitter TJ = 25C TJ = 125C TJ=125C 5.0 V 150 A A 100 nA 3.4 V V 50 2.9 2.8 C (TAB) C = Collector TAB = Collector Features z z International standard packages: JEDEC TO-247AD & TO-268 IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages V 2.5 TAB E G z BVCES C TO-268 (IXGT) z Test Conditions V A V ns TO-247AD (IXGH) z Symbol = 1200 = 40 = 3.4 = 160 z z Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost DS98985E(07/03) IXGH 20N120BD1 IXGT 20N120BD1 Symbol Test Conditions gfs IC = 20A; VCE = 10 V, Note 2. Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 20A, VGE = 15 V, VCE = 0.5 VCES Qgc 18 S 1700 pF 105 pF 39 pF 72 nC 12 nC 27 nC td(on) Inductive load, TJ = 25C 25 ns tri IC = 20 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Note 1. 15 ns td(off) tfi Eoff 150 280 160 2.1 320 n s 3.5 mJ ns td(on) Inductive load, TJ = 125C 25 ns tri IC = 20A; VGE = 15 V 18 ns Eon td(off) VCE = 0.8 VCES; RG = Roff = 10 Note 1 tfi Eoff RthJC RthCK (TO-247) Reverse Diode (FRED) 1.9 mJ 270 ns 360 3.5 ns mJ 0.25 0.65 K/W K/W Test Conditions VF IF = 10 A, VGE = 0 V 3.3 V IF TC = 90C 10 A IRM t rr IF = 10 A; -diF/dt = 400 A/s, VR = 600 V VGE = 0 V; TJ = 125C t rr IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V 14 120 A ns 40 ns 2.5 K/W RthJC 1. 2. 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-268 Outline Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Notes: TO-247 AD Outline Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. Pulse test, t 300 s, duty cycle d 2 % Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 20N120BD1 IXGT 20N120BD1 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C @ 25 deg. C 40 160 VG E = 15V 13V 11V I C - Amperes 30 9V I C - Amperes 35 25 7V 20 15 10 VG E = 15V 140 13V 120 11V 100 9V 80 60 7V 40 5V 5 20 0 5V 0 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 Fig. 3. Output Characteristics @ 125 Deg. C VCE (sat) - Normalized I C - Amperes 25 20 7V 15 10 5V 5 0 1.5 2 2.5 3 1.1 1 I C = 20A 0.9 3.5 4 4.5 I C = 10A 0.7 5 -50 27 70 24 60 21 G f s - Siemens I C - Amperes 0 25 50 75 100 125 150 70 80 Fig. 6. Transconductance 80 50 40 T J = -40C 25C 125C 10 -25 TJ - Degrees Centigrade Fig. 5. Input Admittance 20 18 1.2 V CE - Volts 30 16 I C = 40A 0.8 1 14 VG E = 15V 1.3 9V 0.5 12 1.4 VG E = 15V 13V 11V 30 10 Fig. 4. Temperature Dependence of V CE(sat) 40 35 8 V CE - Volts V CE - Volts T J = -40C 25C 125C 18 15 12 9 6 3 0 0 3 4 5 6 7 V GE - Volts (c) 2003 IXYS All rights reserved 8 9 10 0 10 20 30 40 50 I C - Amperes 60 IXGH 20N120BD1 IXGT 20N120BD1 Fig. 8. Dependence of Eoff on IC Fig. 7. Dependence of Eoff on RG 14 14 I C = 40A 10 T J = 125C VG E = 15V VC E = 960V 8 I C = 20A 6 4 2 T J = 125C VG E = 15V VC E = 960V 12 E off - milliJoules E off - milliJoules 12 10 R G= 56 Ohms 8 R G = 5 Ohms 6 4 I C = 10A 0 2 0 10 20 30 40 50 60 10 15 20 Fig. 9. Dependence of Eoff on Temperature 16 35 40 15 VC E = 600V I C = 20A I G = 10mA 12 10 I C = 40A VG E - Volts E off - milliJoules 12 30 Fig. 10. Gate Charge So lid lines - R G = 56 Ohms Dashed lines - R G = 5 Ohms VG E = 15V VC E = 960V 14 25 I C - Amperes R G - Ohms 8 I C = 20A 6 4 9 6 3 2 I C = 10A 0 0 0 25 50 75 100 125 0 150 10 20 30 40 50 60 70 80 TJ - Degrees Centigrade Q G - nanoCoulombs Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Resistance 1 90 80 IC - Amperes 60 R (th) J C - (C/W) TJ = 125 C R G = 10 Ohms dV/dT < 10V/ns 70 50 40 30 20 10 0 100 300 500 700 900 1100 1300 V CE - Volts 0.1 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 20N120BD1 IXGT 20N120BD1 70 A 60 5 C Qr IF 50 60 TVJ= 100C VR = 600V 50 4 IRM 40 TVJ=150C 40 TVJ=100C TVJ= 25C 30 3 IF= 60A IF= 30A IF= 15A 2 IF= 60A IF= 30A IF= 15A 30 20 20 1 10 0 TVJ= 100C VR = 600V A 0 1 2 3 V 10 0 100 4 VF Fig. 13. Forward current IF versus VF Fig. 14. Reverse recovery charge Qr versus -diF/dt 2.0 220 200 IRM 400 600 A/s 800 1000 -diF/dt TVJ= 100C IF = 30A V 0.8 VFR 40 0.5 0 40 0.4 140 Qr 0.0 80 120 C 160 120 0 200 TVJ 400 600 800 1000 A/s 0 0 200 400 -diF/dt Fig. 16. Dynamic parameters Qr, IRM versus TVJ Fig. 17. Recovery time trr versus -diF/dt 1 0.0 600 A/s 800 1000 diF/dt Fig. 18. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC 0.01 0.001 0.00001 s tfr IF= 60A IF= 30A IF= 15A 160 1.2 tfr 80 180 1.0 200 Fig. 15. Peak reverse current IRM versus -diF/dt VFR trr Kf 0 120 TVJ= 100C VR = 600V ns 1.5 0 A/s 1000 -diF/dt DSEP 30-12A/DSEC 60-12A 0.0001 0.001 0.01 Fig. 19. Transient thermal resistance junction to case (c) 2003 IXYS All rights reserved 0.1 t s 1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397