© 1987
SILICO N SWITCHING DIODE
1SS303
HIGH SPEED SWITCHING
SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE
DATA SHEET
Document No. D16308EJ2V0DS00 (2nd edition)
(Previous No. DC-2100)
Date Published July 2002 NS CP(K)
Printed in Ja
p
an
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
•Low capacitance: Ct = 2.5 pF TYP.
•High speed switching: trr = 4.0 ns MAX.
•Wide applications including switching, limitter, clipper.
•Double diode configuration assures economical use.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage VRM 75 V
DC Reverse Vo ltage VR50 V
Surge Current (1
µ
s) Note IFSM 6.0 A
Surge Current (1
µ
s) IFSM 4.0 A
Peak Forward Current Note IFM 450 mA
Peak Forward Current IFM 300 mA
Average Rectified Current Note IO150 mA
Average Rectified Current IO100 mA
Maximum Temperatures
Junction Temperature Tj150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Thermal Resistance
Junction to Ambient Note Rth(j-a) 1.0 °C/mW
Junction to Ambient Rth(j-a) 0.85 °C/mW
Note Both diodes loaded simultaneously.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTE RISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
VF1 IF = 10 mA 0.72 1.0 V
VF2 IF = 50 mA 0.88 1.1 V
Forward Voltage
VF3 IF = 100 mA 1.0 1.2 V
Reverse Current IRVR = 50 V 0.1
µ
A
Capacitance CtVR = 0 V, f = 1.0 MHz 2.5 4.0 pF
Reverse Recovery T i me trr See Test Circuit. 4.0 ns
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2.0±0.20.9±0.1
3
Marking
2
1
0.3
+0.1
−0
0.15
+0.1
−0.05
0.3
0.65
0 to 0.1
0.3 0.65
+0.1
−0
CONNECTION DIAGRAM (Top View)
2
1
3
1. Cathode
2. Cathode
3. Anode
Marking : A4
Data Sheet D16308EJ2V0DS
2
1SS303
TYPICAL ELECTRICAL CURVES (TA = 25°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
V
F
- Forward Voltage - V
0
0.1
0.2
0.5
1
2
5
10
20
50
100
0.2 0.4 0.6 0.8 1.0 1.2
I
F
- Forward Current - mA
TERMINAL CAPACITANCE vs.
REVERSE V OLTAGE
VR - Reverse Voltage - V
0.5 1 2 5 10 20 50 100
0.1
0.2
0.5
1
2
5
10
20
Ct - Terminal Capacitance - pF
REVERSE CURRENT vs.
REVERSE V OLTAGE
V
R
- Reverse Voltage - V
01020304050
0.2
0.5
1
2
5
10
20
50
100
I
R
- Reverse Current - µA
REVERSE RECOVERY TIME vs.
FORWARD CURRENT
I
F
- Forward Current - mA
0 20 40 60 80 100
4
8
12
16
20
t
rr
- Reverse Recovery Time - ns
Data Sheet D16308EJ2V0DS 3
1SS303
REVERSE RECOVERY TIME (trr) TEST CIRCUIT
Pulse
Generator
(50 Ω)
Sampling
Oscilloscope
(50 Ω)
DC
Source
Trigger
0.02 µF D.U.T.
3 kΩ
+
−I
F
= 10 mA, V
R
= 6.0 V, R
L
= 100 Ω
i
rr
= 0.1
•
I
r
Input V oltage
Waveform to Diode Output Current
Waveform in Diode
V
F
I
F
V
R
I
r
0
0
t
rr
0.1
•
I
r
1SS303
M8E 00. 4
The information in this document is current as of July, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
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