
Collector-Emitter voltage : VCE [V]
10
Capacitance : Cies, Coes, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
0 5 10 15 20 25 30 35
100
IGBT Module
Switching time vs. RG
Vcc=300V, Ic=10A, VGE=±15V, Tj=25°C
Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm]
0 200 400 600 800 1000 1200
Gate charge : Qg [nC]
100
1000
10
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
20
15
10
5
0 0 100 200 300 400 500 600 700
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
0 10 20 30 40 50
25
20
15
10
5
0
500
400
300
200
100
0
Switching time vs. RG
Vcc=300V, Ic=10A, VGE=±15V, Tj=125°C
Gate resistance : RG [ohm]
100
1000
10
Switching time : ton, tr, toff, tf [n sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 220 ohm
<<> Typical short circuit capability
Vcc=400V, RG=220 ohm, Tj=125°C
Short circuit time : tsc [µs]
1000
200
150
100
50
0 5 10 15 20 25
80
60
40
20
0
Short circuit time current : Isc [A]
Characteristics
1MBC10-060,1MBC10D-060,1MBG10D-060
1MBC10-060, 1MBC10D-060, 1MBG10D-060
0 200 400 600 800 1000 1200
Gate voltage : VGE [V]
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