Feb. 2009
1
CM200TL-12NF
APPLICATION
AC drive inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM200TL-12NF
HIGH POWER SWITCHING USE
¡IC ...................................................................200A
¡VCES ............................................................ 600V
¡Insulated Type
¡6-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
P
BU
N
CN-7
CN-8 CN-5
CN-6
UP-1
UP-2
V
CN-3
CN-4
VP-1
VP-2
W
CN-1
CN-2
WP-1
WP-2
NC
NC
NC
LABEL
U
BNP
VW
1
18
CN
11
WP VP UP
202016.5
18
110
±0.5
(6.05) (6.05)
11.7
262617.5
135
10.5
10.5
18.7
110
10.510.5
10.5 10.5
(13)
48.75
13.75
26.5
4
4-φ5.5
MOUNTING HOLES
78
±0.5
(6.05) (6.05)
2530.5 25 (13)
11
46.3
A
B
13
24.1
(SCREWING DEPTH)
6-M5 NUTS
+1
–0.5
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
CIRCUIT DIAGRAM
Feb. 2009
2
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 300V, IC = 200A, VGE = 15V
VCC = 300V, IC = 200A
VGE = ±15V
RG = 3.1Ω, Inductive load
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/6 module)*1
FWDi part (1/6 module)*1
Case to heat sink, Thermal compound Applied (1/6 module)
*2
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
600
±20
200
400
200
400
890
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
750
MITSUBISHI IGBT MODULES
CM200TL-12NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
°C
°C
Vrms
N • m
N • m
g
1
0.5
2.2
—
30
3.7
1.2
—
120
100
300
300
150
—
2.8
0.14
0.22
—
31
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
Ω
—
—
1.7
1.7
—
—
—
800
—
—
—
—
—
4.8
—
—
—
0.051
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
7V
V
68
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Symbol Parameter
VGE(th)
VCE(sat)
*1 : Case temperature (Tc) measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, TC = 88°C*1
Pulse (Note 2)
Pulse (Note 2)
TC = 25°C
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
—
—
Unit
Typ.
Limits
Min. Max.
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Test conditions
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM200TL-12NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
0
400
300
200
100
Tj = 25°C
11
12
10
98
VGE =
20V 15
0246810
0
10
1
10
2
2
3
5
7
10
3
2
3
5
7
0 100 200 300 400
VGE = 15V
Tj = 25°C
Tj = 125°C
10
8
6
4
2
02012 146810 16 18
Tj = 25°C
IC = 200A
IC = 400A
IC = 60A
12 435
Tj = 25°C
Tj = 125°C
10
–1
2
10
0
357 2
10
1
357 2
10
2
357
Cies
Coes
Cres
VGE = 0V 10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
1
10
2
57
10
3
23 5723
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive load
td(on)
td(off)
tf
tr
0
4
3
2
1
13
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200TL-12NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(ratio)
TIME (s)
RECOVERY LOSS vs. I
E
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
EMITTER CURRENT I
E
(A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
COLLECTOR CURRENT I
C
(A)
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 25°C
Inductive load
10
1
10
0
10
–1
2
3
5
7
2
3
5
7
10
1
10
2
57
10
3
23 5723
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
C snubber at bus
Err
10
1
10
0
10
–1
2
3
5
7
2
3
5
7
10
1
10
2
57
10
3
23 5723
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
10
2
10
1
10
0
Conditions:
V
CC
= 300V
V
GE
= ±15V
I
C
= 200A
T
j
= 125°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse,
T
C
= 25°C
Under the chip
IGBT part:
Per unit base =
R
th(j–c)
= 0.14K/W
FWDi part:
Per unit base =
Rth(j–c) = 0.22K/W
10
1
10
0
10
–1
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
Conditions:
V
CC
= 300V
V
GE
= ±15V
I
E
= 200A
T
j
= 125°C
Inductive load
C snubber at bus
Err
Feb. 2009
5
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
400 800 1000200 600 1200
0
20
15
10
5
0
0
V
CC
= 300V
V
CC
= 200V
I
C
= 200A
MITSUBISHI IGBT MODULES
CM200TL-12NF
HIGH POWER SWITCHING USE
