66100 MICROCOUPLER, STANDARD TRANSISTOR OUTPUT OPTOELECTRONIC PRODUCTS DIVISION 08/24/2011 Features: Applications: Radiation tolerant version available Small size saves real estate Large thick film gold bond pads Element evaluation on request Electrically similar to 4N2X and 4N4X couplers Eliminate ground loops Level shifting Line receiver Solid state switching Switching power supplies DESCRIPTION The 66100 microcoupler is a single channel optocoupler consisting of an LED optically coupled to a light sensitive silicon phototransistor. Each microcoupler is provided with full 100% DC testing with sample element evaluation available. All microcouplers are capable of operating over the full military temperature range (-55C to +125C). ABSOLUTE MAXIMUM RATINGS Input to Output Isolation Voltage ........................................................................................................................................... 1 kV Input Diode Continuous Forward Current ........................................................................................................................ 40 mA Peak Forward Input Current (value applies for tw 10s, PRR < 300 pps) ........................................................................... 1 A Reverse Input Voltage ............................................................................................................................................................ 6 V Input Power Dissipation (Note 1) ............................................................................................................. 80 mW Emitter-Base Voltage ............................................................................................................................................................... 7 V Collector-Emitter Voltage (Value applies to emitter-base open-circuited and the input diode equal to zero) .................... 60 V Collector-Base Voltage .......................................................................................................................................................... 60 V Continuous Collector Current ............................................................................................................................................. 50 mA Continuous Transistor Power Dissipation (Note 2) .....................................................................................300 mW Storage Temperature......................................................................................................................................... -65C to +150C Operating Free-Air Temperature Range ............................................................................................................-55C to +125C Notes: 1. Derate linearly at the rate of 1.33 mW/C above 65C. 2. Derate linearly at the rate of 3 mW/C above 25C. Package Dimensions Schematic Diagram 0.100 0.030 0.055 MAX. 0.050 6 5 4 CATHODE 6 5 BASE 3 COLLECTOR 0.092 0.110 ANODE 1 1 2 3 2 EMITTER 0.015 DEVICE TYPE IDENTIFIER DOT (COLOR CODE - BROWN) MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 66100 MICROCOUPLER, STANDARD TRANSISTOR OUTPUT 08/24/2011 ELECTRICAL CHARACTERISTICS TA = 25C unless otherwise specified. PARAMETER SYMBOL Input Diode Static Reverse Current MIN TYP IR Input Diode Static Forward Voltage -55C VF 1.0 Input Diode Static Forward Voltage +25C VF 0.8 Input Diode Static Forward Voltage +100C VF 0.8 1.4 MAX UNITS TEST CONDITIONS 10 A VR = 2 V 2.0 V IF = 10 mA 1.5 V IF = 10 mA 2.0 V IF = 10 mA MAX NOTE OUTPUT TRANSISTOR TA = 25C unless otherwise specified. SYMBOL MIN UNITS TEST CONDITIONS Collector-Base Breakdown Voltage PARAMETER V(BR)CBO 45 V IC = 100 A, IB = 0, IF = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1 mA, IB = 0, IF = 0 Emitter-Base Breakdown Voltage V(BR)EBO 7 V IC = 0 mA, IE = 100 A, IF = 0 Off-State Collector Current TYP ICEO +100C 100 nA 100 A MAX NOTE VCE = 20 V, IF = 0 mA, IB = 0 COUPLED CHARACTERISTICS TA = 25C unless otherwise specified. PARAMETER SYMBOL MIN UNITS TEST CONDITIONS IC(ON) 2.0 mA VCE = 5 V, IF = 1 mA, IB = 0 On State Collector Current TYP On State Collector Current +100C IC(ON) 2.0 mA VCE = 5 V, IF = 2 mA, IB = 0 On State Collector Current -55C IC(ON) 2.8 mA VCE = 5 V, IF = 2 mA, IB = 0 V IF = 2 mA, IC = 2 mA V II-O = 100 nA Collector-Emitter Saturation Voltage VCE(SAT) Input to Output Isolation Voltage VI-O 0.3 1000 Rise Time-Phototransistor Operation tr 10 25 s Fall Time-Phototransistor Operation tf 10 25 s VCC = 10 V, IF = 10 mA, RL = 100 , IB = 0 VCC = 10 V, IF = 10 mA, RL = 100 , IB = 0 NOTE 1 2 2 NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. 2. This parameter must be measured using pulse techniques (tW = 100 s duty cycle 1%). RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN Input Current, Low Level IFL 0 90 A Input Current, High Level IFH 2 10 mA Supply Voltage VCE 5 10 TA -55 125 Operating Temperature MAX UNITS V C SELECTION GUIDE PART NUMBER PART DESCRIPTION 66100-001 Commercial 66100-101 Commercial with element evaluation 66100-002 Radiation tolerant 66100-102 Radiation tolerant with element evaluation MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM