MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain. ............................. 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X B2 6 E2 9 B1X C1 62 C1 10.5 6 B1 E1 15 30 E2 480.25 E2 B2 B2X C2E1 C2E1 E1 B1 B1X 8 14 17 8 17 3 Tab#110, t=0.5 9.5 8 LABEL 37 17 1.8 30 3 21.5 16 3-M6 25 25 7 8 15.3 E2 Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage Parameter IC=1A, VEB=2V 1200 V VCEX Collector-emitter voltage VEB=2V 1200 V VCBO Collector-base voltage Emitter open 1200 V VEBO Emitter-base voltage Collector open IC Collector current -IC PC Conditions 7 V DC 100 A Collector reverse current DC (forward diode current) 100 A Collector dissipation TC=25C 800 W IB Base current DC 5 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1000 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M6 -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 1.96~2.94 N*m 20~30 kg*cm 1.96~2.94 N*m 20~30 kg*cm 470 g (Tj=25C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1200V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1200V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 400 mA VCE (sat) Collector-emitter saturation voltage -- -- 3.0 V VBE (sat) Base-emitter saturation voltage -- -- 3.5 V -VCEO Collector-emitter reverse voltage -IC=100A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=100A, VCE=5V 75 -- -- -- -- -- 3.0 s Switching time VCC=600V, IC=100A, IB1=-IB2=2A -- -- 15 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.155 C/ W Diode part (per 1/2 module) -- -- 0.65 C/ W Conductive grease applied (per 1/2 module) -- -- 0.075 C/ W IC=100A, IB=2A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN hFE 160 IB=2A IB=1A IB=0.5A 120 80 IB=0.1A IB=0.2A 40 0 Tj=25C 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 VCE=2.8V Tj=25C 10 0 7 5 3 2 10 -1 7 5 3 2 10 -2 1.8 2.2 2.6 3.0 BASE-EMITTER VOLTAGE 3.4 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 VCE(sat) 10 -1 10 1 3 2 1 Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) IC=100A IC=70A IB=2A Tj=25C Tj=125C COLLECTOR CURRENT IC (A) ton, ts, tf (s) 4 VBE(sat) 10 0 7 5 4 3 2 VBE (V) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) IC=50A VCE=2.8V 10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=5.0V 10 3 7 5 3 2 COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 3 2 10 4 7 5 3 2 VCE (V) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 200 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) 10 2 7 5 3 2 10 1 7 5 3 2 ts tf ton 10 0 10 7 5 3 2 VCC=600V IB1=-IB2=2A -1 Tj=25C Tj=125C 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE 10 2 7 5 4 3 2 10 0 VCC=600V IB1=2A IC=100A ts 10 1 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA tf Tj=25C Tj=125C 10 -1 2 3 4 5 7 10 0 320 Tj=125C COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) 280 240 200 160 IB2=-2A 120 80 40 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) 0 0.20 Zth (j-c) (C/ W) 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.25 0.15 0.10 0.05 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 VCE (V) 10 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR-EMITTER VOLTAGE 1600 SECOND BREAKDOWN AREA 90 DERATING FACTOR (%) s COLLECTOR CURRENT IC (A) s 200 1m 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 1200 DERATING FACTOR OF F. B. S. O. A. 100 50s 100s DC 10 2 7 5 3 2 800 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 400 TIME (s) TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 10 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 3 2 10 1 7 5 3 2 10 2 Irr 10 1 trr (s) 10 3 7 VCC=600V 5 IB1=-IB2=2A Tj=25C 3 Tj=125C 2 1000 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Qrr 10 0 trr 10 0 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 1.0 Zth (j-c) (C/ W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/