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MRF19085LR3 MRF19085LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,
IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — -51 dB
IM3 — -36.5 dBc
•Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
•Internally Matched for Ease of Use
•High Gain, High Efficiency and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD273
1.56
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case RθJC 0.79 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M3 (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF19085
Rev. 8, 5/2006
Freescale Semiconductor
Technical Data
MRF19085LR3
MRF19085LSR3
1930 -1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI- 780
MRF19085LR3
CASE 465A-06, STYLE 1
NI- 780S
MRF19085LSR3
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
V(BR)DSS 65 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th) 2 — 4 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 850 mAdc)
VGS(Q) 2.5 3.5 4.5 Vdc
Drain- Source On- Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on) — 0.18 0.210 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs — 6 — S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss — 3.6 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 -Carrier N -CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Gps 12 13 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η21 23 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz)
IMD — -36.5 -35 dBc
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz)
ACPR — -51 -48 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
IRL — -12 -9 dB
1. Part is internally matched both on input and output.
(continued)
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MRF19085LR3 MRF19085LSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture)
Two- Tone Common -Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
Gps — 13 — dB
Two- Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
η— 36 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
IMD — -31 — dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
IRL — -12 — dB
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 850 mA, f = 1990 MHz)
P1dB — 90 — W
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RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
Figure 1. 1930 - 1990 MHz 2-Carrier N- CDMA Test Circuit Schematic
RF
INPUT
RF
OUTPUT
Z1 Z2
VBIAS
C1 C6
L1
DUT
VSUPPLY
Z3
C8
Z8Z7
C5 C7
Z5 Z6
R3
C4
Z4
+
C9C3 C2
Z9
C10 C11 C12
+++
B1
R1
R2
Table 5. 1930 - 1990 MHz 2- Carrier N-CDMA Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Short Ferrite Bead 2743019447 Fair Rite
C1 51 pF Chip Capacitor 100B510JCA500X ATC
C2, C7 5.1 pF Chip Capacitors 100B5R1JCA500X ATC
C3, C9 1000 pF Chip Capacitors 100B102JCA500X ATC
C4, C10 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet
C5 0.1 µF Tantalum Surface Mount Capacitor T491C105M050 Kemet
C6 10 pF Chip Capacitor 100B100JCA500X ATC
C8 10 µF Tantalum Surface Mount Capacitor T495X106K035AS4394 Kemet
C11, C12 22 µF Tantalum Surface Mount Capacitors T491X226K035AS4394 Kemet
L1 1 Turn, 20 AWG, 0.100″ ID
N1, N2 Type N Flange Mounts 3052-1648-10 Omni Spectra
R1 1.0 kΩ, 1/8 W Chip Resistor
R2 220 kΩ, 1/8 W Chip Resistor
R3 10 Ω, 1/8 W Chip Resistor
Z1 Microstrip 0.750″ x 0.0840″
Z2 Microstrip 1.090″ x 0.0840″
Z3 Microstrip 0.400″ x 1.400″
Z4 Microstrip 0.520″ x 0.050″
Z5 Microstrip 0.540″ x 1.133″
Z6 Microstrip 0.400″ x 0.140″
Z7 Microstrip 0.555″ x 0.0840″
Z8 Microstrip 0.720″ x 0.0840″
Z9 Microstrip 0.560″ x 0.070″
Board 0.030″ Glass TeflonGX-0300-55-22, εr = 2.55 Keene
PCB Etched Circuit Boards MRF19085 Rev. 4 CMR
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MRF19085LR3 MRF19085LSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. 1930 - 1990 MHz 2-Carrier N- CDMA Test Circuit Component Layout
B1
C1
C5 C4 C3
C2
C7
C8
C9 C10
C11 C12
C6
R1
R2
R3
L1
CUT OUT AREA
Rev.4
MRF19085
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition
period. These changes will have no impact on form, fit or function of the current product.
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RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
TYPICAL CHARACTERISTICS
−55
−50
−45
−40
−35
−30
−25
−20
10 1004
Figure 3. 2-Carrier N-CDMA Spectrum
Figure 4. 2-Carrier N - CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 5. Intermodulation Distortion
Products versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation
Distortion versus Output Power and IDQ
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%), ηGps , POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS Avg.) N−CDMA
IM3 (dBc), ACPR (dBc)
f, FREQUENCY (MHz)
INPUT RETURN LOSS (dB) , DRAIN EFFICIENCY (%)η
Figure 7. 2-Carrier N-CDMA Broadband Performance Figure 8. CW Performance
0
5
10
15
20
25
30
−70
−63
−56
−49
−42
−35
−28
110
300.5
IM3
Gps
ACPR
η
VDD = 26 Vdc, IDQ = 850 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
−70
−60
−50
−40
−30
−20
0
10
20
30
40
50
10 100
3rd Order
η
4
5th Order
7th Order
INTERMODULATION DISTORTION (dBc)IMD,
Pout, OUTPUT POWER (WATTS) PEP
, DRAIN EFFICIENCY (%), ηGps , POWER GAIN (dB)
IM3 (dBc), ACPR (dBc), IRL,
1150 mA
850 mA
700 mA
IDQ = 550 mA
1000 mA
12
14
16
18
20
22
24
−60
−50
−40
−30
−20
−10
0
1930 1940 1950 1960 1970 1980 1990
VDD = 26 V
Pout = 18 W Avg.
IDQ = 850 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
IM3
Gps
ACPR
η
IRL
Pout, OUTPUT POWER (WATTS)
, INPUT POWER (WATTS), G ps, POWER GAIN (dB)Pin
0
2
4
6
8
10
12
14
5
12
19
26
33
40
47
54
10 1002 140
VDD = 26 V
IDQ = 850 mA
f = 1960 MHz
Gps
Pin
η
, DRAIN EFFICIENCY (%)η
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
VDD = 26 Vdc
IDQ = 850 mA
f1 = 1960 MHz
100 kHz Tone Spacing
f, FREQUENCY (MHz)
−100
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5 4.5
3
0−1.5
−3
−4.5
−6
−7.5 7.5
(dB)
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MRF19085LR3 MRF19085LSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
33
34
35
36
37
38
39
−32
−31
−30
−29
−28
−27
−26
24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0
VDD, DRAIN SUPPLY (V)
Figure 9. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
INTERMODULATION DISTORTION (dBc)IMD,
, DRAIN EFFICIENCY (%)η
η
IDQ = 850 mA
f = 1960 MHz
100 kHz Tone Spacing
IMD
Pout, OUTPUT POWER (WATTS)
Gps, POWER GAIN (dB)
11.5
12.0
12.5
13.0
13.5
14.0
10 1004
Figure 10. Two-Tone Power Gain versus Output
Power
Figure 11. Two-Tone Broadband Performance
10
15
20
25
30
35
40
−35
−30
−25
−20
−15
−10
−5
1920 1930 1940 1950 1960 1970 1980 1990 2000
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
IDQ = 1150 mA
1000 mA
850 mA
700 mA
550 mA
Gps, POWER GAIN (dB), , DRAIN EFFICIENCY (%)η
η
IMD
INTERMODULATION DISTORTION (dBc)IMD,
f, FREQUENCY (MHz)
INPUT RETURN LOSS (dB)IRL,
IRL
Gps
VDD = 26 Vdc
Pout = 90 W (PEP)
IDQ = 850 mA
100 kHz Tone Spacing
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RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
1930
1960
0.75 - j2.50
0.70 - j2.40
1.05 - j1.95
1.10 - j1.85
VDD = 26 V, IDQ = 850 mA, Pout = 18 W Avg.
1990 0.65 - j2.35 1.05 - j1.75
Zo = 5 Ω
f = 1930 MHz
f = 1990 MHz
f = 1930 MHz
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Zsource
Zload
f = 1990 MHz
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9
RF Device Data
Freescale Semiconductor
NOTES
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RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
NOTES
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MRF19085LR3 MRF19085LSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465- 06
ISSUE G
NI-780
MRF19085LR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
CASE 465A- 06
ISSUE H
NI-780S
MRF19085LSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.805 0.815 20.45 20.70
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
M0.774 0.786 19.61 20.02
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S0.365 0.375 9.27 9.52
N0.772 0.788 19.61 20.02
U− − − 0.040 − − − 1.02
Z− − − 0.030 − − − 0.76
M
A
M
bbb B M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
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RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
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Document Number: MRF19085
Rev. 8, 5/2006