SFH 4202
Leistungsstarke IR-Lumineszenzdiode
High Power Infrar ed Emitter
Lead (Pb) Free Product - RoHS Compliant
Vorläufige Daten / Preliminary Data
2005-02-25 1
Wesentliche Merkmale
• Leistungsstarke GaAs-LED (35 mW)
• Hoher Wirkunsgrad bei kleinen Strömen
• Hohe Fluss-Ströme bei hohen Temperturen
möglich
• Homogene Abstrahlung
• Typische Peakwellenlänge 950nm
Anwendungen
• Schnelle Datenübertragung mit
Übertragungsraten bis 100 Mbaud
(IR Tastatur, Joystick , Multimed ia)
• Analoge und digitale Hi-Fi Audio- und
Videosignalübertragung
• Alarm- und Sicherungssysteme
• IR Freiraumdatenübertragung
• IR-Scheinwerfer für Kameras
Typ
Type Bestellnummer
Ordering Code Strahlstärkegruppierung 1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping 1)
Ie (mW/sr)
1) gemessen bei einem Raum w ink el Ω = 0. 01 sr / measure d at a sol id ang le of Ω = 0.01 sr
SFH 4202 on request 10 (≥ 4)
Features
• High Power GaAs-LED (35 mW)
• High Efficiency at low currents
• High Forward current possible at high
temperatures
• Homogeneous Radiation Pattern
• Typical peak wavelength 950nm
Applications
• High data transmission rate up to 100 Mbaud
(IR keyboard, Joystick, Multimedia)
• Analog and digi tal Hi-Fi audi o an d vi deo s ignal
transmission
• Alarm and safety equipment
• IR free air data transmission
• IR spotlight for cameras
2005-02-25 2
SFH 4202
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage VR3 V
Durchlassstrom
Forward current IF (DC) 100 mA
Stoßstrom, tp = 10 µs, D = 0
Surge current IFSM 2.2 A
Verlustleistung
Power dissipation Ptot 180 mW
Wärmewiderstand Sperrschic ht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
300
130
K/W
K/W
SFH 4202
2005-02-25 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
∆λ 40 nm
Abstrahlwinkel
Half angle ϕ± 60 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area L × B
L × W0.3 × 0.3 mm
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Ω
tr, tf10 ns
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 (≤ 1.8)
3.2 (≤ 4.3)
V
V
Sperrstrom
Reverse current
VR = 3 V
IR0.01 (≤ 10) µA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe35 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe, IF = 100 mA
TCI– 0.44 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.2 nm/K
2005-02-25 4
SFH 4202
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min.
Ie typ.
4
10 mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ. 60 mW/sr
SFH 4202
2005-02-25 5
Relati ve Sp ectral Emi ssi o n
Irel = f (λ)
Forward Current IF = f (VF)
single pu ls e, tp = 20 µs
Radiation Characteristics Irel = f (ϕ
OHF00777
nm800
Ιerel
λ
0
850 900 950 1000 1100
20
40
60
80
100
OHF00784
10
-3
V
mA
0
Ι
F
V
F
0.5 1 1.5 2 2.5 3 3.5 4.5
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
Ie
Ie 100 mA = f (IF)
e
e (100 mA)
mA
OHF00809
F
Ι
Ι
Ι
10 40
10 10 110 23
10
10-3
10-2
10
10-1
0
102
OHF00040
10
-5
F
I
T
P
t
=
D
P
t
T
p
t
F
I
0.005
0.01
0.02
0.05
D
10
-4
10
-3
10
-2
10
-1
10
0
10
1 2
10s
0.1
0.2
0.5
1
=
-1
10
5
1
10
10
0
5
A
Max. Permissible Forward Current
IF = f (TA)
600
04020
F
I
10080 ˚C
T
OHL01293
mA
temp. ambient
T
A
20
40
60
80
100
120
A
2005-02-25 6
SFH 4202
Maßzeichnung
Package Outlines
Maße we rden wie folgt angegeben: m m (inc h) / Dim ensions are s pecified as follo ws: mm (inch)
Anode: se e m ark ing “A” in drawi ng
GPLY6084
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043) 3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Package marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
0.6 (0.024)
0.8 (0.031)
AA
CA AC
A A
SFH 4202
2005-02-25 7
Empfohlenes Lötpaddesign IR Flow Löten
Recommended Solder Pad IR Reflow Soldering
Empfohlenes Lötpaddesign Wellenlöten (TTW)
Recomended Solder Pad TTW Soldering
OHLPY440
Padgeometrie für
verbesserte Wärmeableitung
improved heat dissipation
Paddesign for
Lötstoplack
Solder resist
0.8 (0.031)
3.7 (0.146)
1.1 (0.043)
2.3 (0.091)
3.3 (0.130)
1.5 (0.059)
11.1 (0.437)
Cu Fläche / 16 mm per pad
2
Cu-area
_
<
3.3 (0.130)
Kathode/
Cathode
Anode
Fläche darf elektrisch nicht beschaltet werden.
Do not use this area for electrical contact.
0.7 (0.028)
Fläche darf elektrisch nicht beschaltet werden.
Do not use this area for electrical contact.
OHAY1583
6.1 (0.240)
2.8 (0.110)
2 (0.079)
3 (0.118)
6 (0.236)
2 (0.079)
1 (0.039)
2.8 (0.110) 0.5 (0.020)
Solder resist
Lötstoplack
PCB-direction
Bewegungsrichtung
der Platine
2 (0.079)
Padgeometrie für
improved heat dissipation
verbesserte Wärmeableitung
Paddesign for
2
Cu Fläche / > 16 mm per pad
Cu-area
Anode Fläche darf elektrisch nicht beschaltet werden.
Do not use this area for electrical contact.
Fläche darf elektrisch nicht beschaltet werden.
Do not use this area for electrical contact.
Cathode
Kathode/
2005-02-25 8
SFH 4202
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C +0 ˚C
-5 ˚C
245 ˚C ±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C -0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
min . c ondi t ion for IR Reflow Solderi n g:
solder point temperature ≥ 235 °C for at leas t 10 s ec .
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 4202
2005-02-25 9
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The inform at ion describes the type of co m ponent and sha ll not be c ons idered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous subs ta nc es . For in fo rm at ion on the type s in qu es t ion please cont ac t our Sales Orga niz at ion.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touc h with your nearest sale s office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail, it is reasonab le t o as sume that the health of the user m ay be endangered.
