OP269B - TT Electronics [Optek Technology]

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue B 01/2012

Page 1 of 6

Plastic Infrared Emitting Diode

OP168F, OP169, OP268F, OP269 Series

Description:

Each diode in this series is molded into an end-looking plastic package. The package for all OP168F and OP268F

devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices

are GaAs. OP268F and OP269 devices are GaAIAs.

The OP268FPS is an 850nm gallium aluminum arsenide infrared emitting diode molded in a end-looking miniature

plastic package. The advantage of this emitter is that it emits photons from a 0.004” area that is aligned with the

package optical centerline. Unlike other GaAlAs emitters, this device performs more like an ideal point source and

is suitable for use with lenses to create collimated light sources that can be used in a variety of applications.

Due to their small size, all diodes in this series offer considerable design flexibility.

The OP168F and OP268F series are mechanically an d spe ctrall y matched to the OP508F series phototransisto r

and the OP538F series photodarli ngtons. The OP169 and OP269 series are mechanically and spectrally

matched to the OP509 series phototransistors.

Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.

For custom screening contact your OPTEK representative.

Features:

• Flat lens for wide radiation angle (OP168, OP268)

• Integral lens for narrow beam angle (OP169, OP269)

• Easily stackable on 0.100” (2.54 mm) hole centers

• Mechanically and spectrally matched to other OPTEK devices

Applications:

• Space-limited applications

• Excellent design flexibility

• PCBoard mounted slotted switch

• PCBoard interrupter

Ordering Information

Part

Number LED Peak

Wavelength Total Beam

Angle Lead

Length

OP168FA

935 nm 104°

0.50"

OP168FB

OP168FC

OP169A

935 nm 18°

OP169B

OP169C

OP268FA

890 nm

OP268FB

OP268FC

OP268FPS 850 nm 50°

OP269A

890 nm 18”

OP269B

OP269C

104°

OP168

OP268 OP169

OP269

RoHS

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue B 01/2012

Page 2 of 6

Plastic Infrared Emitting Diode

OP168F, OP169, OP268F, OP269 Series

OP169 (A, B, C), OP269 (A, B, C)

OP168F (A, B, C), OP268F (A, B, C, PS)

Pin # LED

X=0.060” (1.5 mm)

1 Anode

2 Cathode

Pin # LED

X=0.060” (1.5 mm)

1 Anode

2 Cathode

INCHES

[MILLIMETERS]

DIMENSIONS ARE IN:

INCHES

[MILLIMETERS]

DIMENSIONS ARE IN:

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue B 01/2012

Page 3 of 6

Plastic Infrared Emitting Diode

OP168F, OP169, OP268F, OP269 Series

Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Storage and Operating Temperature Range -40o C to +100o C

Reverse Voltage 2.0 V

Continuous Forward Current 50 mA

Peak Forward Current (1 μs pulse width, 300 pps)

OP168, OP169, OP268, OP269 (A, B, C)

OP268FPS

3.0 A

100 mA

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron](1) 260° C

Power Dissipation(2) 100 mW

Notes:

1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force

may be applied to the leads when soldering.

2. Derate linearly 1.33 mW/° C above 25° C.

3. For OP168 (FA, FB, FC) and OP268 (FA, FB, FC), EE(APT) is a measurement of the average apertured radiant energy incident upon a

sensing area 0.081” (2.06 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.400” (10.16 mm)

from the measurement surface. For OP169 (A, B, C) and OP269 (A, B, C), EE(APT) is a measurement of the average apertured radiant

energy incident upon a sensing area 0.180” (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the lens

and 0.653” (16.6 mm) from the lens tip. NOTE: EE(APT) is a measurement of the average radiant intensity within the cone formed by

the above conditions. EE(APT) is not necessarily uniform within the measured area.

Electrical Characteristics (TA = 25°C unless otherwise noted)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode

EE (APT)

(3)

Apertured Radiant Incidence

OP168FA

OP168FB

OP168FC

OP169A

OP169B

OP169C

OP268FA

OP268FB

OP268FC

OP268FPS

OP269A

OP269B

OP269C

0.48

0.43

0.27

0.18

0.11

0.03

0.64

0.45

0.36

0.10

0.58

0.42

0.34

0.73

0.22

0.99

0.90

0.82

mW/cm2

IF = 20 mA

Aperture = .081” dia.

Distance = .400” from tip of lens to

aperture surface

Forward Voltage

OP168, OP169

OP268, OP269

OP268FPS

1.40

1.50

1.80

V IF = 20 mA

Reverse Current

OP168, OP169, OP268, OP269

OP268FPS

100

µA

VR= 2.0 V

λP

Wavelength at Peak Emission

OP168, OP169

OP268, OP269

OP268FPS

935

890

850

IF = 20 mA

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue B 01/2012

Page 4 of 6

Plastic Infrared Emitting Diode

OP168F, OP169, OP268F, OP269 Series

Electrical Characteristics (TA = 25°C unless otherwise noted — for reference only)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode

Spectral Bandwidth between Half Power

Points

OP168, OP169, OP268FPS

OP268, OP269

IF = 10 mA

∆λP /∆T

Spectral Shift with Temperature

OP168, OP169,

OP268, OP269

±0.30

±0.18

nm/°C

IF = Constant

θHP

Emission Angle at Half Power Points

OP168

OP169

OP268

OP268FPS

OP269

104°

46°

104°

50°

46°

Degree IF = 20 mA

Rise Time

OP168, OP169

OP268, OP269

OP268FPS

1000

500

IF(PK)=100 mA, PW=10 µs, D.C.=10%

Fall Time

OP168, OP169

OP268, OP269

OP268FPS

500

250

IF(PK)=100 mA, PW=10 µs, D.C.=10%

Beam Angle OP268FA - OP268FC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

-80 -60 -40 -20 0 20 40 60 80

Angle (Degrees)

Amplitude

Beam Angle OP168 & OP268 Pac kage Beam Angle OP169 & OP269 Pac kage

Beam An gl e

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

110%

-80-70-60-50-40-30-20-100 1020304050607080

Degrees

Normalized Radiance

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue B 01/2012

Page 5 of 6

Plastic Infrared Emitting Diode

OP168F, OP169, OP268F, OP269 Series

OP168 (FA, FB, FC), OP169 (A, B, C)

Distance vs Output Power vs Forward Current

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Distance (inches)

N or malize d Out p ut Po wer

10 mA

20 mA

30 mA

40 mA

50 mA

60 mA

80 mA

100 mA

Normal iz ed at 0.6" and 50 m A

Forward Current

Forward Voltage vs Forward Current vs

Temperature

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

0 5 10 15 20 25 30 35 40 45

Forward Cu rren t (m A)

Typical Forward V ol tage (V)

-65°C

-40°C

-20°C

+0°C

+20°C

+40°C

+60°C

+80°C

+100°C

+125°C

Opt ic a l P ower vs I

vs Temp

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 5 10 15 20 25 30 35 40 45 50

Forward Current I

(mA)

Normalized Optical Power

-65°C

-40°C

-20°C

+0°C

+20°C

+40°C

+60°C

+80°C

+100°C

+125°C

Norm a li z ed at 20 mA and 20

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue B 01/2012

Page 6 of 6

Plastic Infrared Emitting Diode

OP168F, OP169, OP268F, OP269 Series

OP268 (FA, FB, FC, FPS), OP269 (A, B, C)

Forward Voltage vs Forward Current vs

Temperature

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

0 102030405060708090100

Forwar d Current (mA)

Typical Forward Voltage (V)

-60° C

-40° C

-20° C

0° C

20° C

40° C

60° C

80° C

100° C

120°C

Optical Power vs I

vs Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 102030405060708090100

Forward Current I

(mA)

Normalized Optical Power

-60° C

-40° C

-20° C

0° C

20° C

40° C

60° C

80° C

100° C

120° C

Normal ized at 50 mA and 20° C

Distance vs Output Power vs Forward Current

0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''

Dist an ce (i n ch es )

Normalized Output Power

10 mA

20 mA

30 mA

40 mA

50 mA

60 mA

70 mA

80 mA

90 mA

100 mA

Normalized at 1" and 50 m

Forward Current