AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. Standard Product AO8810 is Pb-free (meets ROHS & Sony 259 specifications). AO8810L is a Green Product ordering option. AO8810 and AO8810L are electrically identical. VDS (V) = 20V ID = 7 A (VGS = 4.5V) RDS(ON) < 20m (VGS = 4.5V) RDS(ON) < 24m (VGS = 2.5V) RDS(ON) < 32m (VGS = 1.8V) ESD Rating: 2000V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S2 S1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 8 V 30 1.5 W 1 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A 5.7 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 7 TA=25C Power Dissipation A Maximum 20 RJA RJL Typ 64 89 53 Max 83 120 70 Units C/W C/W C/W AO8810 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) RDS(ON) gFS VSD IS Static Drain-Source On-Resistance Min ID=250A, VGS=0V VDS=16V, VGS=0V 20 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Typ 0.4 A 1 10 A 0.6 1 V 16.5 23 20 28 m 20 24 m 24 29 0.76 32 m 1 2.5 S V A VDS=0V, VGS=8V A 30 TJ=125C VGS=2.5V, ID=5.5A VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=7A VGS=5V, VDS=10V, RL=1.35, RGEN=3 IF=7A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/s Units 1 5 VDS=0V, VGS=4.5V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=7A Max V TJ=55C VGS=1.8V, ID=5A Forward Transconductance VDS=5V, ID=7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance tD(off) tf trr Qrr Conditions A 1160 187 146 1.5 pF pF pF 16 0.8 3.8 6.2 nC nC nC ns 12.7 51.7 16 ns ns ns 17.7 ns nC 6.7 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 8V VGS=5V VGS =2V 15 20 ID(A) ID(A) VGS =1.5V 10 10 125C 5 VGS =1V 25C 0 0 0 1 2 3 4 5 0.0 VDS(Volts) 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristi cs 50 Normalize ON-Resistance 1.6 40 RDS(ON)(m) 0.5 VGS =1.8V 30 VGS =2.5V 20 VGS =4.5V 10 0 5 10 15 ID=6.5A 1.4 VGS=1.8V VGS=2.5V VGS=4.5V 1.2 1.0 0.8 20 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=6.5A 1E+00 125C 1E-01 40 IS(A) RDS(ON)(m) 50 125C 30 1E-02 1E-03 20 1E-04 25C 25C 1E-05 10 0 2 4 6 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=10V ID=7A 1600 Capacitance (pF) VGS(Volts) 4 3 2 Ciss 1200 800 1 400 0 0 0 5 10 15 Crss 0 20 RDS(ON) limited 10s 15 20 1ms 0.1s TJ(Max)=150C TA=25C 30 100s Power (W) ID (Amps) 10 40 TJ(Max)=150C TA=25C 10.0 5 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Coss 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000