SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 NOVEMBER 1995 ✪
COMPLEMENTARY TYPES BSP43 - BSP33
BSP41 - BSP31
PARTMARKING DETAIL DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BSP41 BSP43 UNIT
Collector-Base Voltage VCBO 70 90 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Base Current IB100 mA
Power Dissipation at Tamb
=25°C PTOT 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base BSP43
Breakdown Voltage BSP41
V(BR)CBO 90
70
VIC=100µA
Collector-Emitter BSP43
Breakdown Voltage BSP41
V(BR)CEO 80
60
VI
C=10mA *
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IE=10µA
Collector Cut-Off Current ICBO 100
50
nA
µA
VCB
=60V
VCB
=60V, Tamb =125°C
Collector-Emitter
Saturation Voltage
VCE(sat) 0.25
0.5
V
V
IC =150mA, IB
=15mA
IC =500mA, IB
=50mA
Base-Emitter
Saturation Voltage
VBE(sat) 1.0
1.2
V
V
IC =150mA, IB =15mA
IC =500mA, IB
=50mA
Static Forward
Current Transfer Ratio
hFE 30
100
50
300
IC =100µA, VCE
=5V
IC =100mA, VCE =5V
IC =500mA, VCE =5V
Collector Capacitance Cc12 pF VCB
=10V, f=1MHz
Emitter Capacitance Ce90 pF VEB =0.5V, f=1MHz
Transition Frequency fT100 MHz IC=50mA, VCE=10V
f =35MHz
Turn-On Time Ton 250 ns VCC
=20V, IC
=100mA
IB1 =IB2 =5mA
Turn-Off Time Toff 1000 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT493 datasheet.
BSP41
BSP43
C
C
E
B
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