ATF-34143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Features
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product Speci cations
800 micron Gate Width
Low Cost Surface Mount Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging Option Available
Speci cations
1.9 GHz; 4V, 60 mA (Typ.)
0.5 dB Noise Figure
17.5 dB Associated Gain
20 dBm Output Power at 1 dB Gain Compression
31.5 dBm Output 3rd Order Intercept
Applications
Tower Mounted Ampli er and Low Noise Ampli er
for GSM/TDMA/CDMA Base Stations
LNA for Wireless LAN, WLL/RLL and MMDS
Applications
General Purpose Discrete PHEMT for other Ultra Low
Noise Applications
Surface Mount Package - SOT-343
Description
Avago’s ATF-34143 is a high dynamic range, low noise
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount
plastic package.
Based on its featured performance, ATF-34143 is ideal for
the  rst stage of base station LNA due to the excellent
combination of low noise  gure and high linearity[1]. The
device is also suitable for applications in Wireless LAN,
WLL/RLL, MMDS, and other systems requiring super low
noise  gure with good intercept in the 450 MHz to 10 GHz
frequency range.
Note:
1. From the same PHEMT FET family, the larger geometry ATF-33143
may also be considered either for the higher linearity performance
or easier circuit design for stability in the lower frequency bands
(800– 900 MHz).
Pin Connections and Package Marking
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Note: Top View. Package marking provides
orientation and identi cation.
“4P” = Device code
“x” = Date code character. A new character
is assigned for each month, year.
GATE
4Px
SOURCE
DRAIN SOURCE
2
ATF-34143 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
V
DS Drain - Source Voltage[2] V 5.5
V
GS Gate - Source Voltage[2] V -5
V
GD Gate Drain Voltage[2] V -5
I
D Drain Current[2] mA Idss[3]
P
diss Total Power Dissipation[4] mW 725
P
in max RF Input Power dBm 17
T
CH Channel Temperature °C 160
T
STG Storage Temperature °C -65 to 160
jc Thermal Resistance[5] °C/W 165
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. VGS = 0 volts.
4. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 40°C.
5. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
6. Under large signal conditions, VGS may
swing positive and the drain current may
exceed Idss. These conditions are acceptable
as long as the maximum Pdiss and Pin max
ratings are not exceeded.
Product Consistency Distribution Charts[7]
V
DS
(V)
Figure 1. Typical/Pulsed I-V Curves[6].
(V
GS
= -0.2 V per step)
I
DS
(mA)
02 4 68
250
200
150
100
50
0
+0.6 V
0 V
–0.6 V
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 4†V, 60 mA.
LSL=29.0, Nominal=31.8, USL=35.0
29 3130 33 3432 35
120
100
80
60
40
20
0
-3 Std +3 Std
Cpk = 1.37245
Std = 0.66
9 Wafers
Sample Size = 450
NF (dB)
Figure 3. NF @ 2 GHz, 4†V, 60 mA.
LSL=0.1, Nominal=0.47, USL=0.8
0 0.40.2 0.6 0.8
120
100
80
60
40
20
0
-3 Std +3 Std
Cpk = 2.69167
Std = 0.04
9 Wafers
Sample Size = 450
GAIN (dB)
Figure 4. Gain @ 2 GHz, 4†V, 60 mA.
LSL=16.0, Nominal=17.5, USL=19.0
16 1716.5 18 18.517.5 19
120
100
80
60
40
20
0
-3 Std +3 Std
Cpk = 2.99973
Std = 0.15
9 Wafers
Sample Size = 450
Notes:
7. Distribution data sample size is 450 samples taken from 9 di erent wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
8. Measurements made on production test board. This circuit represents a trade-o between an optimal noise match and a realizeable match based
on production test requirements. Circuit losses have been de-embedded from actual measurements.
3
ATF-34143 Electrical Speci cations
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameters and Test Conditions Units Min. Typ.[2] Max.
I
dss[1] Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 90 118 145
V
P[1] Pincho Voltage VDS = 1.5 V, IDS = 10% of Idss V -0.65 -0.5 -0.35
I
d Quiescent Bias Current VGS = -0.34 V, VDS = 4 V mA — 60 —
g
m[1] Transconductance VDS = 1.5 V, gm = Idss /VP mmho 180 230 —
I
GDO Gate to Drain Leakage Current VGD = 5 V μA 500
I
gss Gate Leakage Current VGD = VGS = -4 V μA — 30 300
NF Noise Figure f = 2 GHz VDS = 4 V, IDS = 60 mA dB 0.5 0.8
V
DS = 4 V, IDS = 30 mA 0.5
f = 900 MHz VDS = 4 V, IDS = 60 mA dB 0.4
G
a Associated Gain f = 2 GHz VDS = 4 V, IDS = 60 mA dB 16 17.5 19
V
DS = 4 V, IDS = 30 mA 17
f = 900 MHz VDS = 4 V, IDS = 60 mA dB 21.5
OIP3 Output 3rd Order f = 2 GHz VDS = 4 V, IDS = 60 mA dBm 29 31.5
Intercept Point[3] +5 dBm Pout /Tone VDS = 4 V, IDS = 30 mA 30
f = 900 MHz VDS = 4 V, IDS = 60 mA dBm 31
+5 dBm Pout /Tone
P
1dB 1 dB Compressed f = 2 GHz VDS = 4 V, IDS = 60 mA dBm 20
Intercept Point[3] V
DS = 4 V, IDS = 30 mA 19
f = 900 MHz VDS = 4 V, IDS = 60 mA dBm 18.5
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Using production test board.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-o
between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
Input 50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 56°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
4
ATF-34143 Typical Performance Curves
Notes:
1. Measurements made on a  xed toned production test board that was tuned for optimal gain match with reasonable noise  gure at 4V, 60 mA
bias. This circuit represents a trade-o between optimal noise match, maximum gain match, and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class
B as power output approaches P1dB. This results in higher PAE (power added e ciency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm
is approached.
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. IDS and VDS Tuned for NF @
4 V, 60 mA at 2 GHz.[1,2]
OIP3, P1dB (dBm)
04020 80 12010060 140
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P1dB
IDSQ (mA)
Figure 9. OIP3 and P1dB vs. IDS and VDS Tuned for NF @
4 V, 60 mA at 900 MHz. [1,2]
OIP3, P1dB (dBm)
04020 80 10060 120
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P1dB
CURRENT (mA)
Figure 8. Noise Figure vs. Current (Id) and Voltage
(VDS) at 2 GHz.[1,2]
NOISE FIGURE (dB)
04020 80 10060 120
1
0.8
0.6
0.4
0.2
0
3 V
4 V
CURRENT (mA)
Figure 11. Noise Figure vs. Current (Id) and Voltage
(VDS) at 900 MHz.[1,2]
NOISE FIGURE (dB)
04020 80 10060 120
3 V
4 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
CURRENT (mA)
Figure 7. Associated Gain vs. Current (Id) and Voltage
(VD) at 2 GHz.[1,2]
ASSOCIATED GAIN (dB)
04020 80 10060 120
3 V
4 V
20
15
10
5
0
CURRENT (mA)
Figure 10. Associated Gain vs. Current (Id) and Voltage
(VD) at 900 MHz.[1,2]
ASSOCIATED GAIN (dB)
04020 80 10060 120
3 V
4 V
25
20
15
10
5
0
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 4 V.
Fmin (dB)
04.02.0 6.0
60 mA
40 mA
20 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
FREQUENCY (GHz)
Figure 13. Associated Gain vs. Frequency and Current
at 4 V.
Ga (dB)
02.01.0 4.0 5.03.0 6.0
25
20
15
10
5
60 mA
40 mA
20 mA
5
ATF-34143 Typical Performance Curves, continued
Note:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class
B as power output approaches P1dB. This results in higher PAE (power added e ciency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm
is approached.
Figure 19. P
1dB
vs. IDS Active Bias Tuned for min NF @
4V, 60 mA at 900 MHz.
FREQUENCY (MHz)
Figure 15.
P1dB,
IP3 vs. Frequency
and Temperature at VDS
= 4 V, IDS = 60 mA.
[1]
P1dB, OIP3 (dBm)
0 2000 4000 6000 8000
33
31
29
27
25
23
21
19
17
85 C
25 C
-40 C
OIP3
P1dB
IDSQ (mA)
Figure 16. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and
3.9 GHz Tuned for Noise Figure
.
[1]
GAIN (dB), OP1dB, and OIP3 (dBm)
NOISE FIGURE
(
dB
)
04020 80 100 12060 140
Gain
OP1dB
OIP3
NF
35
30
25
20
15
10
5
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
IDSQ (mA)
Figure 17. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and
5.8 GHz Tuned for Noise Figure
.
[1]
GAIN (dB), OP1dB, and OIP3 (dBm)
NOISE FIGURE (dB)
04020 80 100 12060
Gain
OP1dB
OIP3
NF
30
27
24
21
18
15
12
9
6
3
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temperature
at VDS = 4 V, IDS = 60 mA.
Ga (dB)
0 2000 4000 6000 8000
25
20
15
10
NF (dB)
1.5
1.0
0.5
0
85 C
25 C
-40 C
IDS (mA)
Figure 18. P
1dB
vs. IDS Active Bias Tuned for NF @ 4V, 60
mA at 2 GHz.
P1dB (dBm)
0 10050 150
25
20
15
10
5
0
-5
3 V
4 V
IDS (mA)
P1dB (dBm)
0 10050 150
25
20
15
10
5
0
-5
3 V
4 V
6
ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 120 mA
Freq
(GHz)
P1dB
(dBm)
Id
(mA)
G1dB
(dB)
PAE1dB
(%)
P3dBm
(dBm)
Id
(mA)
PAE3dB
(%)
Gamma
Out_mag
(Mag)
Gamma
Out_ang
(Degrees)
0.9 20.9 114 25.7 27 22.8 108 44 0.34 136
1.5 21.7 115 21.9 32 23.1 95 53 0.31 152
1.8 21.3 111 20.5 30 23.0 105 47 0.30 164
2 22.0 106 19.5 37 23.7 115 50 0.28 171
4 22.7 110 12.7 40 23.6 111 47 0.26 -135
6 23.3 115 9.2 41 24.2 121 44 0.24 -66
ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 60 mA
Freq
(GHz)
P1dB
(dBm)
Id
(mA)
G1dB
(dB)
PAE1dB
(%)
P3dBm
(dBm)
Id
(mA)
PAE3dB
(%)
Gamma
Out_mag
(Mag)
Gamma
Out_ang
(Degrees)
0.9 18.2 75 27.5 22 20.5 78 36 0.48 102
1.5 18.7 58 24.5 32 20.8 59 51 0.45 117
1.8 18.8 57 23.0 33 21.1 71 45 0.42 126
2 18.8 59 22.2 32 21.9 81 47 0.40 131
4 20.2 66 13.9 38 22.0 77 48 0.25 -162
6 21.2 79 9.9 37 23.5 102 46 0.18 -77
Pin (dBm)
Figure 20. Swept Power Tuned for Power
at 2 GHz, VDS = 4 V, IDSQ = 120 mA.
Pout (dBm), G (dB),
PAE (%)
-30 -10-20 10020
80
50
40
30
20
10
0
-10
P
out
Gain
PAE
P
in
(dBm)
Figure 21. Swept Power Tuned for Power at 2 GHz,
V
DS
= 4 V, I
DSQ
= 60 mA.
P
out
(dBm), G (dB),
PAE (%)
-30 -10-20 10020
80
60
40
20
0
-20
P
out
Gain
PAE
Notes:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class
B as power output approaches P1dB. This results in higher PAE (power added e ciency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm
is approached.
2. PAE(%) = ((Pout – Pin)/Pdc) x 100
3. Gamma out is the re ection coe cient of the matching circuit presented to the output of the device.
7
ATF-34143 Typical Noise Parameters
VDS = 3 V, IDS = 20 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.90 13 0.16 21.8
0.9 0.11 0.85 27 0.14 18.3
1.0 0.11 0.84 31 0.13 17.8
1.5 0.14 0.77 48 0.11 16.4
1.8 0.17 0.74 57 0.10 16.0
2.0 0.19 0.71 66 0.09 15.6
2.5 0.23 0.65 83 0.07 14.8
3.0 0.29 0.59 102 0.06 14.0
4.0 0.42 0.51 138 0.03 12.6
5.0 0.54 0.45 174 0.03 11.4
6.0 0.67 0.42 -151 0.05 10.3
7.0 0.79 0.42 -118 0.10 9.4
8.0 0.92 0.45 -88 0.18 8.6
9.0 1.04 0.51 -63 0.30 8.0
10.0 1.16 0.61 -43 0.46 7.5
ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 20 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.5 0.96 -37 20.07 10.079 153 -29.12 0.035 68 0.40 -35 24.59
0.8 0.91 -60 19.68 9.642 137 -26.02 0.050 56 0.34 -56 22.85
1.0 0.87 -76 18.96 8.867 126 -24.29 0.061 48 0.32 -71 21.62
1.5 0.81 -104 17.43 7.443 106 -22.27 0.077 34 0.29 -98 19.85
1.8 0.78 -115 16.70 6.843 98 -21.62 0.083 28 0.28 -110 19.16
2.0 0.75 -126 16.00 6.306 90 -21.11 0.088 23 0.26 -120 18.55
2.5 0.72 -145 14.71 5.438 75 -20.45 0.095 15 0.25 -140 17.58
3.0 0.69 -162 13.56 4.762 62 -19.83 0.102 7 0.23 -156 16.69
4.0 0.65 166 11.61 3.806 38 -19.09 0.111 -8 0.22 174 15.35
5.0 0.64 139 10.01 3.165 16 -18.49 0.119 -21 0.22 146 14.25
6.0 0.65 114 8.65 2.706 -5 -18.06 0.125 -35 0.23 118 13.35
7.0 0.66 89 7.33 2.326 -27 -17.79 0.129 -49 0.25 91 10.91
8.0 0.69 67 6.09 2.017 -47 -17.52 0.133 -62 0.29 67 9.71
9.0 0.72 48 4.90 1.758 -66 -17.39 0.135 -75 0.34 46 8.79
10.0 0.75 30 3.91 1.568 -86 -17.08 0.140 -88 0.39 28 8.31
11.0 0.77 10 2.88 1.393 -105 -16.95 0.142 -103 0.43 10 7.56
12.0 0.80 -10 1.74 1.222 -126 -16.95 0.142 -118 0.47 -10 6.83
13.0 0.83 -29 0.38 1.045 -145 -17.39 0.135 -133 0.53 -28 6.18
14.0 0.85 -44 -0.96 0.895 -161 -17.86 0.128 -145 0.58 -42 5.62
15.0 0.86 -55 -2.06 0.789 -177 -18.13 0.124 -156 0.62 -57 5.04
16.0 0.85 -72 -3.09 0.701 166 -18.13 0.124 -168 0.65 -70 3.86
17.0 0.85 -88 -4.22 0.615 149 -18.06 0.125 177 0.68 -85 3.00
18.0 0.88 -101 -5.71 0.518 133 -18.94 0.113 165 0.71 -103 2.52
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S
21
|
2
vs. Frequency
at 3 V, 20 mA.
MSG/MAG and
S
21
(dB)
04
2814 1610 12618
25
20
15
10
5
0
-5
-10
MSG
MAG
S
21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the
gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes connect-
ing source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via
holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
8
ATF-34143 Typical Noise Parameters
VDS = 3 V, IDS = 40 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.87 13 0.16 23.0
0.9 0.13 0.82 28 0.13 19.6
1.0 0.14 0.80 32 0.13 19.2
1.5 0.17 0.73 50 0.1 17.7
1.8 0.21 0.70 61 0.09 17.1
2.0 0.23 0.66 68 0.08 16.7
2.5 0.29 0.60 87 0.06 15.8
3.0 0.35 0.54 106 0.05 14.9
4.0 0.47 0.46 144 0.03 13.4
5.0 0.6 0.41 -178 0.03 12.1
6.0 0.72 0.39 -142 0.06 10.9
7.0 0.85 0.41 -109 0.12 9.9
8.0 0.97 0.45 -80 0.21 9.1
9.0 1.09 0.52 -56 0.34 8.4
10.0 1.22 0.61 -39 0.50 8.0
ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.5 0.96 -40 21.32 11.645 151 -30.46 0.030 68 0.29 -43 25.89
0.8 0.89 -64 20.79 10.950 135 -27.33 0.043 56 0.24 -70 24.06
1.0 0.85 -81 19.96 9.956 124 -25.68 0.052 49 0.24 -88 22.82
1.5 0.79 -109 18.29 8.209 104 -23.61 0.066 36 0.23 -118 20.95
1.8 0.76 -121 17.50 7.495 96 -22.97 0.071 32 0.23 -130 20.24
2.0 0.74 -131 16.75 6.876 88 -22.38 0.076 27 0.22 -141 19.57
2.5 0.70 -150 15.39 5.880 74 -21.51 0.084 19 0.22 -160 18.45
3.0 0.67 -167 14.19 5.120 61 -20.92 0.090 12 0.22 -176 17.55
4.0 0.64 162 12.18 4.063 38 -19.83 0.102 -1 0.21 157 16.00
5.0 0.64 135 10.54 3.365 16 -19.02 0.112 -14 0.22 131 14.78
6.0 0.65 111 9.15 2.867 -5 -18.34 0.121 -28 0.24 105 12.91
7.0 0.66 87 7.80 2.454 -26 -17.86 0.128 -42 0.28 81 11.03
8.0 0.69 65 6.55 2.125 -46 -17.46 0.134 -55 0.32 60 9.93
9.0 0.73 46 5.33 1.848 -65 -17.20 0.138 -69 0.37 40 9.07
10.0 0.76 28 4.33 1.647 -84 -16.83 0.144 -84 0.41 23 8.59
11.0 0.78 9 3.30 1.462 -104 -16.65 0.147 -99 0.45 5 7.84
12.0 0.80 -11 2.15 1.281 -123 -16.65 0.147 -114 0.50 -14 7.15
13.0 0.83 -30 0.79 1.095 -142 -17.08 0.140 -130 0.55 -31 6.50
14.0 0.86 -44 -0.53 0.941 -158 -17.52 0.133 -142 0.60 -45 5.96
15.0 0.87 -56 -1.61 0.831 -174 -17.72 0.130 -154 0.64 -59 5.39
16.0 0.86 -72 -2.60 0.741 169 -17.72 0.130 -166 0.66 -73 4.21
17.0 0.86 -88 -3.72 0.652 153 -17.79 0.129 179 0.69 -88 3.43
18.0 0.88 -102 -5.15 0.553 137 -18.64 0.117 166 0.72 -105 2.95
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs. Frequency
at 3 V, 40 mA.
MSG/MAG and
S21 (dB)
04
2814 1610 12618
30
25
20
15
10
5
0
-5
-10
MSG
MAG
S
21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the
gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes connect-
ing source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via
holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
9
ATF-34143 Typical Noise Parameters
VDS = 4 V, IDS = 40 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.87 13 0.16 22.8
0.9 0.13 0.82 27 0.14 19.4
1.0 0.14 0.80 31 0.13 18.9
1.5 0.17 0.73 49 0.11 17.4
1.8 0.20 0.70 60 0.10 16.9
2.0 0.22 0.66 67 0.09 16.4
2.5 0.28 0.60 85 0.07 15.6
3.0 0.34 0.54 104 0.05 14.8
4.0 0.45 0.45 142 0.03 13.3
5.0 0.57 0.40 180 0.03 12.0
6.0 0.69 0.38 -144 0.05 10.9
7.0 0.81 0.39 -111 0.11 9.9
8.0 0.94 0.43 -82 0.20 9.1
9.0 1.06 0.51 -57 0.32 8.5
10.0 1.19 0.62 -40 0.47 8.1
ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 40 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.5 0.95 -40 21.56 11.973 151 0.03 0.030 68 0.33 -39 26.01
0.8 0.89 -65 21.02 11.252 135 0.04 0.042 56 0.27 -63 24.28
1.0 0.85 -82 20.19 10.217 123 0.05 0.051 48 0.26 -80 23.02
1.5 0.78 -109 18.49 8.405 104 0.06 0.064 36 0.24 -109 21.18
1.8 0.73 -131 16.93 7.024 87 0.07 0.074 27 0.22 -131 20.46
2.0 0.70 -150 15.57 6.002 73 0.08 0.081 19 0.21 -150 19.77
2.5 0.67 -167 14.36 5.223 61 0.09 0.087 12 0.20 -167 18.70
3.0 0.64 162 12.34 4.141 37 0.10 0.098 -1 0.19 165 17.75
4.0 0.63 135 10.70 3.428 16 0.11 0.108 -13 0.20 138 16.26
5.0 0.64 111 9.32 2.923 -6 0.12 0.117 -27 0.21 111 15.02
6.0 0.66 87 7.98 2.506 -26 0.12 0.124 -41 0.24 86 12.93
7.0 0.69 65 6.74 2.173 -46 0.13 0.130 -54 0.29 63 11.14
8.0 0.72 47 5.55 1.894 -65 0.13 0.134 -68 0.34 42 10.09
9.0 0.76 28 4.55 1.689 -85 0.14 0.141 -82 0.38 26 9.24
10.0 0.78 9 3.53 1.501 -104 0.15 0.145 -97 0.42 8 8.79
11.0 0.80 -11 2.39 1.317 -124 0.15 0.145 -113 0.47 -11 8.09
12.0 0.84 -29 1.02 1.125 -143 0.14 0.140 -128 0.53 -29 7.35
13.0 0.86 -44 -0.30 0.966 -160 0.13 0.133 -141 0.58 -43 6.76
14.0 0.87 -56 -1.38 0.853 -176 0.13 0.130 -152 0.62 -58 6.19
15.0 0.86 -72 -2.40 0.759 167 0.13 0.131 -165 0.65 -71 5.62
16.0 0.86 -88 -3.53 0.666 151 0.13 0.130 -180 0.68 -86 4.43
17.0 0.89 -102 -4.99 0.563 134 0.12 0.119 168 0.71 -103 3.60
18.0 0.89 -101.85 -4.99 0.563 134 0.12 0.119 168 0.71 -103 3.15
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S21|2 vs. Frequency
at 4 V, 40 mA.
MSG/MAG and
S21 (dB)
04
2814 1610 12618
30
25
20
15
10
5
0
-5
MSG
MAG
S
21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the
gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes connect-
ing source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via
holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
10
ATF-34143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.11 0.84 15 0.14 24.5
0.9 0.14 0.78 30 0.12 20.7
1.0 0.15 0.77 34 0.12 20.2
1.5 0.20 0.69 53 0.10 18.5
1.8 0.23 0.66 62 0.10 17.7
2.0 0.26 0.62 72 0.09 17.2
2.5 0.33 0.55 91 0.07 16.3
3.0 0.39 0.50 111 0.05 15.4
4.0 0.53 0.43 149 0.03 13.7
5.0 0.67 0.39 -173 0.04 12.3
6.0 0.81 0.39 -137 0.07 11.1
7.0 0.96 0.42 -104 0.14 10.0
8.0 1.10 0.47 -76 0.26 9.2
9.0 1.25 0.54 -53 0.41 8.6
10.0 1.39 0.62 -37 0.60 8.2
ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.5 0.95 -41 21.91 12.454 150 -31.06 0.028 68 0.29 -41 26.48
0.8 0.89 -65 21.33 11.654 134 -28.18 0.039 57 0.24 -67 24.75
1.0 0.85 -83 20.46 10.549 123 -26.56 0.047 49 0.23 -84 23.51
1.5 0.78 -111 18.74 8.646 103 -24.44 0.060 38 0.21 -114 21.59
1.8 0.75 -122 17.92 7.873 95 -23.74 0.065 33 0.21 -125 20.83
2.0 0.73 -133 17.16 7.207 87 -23.22 0.069 29 0.20 -136 20.19
2.5 0.69 -151 15.78 6.149 73 -22.38 0.076 22 0.19 -155 19.08
3.0 0.67 -168 14.56 5.345 60 -21.62 0.083 15 0.19 -171 18.09
4.0 0.64 161 12.53 4.232 37 -20.54 0.094 3 0.18 162 16.53
5.0 0.63 134 10.88 3.501 16 -19.58 0.105 -10 0.19 135 15.23
6.0 0.64 111 9.49 2.983 -5 -18.79 0.115 -24 0.21 109 12.89
7.0 0.66 86 8.15 2.557 -26 -18.27 0.122 -38 0.24 84 11.22
8.0 0.69 65 6.92 2.217 -46 -17.79 0.129 -51 0.28 62 10.21
9.0 0.73 46 5.72 1.932 -65 -17.46 0.134 -65 0.33 42 9.36
10.0 0.76 28 4.73 1.723 -84 -16.95 0.142 -79 0.38 25 8.94
11.0 0.78 9 3.70 1.531 -104 -16.71 0.146 -94 0.42 7 8.23
12.0 0.81 -11 2.57 1.344 -124 -16.71 0.146 -111 0.47 -12 7.56
13.0 0.84 -30 1.20 1.148 -143 -17.02 0.141 -126 0.52 -29 6.94
14.0 0.86 -44 -0.12 0.986 -159 -17.46 0.134 -139 0.58 -43 6.37
15.0 0.87 -56 -1.21 0.870 -175 -17.59 0.132 -150 0.62 -58 5.78
16.0 0.86 -72 -2.21 0.775 168 -17.59 0.132 -163 0.65 -71 4.60
17.0 0.86 -88 -3.35 0.680 151 -17.65 0.131 -178 0.68 -86 3.79
18.0 0.89 -101.99 -4.81 0.575 135 -18.42 0.120 169 0.71 -104 3.33
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs. Frequency
at 4 V, 60 mA.
MSG/MAG and
S21 (dB)
04
2814 1610 12618
30
25
20
15
10
5
0
-5
-10
MSG
MAG
S
21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the
gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes connect-
ing source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via
holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
11
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on measure-
ments while the Fmins below 2 GHz have been extrapo-
lated. The Fmin values are based on a set of 16 noise  gure
measurements made at 16 di erent impedances using an
ATN NP5 test system. From these measurements, a true
Fmin is calculated. Fmin represents the true minimum noise
gure of the device when the device is presented with an
impedance matching network that transforms the source
impedance, typically 50Ω, to an impedance represented
by the re ection coe cient o. The designer must design
a matching network that will present o to the device with
minimal associated circuit losses. The noise  gure of the
completed ampli er is equal to the noise  gure of the
device plus the losses of the matching network preceding
the device. The noise  gure of the device is equal to Fmin
only when the device is presented with o. If the re ection
coe cient of the matching network is other than o, then
the noise  gure of the device will be greater than Fmin
based on the following equation.
NF = Fmin + 4 Rn |s – o | 2
Zo (|1 + o|2)(1 –s|2)
Where Rn/Zo is the normalized noise resistance, o is the
optimum re ection coe cient required to produce Fmin
and s is the re ection coe cient of the source imped-
ance actually presented to the device. The losses of the
matching networks are non-zero and they will also add
to the noise  gure of the device creating a higher ampli-
er noise  gure. The losses of the matching networks
are related to the Q of the components and associated
printed circuit board loss. o is typically fairly low at higher
frequencies and increases as frequency is lowered. Larger
gate width devices will typically have a lower o as com-
pared to narrower gate width devices.
Typically for FETs, the higher o usually infers that an im-
pedance much higher than 50Ω is required for the device
to produce Fmin. At VHF frequencies and even lower L
Band frequencies, the required impedance can be in the
vicinity of several thousand ohms. Matching to such a
high impedance requires very hi-Q components in order
to minimize circuit losses. As an example at 900 MHz,
when airwwound coils (Q >100) are used for matching
networks, the loss can still be up to 0.25 dB which will add
directly to the noise  gure of the device. Using muiltilayer
molded inductors with Qs in the 30 to 50 range results
in additional loss over the airwound coil. Losses as high
as 0.5 dB or greater add to the typical 0.15 dB Fmin of the
device creating an ampli er noise  gure of nearly 0.65 dB.
A discussion concerning calculated and measured circuit
losses and their e ect on ampli er noise  gure is covered
in Avago Application 1085.
12
L=Lc L=Lb
R=Rb
L=Lb
R=Rb
L
CC=Ca
C
C=Cb
LOSSYL
L=Lb
R=Rb L=La*.5
L=Ld
L
L
LOSSYL
GATE_IN SOURCE
DRAIN_OUT
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=La L=Lb
R=Rb
LLOSSYL
L=Lb
R=Rb
LOSSYL
G
S
D
SOURCE
ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model
Optimized for 0.1–6.0 GHz
This model can be used as a design tool. It has been tested
on MDS for various speci cations. However, for more
precise and accurate design, please refer to the measured
data in this data sheet. For future improvements Avago
reserves the right to change these models without prior
notice.
NFETMESFET
G
MODEL=FET
W=800 μm
XX
D
XX
S
S
XX
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
IDS model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Gate model
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
Parasitics
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Breakdown
FNC=01e+6
R=.17
P=.65
C=.2
Noise
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01*W/200
EQUATION Beta=0.06*W/200
EQUATION Rd=200/W
EQUATION Rs=.5*200/W
EQUATION Cgs=0.2*W/200
EQUATION Cgd=0.04*W/200
EQUATION Lg=0.03*200/W
EQUATION Ld=0.03*200/W
EQUATION Ls=0.01*200/W
EQUATION Rc=500*200/W
* STATZ MESFET MODEL *
MODEL = FET
ATF-34143 Die Model
13
Package Dimensions
SC-70 4L/SOT-343
Part Number Ordering Information
No. of
Part Number Devices Container
ATF-34143-TR1G 3000 7” Reel
ATF-34143-TR2G 10000 13” Reel
ATF-34143-BLKG 100 antistatic bag
HE
D
A2
A1
b
b1
E
1.30 (.051)
BSC
1.15 (.045) BSC
C
L
A
DIMENSIONS (mm)
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold ash & metal burr.
4. All specications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror nish.
Recommended PCB Pad Layout for
Avago’s SC70 4L/SOT-343 Products
1.30
(0.051)
0.60
(0.024)
0.9
(0.035)
Dimensions in mm
(inches)
1.15
(0.045)
2.00
(0.079)
1.00
(0.039)
Tape Dimensions for Outline 4T
P
P
0
P
2
F
W
C
D
1
D
E
A
0
10° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
10° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t
1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
T
t
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
COVER TAPE
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3746EN
AV02-1283EN - June 8, 2012
Device Orientation
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
4PX 4PX 4PX 4PX